© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 4
1Publication Order Number:
MUR8100E/D
MUR8100E, MUR880E
MUR8100E is a Preferred Device
SWITCHMODEt
Power Rectifiers
Ultrafast “E’’ Series with High Reverse
Energy Capability
The MUR8100 and MUR880E diodes are designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
•20 mJ Avalanche Energy Guaranteed
•Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
•Ultrafast 75 Nanosecond Recovery Time
•175°C Operating Junction Temperature
•Popular TO−220 Package
•Epoxy Meets UL 94 V−0 @ 0.125 in.
•Low Forward Voltage
•Low Leakage Current
•High Temperature Glass Passivated Junction
•Reverse Voltage to 1000 V
•Pb−Free Packages are Available*
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MUR8100E TO−220 50 Units / Rail
ULTRAFAST RECTIFIERS
8.0 A, 800 V − 1000 V
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
1
3
4
MUR8100EG TO−220
(Pb−Free)
50 Units / Rail
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MUR880E TO−220
50 Units / RailMUR880EG TO−220
(Pb−Free)
TO−220AC
CASE 221B
4
3
1
MARKING DIAGRAM
AY WWG
U8xxxE
KA
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
U8xxxE = Device Code
xxx = 100 or 80
KA = Diode Polarity
MUR8100E, MUR880E
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MUR880E
MUR8100E
VRRM
VRWM
VR800
1000
V
Average Rectified Forward Current
(Rated VR, TC = 150°C) Total Device
IF(AV) 8.0 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 150°C)
IFM 16 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 100 A
Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
vF1.5
1.8
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 100°C)
(Rated DC Voltage, TC = 25°C)
iR500
25
mA
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
trr 100
75
ns
Controlled Avalanche Energy
(See Test Circuit in Figure 6)
WAVAL 20 mJ
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
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3
* The curves shown are typical for the highest voltage device in the voltage
* grouping. Typical reverse current for lower voltage selections can be
* estimated from these same curves if VR is sufficiently below rated VR.
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient Figure 5. Power Dissipation
1.80.4
vF
, INSTANTANEOUS VOLTAGE (VOLTS)
100
50
5.0
10
3.0
VR, REVERSE VOLTAGE (VOLTS)
0
10
0.1
0.01
TC, CASE TEMPERATURE (°C)
150140
10
3.0
2.0
1.0
0
20 600
TA, AMBIENT TEMPERATURE (°C)
8.0
6.0
4.0
2.0
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1.00
14
10
8.0
2.0
0
4.040
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
II
0.7
0.5
1.20.8 1.0 1.4 1.6
200 400 600 800 1000
1.0
100
10,000
170 180
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
80 120100
10
2.0 3.0 5.0
6.0
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
2.0
20
0.1
0.3
7.0
1.0
30
, REVERSE CURRENT ( A)
R
160
140 160 200180
m, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
6.0
5.0
4.0
9.0
8.0
7.0
6.0 9.07.0 8.0 10
7.0
5.0
3.0
1.0
9.0 TJ = 175°C
SQUARE WAVE
dc
RATED VR APPLIED
SQUARE WAVE
dc
TJ = 25°C
100°C
150°C
TJ = 175°C
25°C
100°C
70
0.2
1000
4.0
12
RqJA = 16°C/W
RqJA = 60°C/W
(No Heat Sink)
SQUARE WAVE
dc
SQUARE WAVE
dc
0.6
175°C
MUR8100E, MUR880E
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4
t0t1t2t
VDD
ID
IL
BVDUT
MERCURY
SWITCH
Figure 6. Test Circuit Figure 7. Current−Voltage Waveforms
+VDD
DUT
40 mH COIL
VD
IL
S1
ID
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
MUR8100E in this test circuit conducting a peak current of
one ampere at a breakdown voltage of 1300 V, and using
Equation (2) the energy absorbed by the MUR8100E is
approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
W
AVAL [1
2LI 2
LPK ǒBVDUT
BVDUTVDDǓ
W
AVAL [1
2LI 2
LPK
Figure 8. Current−Voltage Waveforms
CHANNEL 2:
IL
0.5 AMPS/DIV.
CHANNEL 1:
VDUT
500 VOLTS/DIV.
TIME BASE:
20 ms/DIV.
EQUATION (1):
EQUATION (2):
CH1 CH2 REF REF
CH1
CH2
ACQUISITIONS
SAVEREF SOURCE
1 217:33 HRS
STACK
A20ms953 V VERT500V
50mV
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5
t, TIME (ms)
1001.0
0.5
0.07
0.05
0.01
VR, REVERSE VOLTAGE (VOLTS)
101.0
1000
300
100
30
10
C, CAPACITANCE (pF)
2.0 5.0 10 20 50
0.3
0.7
1.0
100
r(t), TRANSIENT THERMAL RESISTANCE
0.2
0.1
0.03
0.02
0.01 0.02 0.05 0.1 0.2 0.5 200 500 1000
TJ = 25°C
(NORMALIZED)
Figure 9. Thermal Response
Figure 10. Typical Capacitance
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
ZqJC(t) = r(t) RqJC
RqJC = 1.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
MUR8100E, MUR880E
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6
PACKAGE DIMENSIONS
TO−220 TWO−LEAD
CASE 221B−04
ISSUE E
B
R
J
D
G
L
H
QT
U
A
K
C
S
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.035 0.64 0.89
F0.142 0.161 3.61 4.09
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MUR8100E/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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