Selection Guide
Semiconductor Group 1 1998-11-01
RF-Transistors and MMICs
MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Dual-Gate GaAs FETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
AIGaAs/GaAs HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
GaAs Power FETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
GaAs Broadband Amplifiers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Low-Noise Preamplifiers for Mobile Communications (PCN, DECT, GSM) . . . . . . . . . . . . . 4
Integrated Power Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Integrated Multi Mode and Dual Band Power Amplifiers for Mobile Communications. . . . . . 5
Variable Gain Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Mixer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF-SPDT Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
SIEGET25-RF-BIPOLAR-Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
SIEGET45-RF-BIPOLAR-Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
RF-Dual Transistor Arrays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Si MMICs Broadband Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Si MMICs in SIEGET 25-Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Active Bias Controller. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Bipolar-Transistor Characteristic Curves. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AF-Transistors
General Purpose Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Double Transistor Arrays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Double Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Low-Noise Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Digital Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Double Digital Transistors Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Switching Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
High-Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
RF-Diodes
Varactor (Tuning) Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Varactor (Tuning) Diodes Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
PIN Diode s (General Purpose, Switch ing) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Electros tatic-Discharge-Prot ection Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
AF-Schottky Diodes/RF-Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Schottky Detector Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Schottky-Diodes Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
AF-Diodes
General Purpose, Swit ching and Rectifier Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Diode Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
AF-Low-Leakage Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 4
Bridge Rect ifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Leaded Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Selection Guide
Semiconductor Group 2 1998-11-01
RF-Transistors and MMICs
MOS Field-Effect Transistors
Type Maximu m Ratings Charac teristics (TA = 25 °C) Package
VDS
VID
mA Ptot
mW Gps
dB F
dB VDS
VID
mA f
MHz gfs
mS
Tetrode
BF 998 12 30 200 20 1.00 8 10 800 24 SOT-143
BF 998W 12 30 200 20 1.00 810 800 24 SOT-343
BF 1005 8 25 200 18 1.40 5 10 800 24 SOT-143
BF 1005S 825 200 19 1.60 512 800 30 SOT-143
BF 1009 12 25 200 20 1.00 9 13 800 24 SOT-143
BF 1009S 12 25 200 22 1.40 912 800 30 SOT-143
BF 1012 16 25 200 20 1.00 12 10 800 24 SOT-143
BF 1012S 16 25 200 22 1.40 12 12 800 30 SOT-143
▼BF 2000 12 30 200 22 1.1 5 10 800 24 SOT-143
▼BF 2000W 12 30 200 22 1.1 510 800 24 SOT-343
▼BF 2030 14 40 200 2.0 5 10 800 31 SOT-143
▼BF 2030W 14 40 200 2.0 510 800 31 SOT-343
▼BF 2040 14 40 200 2.0 5 15 800 45 SOT-143
▼
▼ New type
BF 2040W 14 40 200 2.0 515 800 45 SOT-343
Triode
BF 543 20 30 200 22 1.00 10 4200 12 SOT-23
BF 999 20 30 200 25 1.00 10 10 200 16 SOT-23
Dual-Gate GaAs FETs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz F
dB Gps
dB
CF 739 Dual-Gat e GaAs FET 10 2.5 - 6 1.8 1.8 17 SOT-143
CF 750 Biased Dual Gate GaAs FET
for frequencies from 400 MHz
to 3 GHz
23.81.81.910SOT-143
Selection Guide
Semiconductor Group 3 1998-11-01
GaAs FETs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz gm
mS F
dB Ga
dB
CFY 30 Low Noise, High Gain GaAs
FET 15 3.5 430 1.4 11.5 SOT-143
CFY 35- 20 Low Noise, High Gain GaAs
FET 10 2.5 12 30 1.9 8.5 MW-4
CFY 35- 23 Low Noise, High Gain GaAs
FET 10 2.5 12 30 2.2 8.5 MW-4
AIGaAs/GaAs HEMTs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz gm
mS F
dB Ga
dB
CFY 77- 08 Low Noise, High Gain HEMT
for front end amplifiers up to
20 GHz
15 212 65 0.7 10.5 MW-4
CFY 77- 10 Low Noise, High Gain HEMT
for front end amplifiers up to
20 GHz
15 2 12 65 0.9 10 MW-4
GaAs Power FETs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz Gp
dB P-1dB
dBm
CLY 2 Power Ampl. for frequencies
up to 3 GHz 180 31.8 14.5 23.5 MW-6
CLY 5 Power Ampl. for frequencies
up to 2.5 GHz 350 3 1.8 9.5 26.5 SOT-223
CLY 10 Power Ampl. for frequencies
up to 2.5 GHz 700 31.8 828.5 SOT-223
CLY 15*
* Pulsed operation
Power Ampl. for frequencies
up to 2.5 GHz 1400 3 1.8 6 31.5 SOT-223
Selection Guide
Semiconductor Group 4 1998-11-01
GaAs Broadband Amplifiers
Type Descrip t ion Characteristics (TA = 25 °C)
VDS = 4.5 V Package
ID
mA f
MHz G
dB ∆G
dB F
dB P– 1 dB
dBm
CGY 50 Sing le stage MMIC ampli fier
100 MHz to 3 GHz 60 200 … 1000
800 … 1800 10.0
8.5 0.4
1.1 3.0
3.0 16
16 SOT-143
CGY 52 Two stage MM I C am plif ier 160 200 … 1800 15.0 3.0 4.8 19 MW-7
CGY 62 Two stage MM I C am plif ier 130 200 … 1800
2500 19.0
15.0 2.0
–3.5
–17.5
–MW-6
Low Noise Preamplifiers for Mobile Communications
Type Description Characteristics (TA = 25 °C)
VDS = 3 V Package
ID
mA f
MHz Gp
dB F
dB IP3INPUT
dBm P– 1 dB
dBm
CGY 59 Single stage MMIC amplifier
100 MHz to 3 GHz 6950
1850 16.5
12.0 1.3
1.7 – 4
15
4MW-6
CGY 60 Single stage MMIC amplifier
100 MHz to 3 GHz with internal
match t o 50 Ω at 1.7 … 2 GHz
6 950
1850 15.5
12.5 1.35
1.9 – 3.0
0 5
5MW-6
Integrated Power Amplifiers for Mobile Communications
Type Description Characteristics (TA = 25 °C) Package
ID
AVD
Vf
GHz Gp
dB POut
dBm
▼CGY 93P Two stage PA for GSM
applications 1.8 3.5 0.9 25.5 35.5 MW-16
CGY 94 Two stage PA for GSM or
AMPS ap plic at ions 1.2 3.6 0.9 23.6 33.6 MW-12
▼CGY 96 PA for GSM900 application s 1.8 3.5 0.9 35.5 35.5 MW-16
All power amplifiers in pulsed operation mode
CGY 180 PA for DECT and PCS
applications 0.45 3.0 1.89 27 27 MW-12
CGY 181 PA for PCN/PC S appli cat io ns 1.2 3.6 1.75 15.5 31.5 MW-12
▼CGY 184 F our stage PA for PCN
applications 1.67 3.5 1.8 34 34 MW-16
CGY 195 P A fo r DE CT applications 0.45 3.0 1.89 18 27 SCT-595
▼
▼ New type
CGY 196 PA for DECT applicat ions 0.11 3.0 1.89 32 26 SCT-598
Selection Guide
Semiconductor Group 5 1998-11-01
Integrated Multi Mode and Dual Band Power Amplifiers for Mobile Communications
Type Description Mode/Band Characteristics (TA = 25 °C) Package
Iop
AVD
Vf
MHz Gp
dB POut
dBm PAE
%
▼CGY 81 Tri mode PA f or
AMPS / C D M A /
TDMA
AMPS –3.5 824 - 849 24 31.5 55 MW-16
CDMA – 3.5 824 - 849 28 28 35
TDMA –3.5 824 - 849 27 30 40
▼CGY 191 Dual mode PA for
CDMA /TDMA C D MA [PCS] – 3.5 1850 - 1910 24 29 40 MW-16
TDMA [PCS] –3.5 1850 - 191 0 24 29 40
▼CGY 0819 Dual Band Tri Mode
PA for AMPS/
CDMA /TDMA
AMPS – 3.5 824 - 849 2 4 31.5 55 MW -16
CDMA –3.5 824 - 849 28 28 35
TDMA – 3.5824 - 849 273040
CDMA [PCS] –3.5 185 0 - 1910 24 29 40
TDMA [PCS] – 3.5 1850 - 191 0 24 29 40
▼CGY 0918 Dual Band PA for
GSM /PCN GSM 1.6 3.5 880 - 915 25 35 55 MW-16
PCN 1.4 3.5 1710 - 1785 24 34 45
▼
▼ New type
CGY 98 Broad band PA;
Matchable for GSM /
PCN
GSM 1.6 3.5 880 - 915 23 35 55 SCT-595
PCN 1.6 3.5 1710 - 1785 19 34 45
Variable Gain Amplifiers for Mobile Communications
Type Description Characteristics (TA = 25 °C) Package
ID
mA VDS
Vf
GHz G
dB ∆G
dB P– 1dB
dBm
CGY 120 Va riable gain amplifier for
GSM/PC N applications 45
45 3
30.9
1.8 22
20 55
55 14
14 MW-6
▼CGY 121A Variable gain amplifier for
GSM/PC N/ C D M A applications 45
45 3
30.9
1.8 19
17.5 53
53 14
14 MW-6
▼
▼ New type
CGY 121B Variable gain amplifier for
GSM/PC N/ C D M A applications 70
70 3
30.9
1.8 21.5
19.5 55
55 16
16 MW-6
Selection Guide
Semiconductor Group 6 1998-11-01
Mixer
Type Description Characteristics (TA = 25 °C) Package
Iop
mA VD
VFrequency Range
MHz GC
dB IP3
INPUT
dBm FSSB
dB PLO
dBm
CF 750 General pu rpose dua l gate
GaAs FET mixer 2.5 3.8 fRF, LO, IF ≤ 2000 15 – 5 4.5 – 3 SOT-143
CMY 91 M ixer with integrated IF
amplifilter 2.5 3 fIF ≤ 200
fRF ≤ 2500 9.5 0 8 – 3 MW-6
CMY 200 Ult ralinear downco nv ert er
1200 MHz to 40 MHz 50 5fIF = 30 … 100
fLO = 1000 … 1400 821.5 8– 5 MW-6
CMY 210 Ultralinear broadband mixer
with integrated LO-buffer 73fLO = 500 ... 25 00
fRF, fIF ≤ 2500 – 6.0 23 6.0 0 MW-6
▼CMY 211 Linear mixer with integrated
LO-buffer 2.5 3fLO = 500 … 2500
fRF, fIF < 3500 – 6.5 17.5 6.5 0MW-6
▼ New type
RF-SPDT Switch
Type Description Cha racteristics (TA = 25 °C) Package
▼ New type
f
GHz Ins ertion Lo s s
dB Isolation dB P– 1dB
dBm
▼CSY 240 RF-SPDT switch for mobile
communication applications 0.9
1.8 0.3
0.5 28
22 30 MW-6
RF Transistors
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
BF 517 N15 25 280 2.50 3.5 2 5 800 11.0 14 5800 SOT-23 17
■BF 569 P 35 30 280 0.95 4.5 3 10 800 12.5 3 10 800 SOT-23 23
■BF 660 P30 25 280 0.70 ––––9.2 310 800 SOT-23 24
■BF 660W P 30 25 280 0.70 – – – – 9.2 3 10 800 SOT-323 24
BF 770A N12 50 300 6.00 258900 13.5 30 8900 SOT-23 15
BF 771 N 12 80 580 8.00 1.3 10 8 900 14.5 30 8 900 SOT-23 6
BF 771W N12 80 580 8.00 1.3 10 8900 15.5 30 8900 SOT-323 6
BF 772 N 12 80 580 8.00 1.3 10 8 900 17.5 30 8 900 SOT-143 6
BF 775 N15 30 280 5.00 1.8 2 6 900 15.0 15 8900 SOT-23 13
■ Not for new design
Selection Guide
Semiconductor Group 7 1998-11-01
BF 775A N16 30 280 5.80 1.45 5 8 900 16.0 15 8900 SOT-23 14
BF 775W N 15 30 280 5.00 1.8 2 6 900 15.5 15 8 900 SOT-323 13
BF 799 N20 35 280 1.10 3.0 510 100 11.2 510 800 SOT-23 18
BF 799W N 20 35 280 1.10 3.0 5 10 100 11.2 5 10 800 SOT-323 18
■BF 840 N40 25 280 0.38 1.7 110 0.1 ––––SOT-23 19
■BF 841 N 40252800.381.71100.1––––SOT-2319
BFG 19S N15 100 1000 5.50 2.5 20 8900 13.5 70 8900 SOT-223 16
BFG 135A N 15 150 1000 6.00 2.0 30 8 900 14.0 100 8 900 SOT-223 8
BFG 193 N12 80 600 8.00 1.3 10 8900 15.5 30 8900 SOT-223 6
BFG 194 P 15 100 1000 5.00 2.8 20 8 900 11.0 70 8 900 SOT-223 22
BFG 196 N12 100 800 7.50 1.5 20 8900 14.0 50 8900 SOT-223 7
BFG 235 N 15 300 2000 5.50 2.7 60 8 900 12.0 200 8 900 SOT-223 9
BFP 81 N16 30 280 5.80 1.45 5 8 900 21.0 15 8900 SOT-143 14
BFP 93A N 12 50 300 6.00 2.0 5 8 900 18.0 30 8 900 SOT-143 15
BFP 136 W N12 150 1000 5.50 3.3 30 51800 9.5 80 51800 SOT-343 8
BFP 180 N 8 4 30 7.002.251 5 180012.01 5 1800SOT-143 1
BFP 180 W N8430 7.00 2.25 1 5 1800 11.5 1 5 1800 SOT-343 1
BFP 181 N 12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-143 3
BFP 181 R N12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-143R 3
BFP 181 W N 12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-343 3
BFP 182 N12 35 250 8.00 1.9 3 8 1800 15.0 10 81800 SOT-143 4
BFP 182 R N 12 35 250 8.00 1.9 3 8 1800 15.0 10 8 1800 SOT-143R 4
BFP 182 W N12 35 250 8.00 1.9 3 8 1800 15.5 10 81800 SOT-343 4
BFP 183 N 12 65 250 8.00 2.0 5 8 1800 14.0 15 8 1800 SOT-143 5
BFP 183 R N12 65 250 8.00 2.0 5 8 1800 14.0 15 81800 SOT-143R 5
BFP 183 W N 12 65 450 8.00 2.0 5 8 1800 14.5 15 8 1800 SOT-343 5
BFP 193 N12 80 580 8.00 2.1 10 81800 11.5 30 81800 SOT-143 6
BFP 193 W N 12 80 580 8.00 2.1 10 8 1800 13.0 30 8 1800 SOT-343 6
BFP 194 P15 100 700 5.00 2.8 20 8900 12.0 70 8900 SOT-143 22
BFP 196 N 12 100 700 7.50 2.5 20 8 1800 10.0 50 8 1800 SOT-143 7
BFP 196 W N12 100 700 7.50 2.5 20 81800 11.5 50 81800 SOT-343 7
BFP 280 N 8 10 80 7.50 2.0 1.5 5 1800 15.0 3 5 1800 SOT-143 2
BFP 280 W N810 80 7.50 2.0 1.5 51800 15.0 3 5 1800 SOT-343 2
■ Not for new design
RF Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
Selection Guide
Semiconductor Group 8 1998-11-01
BFQ 19S N15 75 1000 5.50 2.5 20 8900 11.5 70 8900 SOT-89 16
BFQ 81 N 16 30 280 5.80 1.45 5 8 900 16.0 15 8 900 SOT-23 14
BFQ 193 N12 80 600 7.50 1.3 10 8900 14.0 30 8900 SOT-89 6
BFR 35AP N 15 30 280 5.00 1.8 2 6 900 15.0 15 8 900 SOT-23 13
BFR 92P N15 30 280 5.00 1.8 2 6 900 15.0 15 8900 SOT-23 13
BFR 92W N 15 30 280 5.00 1.8 2 6 900 15.5 15 8 900 SOT-323 13
BFR 93A N12 50 300 6.00 2.0 5 8 900 13.5 30 8900 SOT-23 15
BFR 93AW N 12 50 300 6.00 2.0 5 8 900 15.0 30 8 900 SOT-323 15
BFR 106 N15 100 700 5.00 2.5 20 8900 12.5 70 8900 SOT-23 16
BFR 180 N 8 4 30 7.00 2.1 1 5 900 13.5 1 5 900 SOT-23 1
BFR 180W N8430 7.00 2.1 1 5 900 13.5 1 5 900 SOT-323 1
BFR 181 N 12 20 175 8.00 1.45 2 8 900 18.0 5 8 900 SOT-23 3
BFR 181W N12 20 175 8.00 1.45 2 8 900 18.5 5 8 900 SOT-323 3
BFR 182 N 12 35 250 8.00 1.2 3 8 900 17.5 10 8 900 SOT-23 4
BFR 182W N12 35 250 8.00 1.2 3 8 900 19.0 10 8900 SOT-323 4
BFR 183 N 12 65 450 8.00 1.2 5 8 900 16.5 15 8 900 SOT-23 5
BFR 183W N12 65 450 8.00 1.2 5 8 900 18.0 15 8900 SOT-323 5
BFR 193 N 12 80 580 8.00 1.3 10 8 900 14.5 30 8 900 SOT-23 6
BFR 193W N12 80 580 8.00 1.3 10 8900 15.5 30 8900 SOT-323 6
BFR 194 P 15 100 700 5.00 2.8 20 8 900 10.0 70 8 900 SOT-23 22
BFR 280 N810 80 7.50 1.5 1.5 5900 17.0 3 5 900 SOT-23 2
BFR 280W N 8 10 80 7.50 1.5 1.5 5 900 17.0 3 5 900 SOT-323 2
BFS 17P N15 25 280 2.50 3.5 2 5 800 11.0 14 5800 SOT-23 17
BFS 17W N 15 25 280 2.50 3.5 2 5 800 11.0 14 5 800 SOT-323 17
BFT 92 P15 25 200 5.00 2.0 2 8 900 13.5 15 8900 SOT-23 20
BFT 92W P 15 25 200 5.00 2.0 2 8 900 14.0 15 8 900 SOT-323 20
BFT 93 P12 35 300 5.50 2.7 2 8 900 11.5 30 8900 SOT-23 21
■ Not for new design
RF Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
Selection Guide
Semiconductor Group 9 1998-11-01
SIEGET®25-RF-BIPOLAR-Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz Fmin
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
BFP 405 N 4.5 12 55 25 1.15 22 1800 22 5 21800 SOT-343 10
BFP 420 N 4.5 35 160 25 1.05 5 2 1800 20 20 2 1800 SOT-343 11
BFP 450 N 4.5 100 450 24 1.25 10 2 1800 14 50 21800 SOT-343 12
▼▼ New type
BFP 490 N 4.5 600 1000 17.5 –––18009.520021800SCT-595–
SIEGET®45-RF-BIPOLAR-Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz Fmin
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
▼▼ New type
BFP 520 N 2.5 40 100 45 0.95 22 1800 23 20 21800 SOT-343 –
RF-Dual Transistor Arrays
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz Fmin
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
BFS 480 N 810 80 7.50 1.5 1.5 5900 18 35900 SOT-363 2
BFS 481 N 12 20 175 8.00 1.45 2 8 900 19 5 8 900 SOT-363 3
BFS 482 N 12 20 250 8.00 1.2 38900 19.5 10 8900 SOT-363 4
BFS 483 N 12 65 450 8.00 1.2 5 8 900 19 15 8 900 SOT-363 5
BFS 17S N 15 25 280 2.50 3.5 25800 11.0 14 5800 SOT-363 17
Selection Guide
Semiconductor Group 10 1998-11-01
Si MMlCs Broadband Amplifiers
Type Maximum
Ratings Characteristics (TA = 25 °C; VD = 4.7 V; ZO = 50 Ω)Package
ID
mA Ptot
mW Gain
dB NF
dB f
MHz Gain
dB NF
dB f
MHz
BGA 310 60 250 10 6.0 100 96.5 1000 SOT-143
BGA 312 60 250 12 5.5 100 11 6.0 1000 SOT-143
BGA 318 60 250 18 3.5 100 16 4.0 1000 SOT-143
Si MMICs in SIEGET®25 Technology
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C; VD = 3.0 V; ZO = 50 Ω)Package
ID
mA Ptot
mW Gain
dB NF
dB f
MHz Gain
dB NF
dB f
MHz
▼BGA 420 15 90 19 1.9 100 13 2.2 1800 SOT-343
▼BGA 425 25 150 27 1.9 100 18.5 2.2 1800 SOT-363
▼▼ New type
BGA 427 25 150 27 1.9 100 18.5 2.2 1800 SOT-343
Active Bias Controller
Stabilizing bias current for RF tr ans is t ors , NPN t rans is t ors (IC up t o 250 mA) and FETs
Type Maximum
Ratings DC Characteristics with stabilized NPN transistors:
Relative Ch ange of ∆IC / IC
Package
VCC
Vvs hFE vs VS∆IC / IC vs TA
BCR 400R 15 0.08 × ∆hFE / hFE 0.15 × ∆VS / VS0.2% / K SOT-143
BCR 400W 15 0.08 × ∆hFE / hFE 0. 15 × ∆VS / VS0.2% / K SOT-343
Selection Guide
Semiconductor Group 11 1998-11-01
Bipolar-Transistor Characteristic Curves
The curve numbers refer to the chip codes in the preceding tables.
Transition frequency fT vs. collector current IC
NPN Types
Selection Guide
Semiconductor Group 12 1998-11-01
NPN Types
PNP Types
Selection Guide
Semiconductor Group 13 1998-11-01
AF-Transistors
General Purpose Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
BC 807 P45 1000 330 200 ≤ 100 25 100 - 630 * 100 1≤ 0.70 500 50 SOT-23
BC 807W P 45 1000 250 200 ≤ 100 25 100 - 630 * 100 1 ≤ 0.70 500 50 SOT-323
BC 808 P25 1000 330 200 ≤ 100 25 100 - 630 * 100 1≤ 0.70 500 50 SOT-23
BC 808W P 25 1000 250 200 ≤ 100 25 100 - 630 * 100 1 ≤ 0.70 500 50 SOT-323
BC 817 N45 1000 330 170 ≤ 100 25 100 - 630 * 100 1≤ 0.70 500 50 SOT-23
BC 817W N 45 1000 250 170 ≤ 100 25 100 - 630* 100 1 ≤ 0.70 500 50 SOT-323
BC 818 N25 1000 330 170 ≤ 100 25 100 - 630 * 100 1≤ 0.70 500 50 SOT-23
BC 818W N 25 1000 250 170 ≤ 100 25 100 - 630* 100 1 ≤ 0.70 500 50 SOT-323
BC 846 N65 200 330 250 ≤ 15 30 110 - 450* 2 5 ≤ 0.60 100 5SOT-23
BC 846W N 65 200 250 250 ≤ 15 30 110 - 450 * 2 5 ≤ 0.60 100 5 SOT-32 3
BC 847 N45 200 330 250 ≤ 15 30 110 - 800* 2 5 ≤ 0.60 100 5SOT-23
BC 847W N 45 200 250 250 ≤ 15 30 110 - 800 * 2 5 ≤ 0.60 100 5 SOT-32 3
BC 848 N30 200 330 250 ≤ 15 30 110 - 800* 2 5 ≤ 0.60 100 5SOT-23
BC 848W N 30 200 250 250 ≤ 15 30 110 - 800 * 2 5 ≤ 0.60 100 5 SOT-32 3
BC 856 P65 200 330 250 ≤ 15 30 125 - 475* 2 5 ≤ 0.60 100 5SOT-23
BC 856W P 65 200 250 250 ≤ 15 30 125 - 475* 2 5 ≤ 0.60 100 5 SOT-323
BC 857 P45 200 330 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.60 100 5SOT-23
BC 857W P 45 200 250 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.60 100 5 SOT-323
BC 858 P30 200 330 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.60 100 5SOT-23
BC 858W P 30 200 250 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.60 100 5 SOT-323
BCP 51 P45 1500 1500 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 51M P 45 15 00 1000 125 < 100 30 40 - 250* 150 2 < 0.5 0 500 50 SCT-595
BCP 52 P60 1500 1500 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 52M P 60 1500 1000 125 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 53 P80 1500 1500 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 53M P 80 1500 1000 125 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 54 N45 1500 1500 100 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 54M N 45 1700 1000 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 55 N60 1500 1500 100 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 55M N 60 1700 1500 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 56 N80 1500 1500 100 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 56M N 80 1700 1500 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
▼ New type
Selection Guide
Semiconductor Group 14 1998-11-01
BCP 68 N 20 2000 1500 100 ≤ 100 25 85 - 400* 500 1 ≤ 0.50 1000 100 SOT-223
BCP 69 P20 2000 1500 100 ≤ 100 25 85 - 400* 500 1≤ 0.50 1000 10 0 SOT-223
▼BCP 70M P 32 3000 1700 100 ≤ 100 30 85 - 475* 500 1 ≤ 0.4 2000 200 SCT-595
▼BCP 71M P–3000 1700 – – – – – – – – – SCT-595
▼BCP 72M P 10 3000 1700 100 ≤ 100 8 85 - 475* 500 1 ≤ 0.3 2000 200 SCT-595
BCW 60 N32 200 330 250 ≤ 20 32 120 - 630* 2 5 ≤ 0.25 10 0.25 SOT-23
BCW 61 P 32 200 330 250 ≤ 20 32 120 - 630* 2 5 ≤ 0. 25 10 0.25 S OT-23
BCW 65 N32 1000 330 170 ≤ 20 32 100 - 630* 100 1≤ 0.70 500 50 SOT-23
BCW 66 N 45 1000 330 170 ≤ 20 45 100 - 630* 1 00 1 ≤ 0.70 500 50 S OT -23
BCW 67 P32 1000 330 200 ≤ 20 32 100 - 630* 100 1≤ 0.70 500 50 SOT-23
BCW 68 P 45 1000 330 200 ≤ 20 45 100 - 630* 100 1 ≤ 0.70 500 50 SOT-23
BCX 41 N125 1000 330 100 ≤ 100 100 ≥ 63 100 1≤ 0.90 300 30 SOT-23
BCX 42 P 125 1000 330 150 ≤ 100 100 ≥ 63 100 1 ≤ 0.90 300 30 SOT-23
BCX 51 P45 1500 1000 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-89
BCX 52 P 60 1500 1000 125 ≤ 100 30 40 - 250* 150 2 ≤ 0.50 500 50 SOT-89
BCX 53 P80 1500 1000 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-89
BCX 54 N 45 1500 1000 100 ≤ 100 30 40 - 250* 150 2 ≤ 0.50 500 50 SOT-89
BCX 55 N60 1500 1000 100 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-89
BCX 56 N 80 1500 1000 100 ≤ 100 30 40 - 250* 150 2 ≤ 0.50 500 50 SOT-89
BCX 68 N20 2000 1000 100 ≤ 100 25 85 - 400* 500 1≤ 0.50 1000 10 0 SOT-89
BCX 69 P 20 2000 1000 100 ≤ 100 25 85 - 400* 500 1 ≤ 0.50 1000 10 0 SOT-89
BCX 70 N45 200 330 250 ≤ 20 45 120 - 630* 2 5 ≤ 0.25 10 0.25 SOT-23
BCX 71 P 45 200 330 250 ≤ 20 45 120 - 630* 2 5 ≤ 0.25 10 0.25 S OT - 23
BDP 947 N45 5000 1500 100 100 45 40 - 475 500 1≤ 0.8 2000 200 SOT-223
BDP 948 P 45 5000 1500 100 100 45 40 - 475 500 1 ≤ 0.8 2 000 200 S OT -223
BDP 949 N60 5000 1500 100 100 60 40 - 475 500 1≤ 0.8 2000 200 SOT-223
BDP 950 P 60 5000 1500 100 100 60 40 - 475 500 1 ≤ 0.8 2 000 200 S OT -223
BDP 951 N80 5000 1500 100 100 80 40 - 475 500 1≤ 0.8 2000 200 SOT-223
BDP 952 P 80 5000 1500 100 100 80 40 - 475 500 1 ≤ 0.8 2 000 200 S OT -223
BDP 953 N100 5000 1500 100 100 100 40 - 475 500 1≤ 0.8 2 000 200 SOT-223
BDP 954 P 10 0 5000 1500 100 100 10 0 40 - 475 500 1 ≤ 0.8 2 000 200 SOT -223
BDP 955 N120 5000 1500 100 100 120 40 - 475 500 1≤ 0.8 2 000 200 SOT-223
BDP 956 P 12 0 5000 1500 100 100 12 0 40 - 475 500 1 ≤ 0.8 2 000 200 SOT -223
SMBTA 05 N60 500 330 100 ≤ 100 60 ≥ 10 0 100 1≤ 0.25 100 10 SOT-23
▼ New type
General Purpose Transistors (cont’d)
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Selection Guide
Semiconductor Group 15 1998-11-01
SMBTA 06 N80 500 330 100 ≤ 100 80 ≥ 10 0 100 1≤ 0.25 100 10 SOT-23
▼SMBTA 06M N 80 500 330 100 ≤ 100 80 ≥ 100 100 1 ≤ 0.25 100 10 SCT-595
SMBTA 20 N40 200 330 125 ≤ 100 30 40 - 400 510 ≤ 0.25 10 1SOT-23
SMBTA 55 P 60 500 330 100 ≤ 100 60 ≥ 100 100 1 ≤ 0.25 100 10 SOT-23
SMBTA 56 P80 500 330 100 ≤ 100 80 ≥ 10 0 100 1≤ 0.25 100 10 SOT-23
▼SMBTA 56M P 80 500 330 100 ≤ 100 80 ≥ 100 10 0 1 ≤ 0.25 100 10 SCT-595
SMBTA 70 P40 200 330 125 ≤ 100 30 40 - 400 510 ≤ 0.25 10 1SOT-23
* Available in
hFE subgroups
▼ New type
Type
N = NPN
P = PNP
Maximum
Ratings Characterist ic s (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Double Transistor Arrays
▼BC 846PN N/P 65 200 330 250 ≤ 15 30 110 - 450* 2 5 ≤ 0.60 100 5SOT-363
▼BC 846S N 65 200 330 250 ≤ 15 3 0 110 - 45 0* 2 5 ≤ 0.60 100 5 SOT-363
BC 847PN N/P 45 200 250 250 ≤ 15 30 290 2 5 ≤ 0.60 100 5SOT-363
BC 847S N 45 200 250 250 ≤ 15 30 290 2 5 ≤ 0.60 100 5 SOT-363
▼BC 856S P65 200 330 250 ≤ 15 30 125 - 475* 2 5 ≤ 0.60 100 5SOT-363
BC 857S P 45 200 250 250 ≤ 15 30 290 2 5 ≤ 0.60 100 5 SOT-363
▼SMBT
3904S N40 200 250 300 ≤ 50 30 100 - 300 10 1≤ 0.30 50 5SOT-363
▼SMBT
3904PN N/P 40 200 250 250 ≤ 50 30 100 - 300 10 1 ≤ 0. 4 50 5 SOT-36 3
▼
▼ New type
SMBT
3906S P40 200 250 250 ≤ 50 30 100 - 300 10 1≤ 0.4 50 5SOT-363
General Purpose Transistors (cont’d)
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Selection Guide
Semiconductor Group 16 1998-11-01
* Available in hFE subgroups
Type
N = NPN
P = PNP
Maximum
Ratings Characteri sti cs (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Double Transistors
BCV 61 N30 200 300 250 ≤ 15 30 110 - 800* 2 5 ≤ 0.60 100 5SOT-143
BCV 62 P 30 200 300 250 ≤ 15 30 125 - 800 * 2 5 ≤ 0.65 100 5 SOT-143
Low-Noise Transistors
BC 849 N30 200 330 250 ≤ 15 30 200 - 800* 2 5 ≤ 0.25 10 0.5 SOT-23
BC 849W N 30 200 250 250 ≤ 15 30 200 - 800* 2 5 ≤ 0 25 10 0.5 SOT-3 23
BC 850 N45 200 330 250 ≤ 15 30 200 - 800* 2 5 ≤ 0.25 10 0.5 SOT-23
BC 850W N 45 200 250 250 ≤ 15 30 200 - 800* 2 5 ≤ 0.25 10 0.5 SOT-323
BC 859 P30 200 330 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.3 10 0.5 SOT -23
BC 859W P 30 200 250 250 ≤ 15 30 125 - 800 * 2 5 ≤ 0.3 10 0.5 SOT-323
BC 860 P45 200 330 250 ≤ 15 30 220 - 800* 2 5 ≤ 0.3 10 0.5 SOT -23
BC 860W P 45 200 250 250 ≤ 15 30 220 - 800 * 2 5 ≤ 0.3 10 0.5 SOT-323
BCW 60FF,FN
N32 200 330 250 ≤ 20 32 250 - 630* 2 5 ≤ 0.25 10 0.25 SOT-2 3
BCW 61FF,FN
P32 200 330 250 ≤ 20 32 250 - 630 * 2 5 ≤ 0.25 10 0.25 SOT-2 3
SMBT 5086 P50 50 330 40 ≤ 50 35 ≥ 150 10 5≤ 0.30 10 1SOT-23
SMBT 5087 P 50 50 330 40 ≤ 50 35 ≥ 250 10 5 ≤ 0.30 10 1 SOT-23
SMBT 6428 N50 200 330 100 ≤ 10 30 ≥ 250 10 5≤ 0.2 10 0.5 SOT-2 3
SMBT 6429 N 45 200 330 100 ≤ 10 30 ≥ 500 10 5 ≤ 0.2 10 0.5 SOT-23
Selection Guide
Semiconductor Group 17 1998-11-01
Digital Transistors
Type
N = NPN
P = PNP
Maximum Ratings Resistance
Value Characteristics (TA = 25 °C) Package
VCE0
V
Vi (on)
V
IC
mA
Ptot
mW
R1
kΩ
R2
kΩ
fT
MHz
10 mA/5 V
hFE (min.)
IC = 5 mA
VCE = 5 V
Vi (on) min
2 mA/
0.3 V
Vi (off) max
100 mA/
5 V
BCR 108 N50 10 100 200 2.2 47.0 170 70 0.5 0.8 SOT-23
BCR 108W N 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-323
BCR 112 N50 15 100 200 4.7 4.7 140 20 1.0 1.5 SOT-23
BCR 116 N 50 15 100 200 4.7 47.0 160 70 0.5 0.8 SOT-23
BCR 116 W N50 15 100 250 4.7 47.0 160 70 0.5 0.8 SOT-323
BCR 119 N 50 15 100 200 4.7 – 150 120 0.5 0.8 SOT-23
BCR 133 N50 20 100 330 10.0 10.0 130 30 1.0 1.5 SOT-23
BCR 133W N 50 20 100 250 10.0 10.0 130 30 1.0 1.5 SOT-323
BCR 135 N50 20 100 200 10.0 47.0 150 70 0.5 1.0 SOT -23
BCR 135W N 50 20 100 250 10.0 47.0 150 70 0.5 1.0 SOT-323
BCR 141 N50 30 100 200 22.0 22.0 130 50 1.0 1.5 SOT-23
BCR 141W N 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-323
BCR 142 N50 30 100 200 22.0 47.0 150 70 1.5 1.2 SOT-23
BCR 142W N 50 30 100 250 22.0 47.0 150 70 1.5 1.2 SOT-323
BCR 146 N50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-23
BCR 146W N 50 50 70 250 47.0 22.0 150 50 1.5 2.6 SOT-323
BCR 148 N50 50 70 200 47.0 47.0 100 70 1.0 1.5 SOT-23
BCR 148W N 50 50 70 250 47.0 47.0 100 70 1.0 1.5 SOT-323
BCR 158 P50 10 100 200 2.2 47.0 200 70 0.5 0.8 SOT-23
BCR 158W P 50 10 100 250 2.2 47.0 200 70 0.5 0.8 SOT-323
BCR 162 P50 15 100 200 4.7 4.7 200 20 1.0 1.5 SOT-23
BCR 166 P 50 15 100 200 4.7 47.0 160 70 0.5 0.8 SOT-23
BCR 166W P50 15 100 250 4.7 47.0 160 70 0.5 0.8 SOT-323
BCR 169 P 50 15 100 200 4.7 – 200 120 0.5 0.8 SOT-23
BCR 183 P50 20 100 200 10.0 10.0 200 30 1.0 1.5 SOT-23
BCR 185 P 50 20 100 200 10.0 47.0 200 70 0.5 1.0 SOT-23
BCR 185W P50 20 100 250 10.0 47.0 200 70 0.5 1.0 SOT-323
BCR 191 P 50 30 100 200 22.0 22.0 200 50 1.0 1.5 SOT-23
BCR 192 P50 30 100 330 22.0 47.0 200 70 1.5 1.2 SOT-23
BCR 196 P 50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-23
BCR 196W P50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-323
BCR 198 P 50 50 70 200 47.0 47.0 190 70 1.0 1.5 SOT-23
BCR 198W P50 50 70 250 47.0 47.0 190 70 1.0 1.5 SOT-323
BCR 503 N 50 12 500 330 2.2 2.2 100 40 1.0 1.5 SOT-23
Selection Guide
Semiconductor Group 18 1998-11-01
BCR 505 N50 12 500 330 2.2 10.0 100 70 0.5 1.0 SOT-23
BCR 512 N 50 30 500 330 4.7 4.7 100 60 1.0 1.5 SOT-23
BCR 519 N50 30 500 330 4.7 –100 120 0.5 0.8 SOT-23
BCR 521 N 50 10 500 330 1.0 1.0 100 20 1.0 1.5 SOT-23
BCR 523 N50 12 500 330 1.0 10.0 100 70 0.4 1.0 SOT-23
BCR 533 N 50 40 500 330 10.0 10.0 100 70 1.1 1.5 SOT-23
BCR 553 P50 12 500 330 2.2 2.2 150 40 1.0 1.5 SOT-23
BCR 555 P 50 12 500 330 2.2 10.0 100 70 0.5 1.0 SOT-23
BCR 562 P50 30 500 330 4.7 4.7 150 60 1.0 1.5 SOT-23
BCR 569 P 50 30 500 330 4.7 – 150 120 0.5 0.8 SOT-23
BCR 571 P50 10 500 330 1.0 1.0 150 20 11.5 SOT-23
BCR 573 P 50 12 500 330 1.0 10.0 100 70 0.7 1.0 SOT-23
BCR 583 P50 40 500 330 10.0 10.0 150 70 1.1 1.5 SOT-23
Digital Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum Ratings Resistance
Value Characteristics (TA = 25 °C) Package
VCE0
V
Vi (on)
V
IC
mA
Ptot
mW
R1
kΩ
R2
kΩ
fT
MHz
10 mA/5 V
hFE (min.)
IC = 5 mA
VCE = 5 V
Vi (on) min
2 mA/
0.3 V
Vi (off) max
100 mA/
5 V
Selection Guide
Semiconductor Group 19 1998-11-01
Double Digital Transistors Array
Type
N = NPN
P = PNP
Maximu m Ratings Resis tan ce
Value Characteristics (TA = 25 °C) Package
VCE0
V
Vi (on)
V
IC
mA
Ptot
mW
R1
kΩ
R2
kΩ
fT/MHz
10 mA
/5 V
hFE (min.)
IC = 5 mA
VCE = 5 V
Vi (on) min
2 mA/
0.3 V
Vi (off) max
100 µA/
5 V
BCR 08 PN N/P 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-363
BCR 10 PN N/P 50 25 100 250 10.0 10.0 130 30 1.0 1.5 SOT-363
BCR 22 PN N/P 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-363
BCR 35 PN N/P 50 20 100 250 10 47.0 150 70 0.5 1.0 SOT-363
BCR 48 PN N/P 50 50/10 100 250 2.2/47 47/47 100 70 11.5 SOT-363
BCR 108 S N 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-363
BCR 119 S N50 15 100 250 4.7 –150 120 0.5 0.8 SOT-363
BCR 133 S N 50 20 100 250 10.0 10.0 130 30 1.0 1.5 SOT-363
BCR 135 S N50 20 100 250 10.0 47.0 150 70 0.5 1.0 SOT-363
BCR 141 S N 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-363
BCR 148 S N50 50 100 250 47.0 47.0 100 70 1.0 1.5 SOT-363
BCR 169 S P 50 15 100 250 4.7 – 200 120 0.5 0.8 SOT-363
BCR 183 S P50 20 100 250 10.0 10.0 200 30 1.0 1.5 SOT-363
BCR 185 S P 50 20 100 250 10.0 47.0 200 70 0.5 1.0 SOT-363
BCR 191S P50 30 100 250 22.0 22.0 200 50 1.0 1.5 SOT-363
BCR 198 S P 50 50 100 250 47.0 47.0 190 70 1.0 1.5 SOT-363
Selection Guide
Semiconductor Group 20 1998-11-01
Switching Trans istors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
BSS 63 P100 1000 330 150 ≤ 100 80 ≥ 30 10 5≤ 0.25 25 2.50 SOT-23
BSS 64 N 80 1000 330 100 ≤ 100 80 80 10 1 ≤ 0.70 4 0.40 SOT -23
BSS 79 N40 1000 330 250 ≤ 10 60 40 - 300* 150 10 ≤ 1.30 500 50 SOT-23
BSS 80 P 40 1000 330 250 ≤ 10 50 40 - 300* 150 10 ≤ 1.60 500 50 SOT -23
BSS 81 N35 1000 330 250 ≤ 10 60 40 - 300* 150 10 ≤ 1.30 500 50 SOT-23
BSS 82 P 60 1000 330 250 ≤ 10 50 40 - 300* 150 10 ≤ 1.60 500 50 SOT -23
PZT 2222 N30 600 1500 200 ≤ 20 50 100 - 300 150 10 ≤ 0.40 150 15 SOT-223
PZT 2222A N 40 600 1500 200 ≤ 10 50 100 - 300 1 50 10 ≤ 0.30 150 15 S OT -223
PZT 2907 P40 600 1500 200 ≤ 20 50 100 - 300 150 10 ≤ 0.40 150 15 SOT-223
PZT 2907A P 60 600 1500 200 ≤ 10 50 100 - 300 1 50 10 ≤ 0.40 150 15 S OT -223
PZT 3904 N40 200 1500 300 ≤ 50 30 100 - 300 10 1≤ 0.30 50 5SOT-223
PZT 3906 P 40 200 1500 250 ≤ 50 30 100 - 300 10 1 ≤ 0.40 50 5 SOT-223
SMBT 2222 N30 600 330 250 ≤ 10 50 100 - 300 150 10 ≤ 0.40 150 15 SOT-23
SMBT 2222A N 40 600 330 300 ≤ 10 60 100 - 300 150 10 ≤ 0.30 150 15 SOT-23
SMBT 2907 P40 600 330 200 ≤ 20 50 100 - 300 150 10 ≤ 0.40 150 15 SOT-23
SMBT 2907A P 60 600 330 200 ≤ 10 50 100 - 300 150 10 ≤ 0.40 150 15 SOT -23
SMBT 3904 N40 200 330 300 ≤ 50 30 100 - 300 10 1≤ 0.30 50 5SOT-23
SMBT 3906 P 40 200 330 250 ≤ 50 30 100 - 300 10 1 ≤ 0.40 50 5 SOT-23
SMBT 4124 N25 200 330 300 ≤ 50 20 120 - 360 2 1 ≤ 0.30 50 5SOT-23
SMBT 4126 P 25 200 330 250 ≤ 50 20 120 - 360 2 1 ≤ 0.40 50 5 SOT-23
SXT 2222A N40 600 1000 300 ≤ 10 60 100 - 300 150 10 ≤ 0.30 150 15 SOT-89
SXT 2907A P 60 600 1000 200 ≤ 10 60 100 - 300 1 50 10 ≤ 0.40 150 15 S OT -89
SXT 3904 N40 200 1000 300 ≤ 50 30 100 - 300 10 1≤ 0. 30 50 5SOT-89
SXT 3906 P 40 200 1000 250 ≤ 50 30 100 - 300 10 1 ≤ 0.40 50 5 SOT-89
Selection Guide
Semiconductor Group 21 1998-11-01
Darlington Transistors
Type
N = NPN
P = PNP
Maximum
Ratings Char ac ter is ti cs (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
BCP 28 P30 800 1500 200 ≤ 100 30 ≥ 20000 100 5≤ 1.0 100 0.1 SOT-223
BCP 29 N 30 800 1500 200 ≤ 100 30 ≥ 20000 100 5 ≤ 1.0 100 0.1 SOT-223
BCP 48 P60 800 1500 200 ≤ 100 60 ≥ 10000 100 5≤ 1.0 100 0.1 SOT-223
BCP 49 N 60 800 1500 200 ≤ 100 60 ≥ 10000 100 5 ≤ 1.0 100 0.1 SOT-223
BCV 26 P30 800 360 200 ≤ 100 30 ≥ 20000 100 5≤ 1.0 100 0.1 SOT-23
BCV 27 N 30 800 360 170 ≤ 100 30 ≥ 2000 0 100 5 ≤ 1.0 100 0.1 SOT-23
BCV 28 P30 800 1000 200 ≤ 100 30 ≥ 20000 100 5≤ 1.0 100 0.1 SOT-89
BCV 29 N 30 800 1000 150 ≤ 100 30 ≥ 20000 100 5 ≤ 1.0 100 0.1 SOT89
BCV 46 P60 800 360 200 ≤ 100 60 ≥ 10000 100 5≤ 1.0 100 0.1 SOT-23
BCV 47 N 60 800 360 170 ≤ 100 60 ≥ 1000 0 100 5 ≤ 1.0 100 0.1 SOT23
BCV 48 P60 800 1000 200 ≤ 100 60 ≥ 10000 100 5≤ 1.0 100 0.1 SOT-89
BCV 49 N 60 800 1000 150 ≤ 100 60 ≥ 10000 100 5 ≤ 1.0 100 0.1 SOT-89
BSP 50 N45 2000 1500 200 ≤ 10 0 60 ≥ 2000 500 10 ≤ 1.8 1000 1.0 SOT-223
BSP 51 N 60 2000 1500 200 ≤ 10 0 80 ≥ 2000 500 10 ≤ 1.8 1000 1 0 SOT-223
BSP 52 N80 2000 1500 200 ≤ 10 0 90 ≥ 2000 500 10 ≤ 1.8 1000 1.0 SOT-223
BSP 60 P 45 2000 1500 200 ≤ 100 60 ≥ 2000 500 10 ≤ 1.8 1000 1.0 SOT-223
BSP 61 P60 2000 1500 200 ≤ 10 0 80 ≥ 2000 500 10 ≤ 1.8 1000 1.0 SOT-223
BSP 62 P 80 2000 1500 200 ≤ 100 90 ≥ 2000 500 10 ≤ 1.8 1000 1.0 SOT223
PZTA 13 N30 500 1500 ≥ 125 ≤ 100 30 ≥ 10000 100 5≤ 1.5 100 0.1 SOT-223
PZTA 14 N 30 500 1500 ≥ 125 ≤ 100 30 ≥ 20000 1 00 5 ≤ 1.5 100 0.1 SOT223
PZTA 63 P30 800 1500 ≥ 125 ≤ 100 30 ≥ 10000 100 5≤ 1.5 100 0.1 SOT-223
PZTA 64 P 30 800 1500 ≥ 125 ≤ 10 0 30 ≥ 20000 1 00 5 ≤ 1.5 100 0.1 SOT-223
SMBTA 13 N30 500 330 ≥ 125 ≤ 100 30 ≥ 10000 100 5≤ 1.5 100 0.1 SOT-23
SMBTA 14 N 30 500 330 ≥ 12 5 ≤ 100 30 ≥ 20000 100 5 ≤ 1.5 100 0.1 SOT-23
SMBTA 63 P30 800 330 ≥ 125 ≤ 100 30 ≥ 10000 100 5≤ 1.5 100 0.1 SOT-23
SMBTA 64 P 30 800 330 ≥ 125 ≤ 100 30 ≥ 2000 0 100 5 ≤ 1.5 100 0.1 SOT-23
SMBT 6427 N40 800 360 ≥ 130 ≤ 50 30 ≥ 20000 100 5≤ 1.5 500 0.5 SOT-23
Selection Guide
Semiconductor Group 22 1998-11-01
High-Voltage Transistors
Type
N = NPN
P = PNP
Maximum Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
BF 622 N250 100 1000 100 ≤ 100 200 ≥ 50 25 20 ≤ 0. 5 10 1SOT-89
BF 623 P 250 100 1000 100 ≤ 100 200 ≥ 50 25 20 ≤ 0.5 10 1 SOT-89
BF 720 N300 100 1500 100 ≤ 10 200 ≥ 50 25 20 ≤ 0.6 30 5SOT-223
BF 721 P 300 100 1500 100 ≤ 10 200 ≥ 50 25 20 ≤ 0.6 30 5 SOT-223
BF 722 N250 100 1500 100 ≤ 10 200 ≥ 50 25 20 ≤ 0.6 30 5SOT-223
BF 723 P 250 100 1500 100 ≤ 10 200 ≥ 50 25 20 ≤ 0.6 30 5 SOT-223
BFN 16 N250 500 1000 70 ≤ 100 200 ≥ 40 30 10 ≤ 0.4 20 2SOT-89
BFN 17 P 250 500 1000 100 ≤ 100 200 ≥ 40 30 10 ≤ 0.4 20 2 SOT-89
BFN 18 N300 500 1000 70 ≤ 100 250 ≥ 30 30 10 ≤ 0.5 20 2SOT-89
BFN 19 P 300 500 1000 100 ≤ 100 250 ≥ 30 30 10 ≤ 0.5 20 2 SOT-89
BFN 20 N300 100 1000 100 ≤ 10 0 250 ≥ 40 25 20 ≤ 0.5 10 1SOT-89
BFN 21 P 300 100 1000 100 ≤ 100 250 ≥ 40 25 20 ≤ 0.5 10 1 SOT-89
BFN 22 N250 100 360 100 ≤ 10 0 200 ≥ 50 25 20 ≤ 0.5 10 1SOT-23
BFN 23 P 250 100 360 100 ≤ 100 200 ≥ 50 25 20 ≤ 0.5 10 1 SOT-23
BFN 24 N250 500 360 70 ≤ 100 200 ≥ 40 30 10 ≤ 0.4 20 2SOT-23
BFN 25 P 250 500 360 100 ≤ 100 200 ≥ 40 30 10 ≤ 0.4 20 2 SOT-23
BFN 26 N300 500 360 70 ≤ 100 250 ≥ 30 30 10 ≤ 0.5 20 2SOT-23
BFN 27 P 300 500 360 100 ≤ 100 250 ≥ 30 30 10 ≤ 0.5 20 2 SOT-23
BFN 36 N250 500 1500 70 ≤ 100 200 ≥ 40 30 10 ≤ 0.4 20 2SOT-223
BFN 37 P 250 500 1500 100 ≤ 100 200 ≥ 40 30 10 ≤ 0.4 20 2 SOT-223
BFN 38 N300 500 1500 70 ≤ 100 250 ≥ 30 30 10 ≤ 0.5 20 2SOT-223
BFN 39 P 300 500 1500 100 ≤ 100 250 ≥ 30 30 10 ≤ 0.5 20 2 SOT-223
PZTA 42 N300 500 1500 70 ≤ 100 200 ≥ 40 30 10 ≤ 0.5 20 2SOT-223
PZTA 43 N 200 500 1500 70 ≤ 100 160 ≥ 40 30 10 ≤ 0.4 20 2 SOT-223
PZTA 92 P300 500 1500 100 ≤ 250 200 ≥ 25 30 10 ≤ 0.5 20 2SOT-223
PZTA 93 P 200 500 1500 100 ≤ 250 160 ≥ 25 30 10 ≤ 0.4 20 2 SOT-223
SMBTA 42 N300 500 360 70 ≤ 100 200 ≥ 40 30 10 ≤ 0. 5 20 2SOT-23
▼SMBTA
42M N300 500 1000 70 ≤ 100 200 ≥ 40 30 10 ≤ 0.5 20 2 SCT-595
SMBTA 43 N200 500 360 70 ≤ 100 160 ≥ 40 30 10 ≤ 0. 4 20 2SOT-23
SMBTA 92 P 300 500 360 100 ≤ 250 200 ≥ 25 30 10 ≤ 0.5 20 2 SOT-23
▼SMBTA
92M P300 500 1000 100 ≤ 25 0 200 ≥ 25 30 10 ≤ 0.5 20 2SCT-595
▼ New type
Selection Guide
Semiconductor Group 23 1998-11-01
SMBTA 93 P200 500 360 100 ≤ 250 160 ≥ 25 30 10 ≤ 0.4 20 2SOT-23
SXTA 42 N 300 500 1000 70 ≤ 100 200 ≥ 40 30 10 ≤ 0.5 20 2 SOT-89
SXTA 43 N200 500 1000 70 ≤ 100 160 ≥ 40 30 10 ≤ 0.4 20 2SOT-89
SXTA 92 P 300 500 1000 100 ≤ 25 0 200 ≥ 25 30 10 ≤ 0.5 20 2 SOT-89
SXTA 93 P200 500 1000 100 ≤ 250 160 ≥ 25 30 10 ≤ 0. 4 20 2SOT-89
▼ New type
High-Voltage Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Selection Guide
Semiconductor Group 24 1998-11-01
RF-Diodes
Varactor (Tuning) Diodes
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
(see
below)
VR
VIF
mA CT at
pF VR
VCT
pF VR
VCRatio IR
nA VR
V
BB 439 30 20 29 35.0 25 5.8 ≤ 20 28 SOD- 323 Q
BB 535 30 20 18.7 1 2.1 28 8.9 ≤ 10 30 SOD-323 A
BB 545 30 20 20 12.0 28 10.0 ≤ 10 30 SOD-323 C
▼BB 555 30 20 18.7 1 2.1 28 8.9 ≤ 10 30 SCD -80 A
▼BB 565 30 20 20 12.0 28 10.0 ≤ 10 30 SCD-80 C
BB 639 30 20 38.3 1 2.65 28 14.5 ≤ 10 30 SOD -323 K
BB 639 C 30 20 39 12.55 28 15.3 ≤ 10 30 SOD-323 B
▼BB 644 30 20 41.8 1 2.55 28 16.4 ≤ 10 30 SOD -323 –
▼BB 659 30 20 38.3 12.65 28 14.5 ≤ 10 30 SCD-80 K
▼BB 659C 30 20 39 1 2.55 28 15.3 ≤ 10 30 SC D -80 B
BB 640 30 20 69 13.05 28 22.6 ≤ 10 30 SOD-323 N
▼BB 664 30 20 41.8 1 2.55 28 16.4 ≤ 10 30 SC D -80 –
▼BB 669 30 20 56.5 12.7 28 20.9 ≤ 10 30 SOD-323 –
▼BB 689 30 20 56.5 1 2.7 28 20.9 ≤ 10 30 SCD-80 –
BB 804 (Dual) 20 50 44.75 226.15 81.71 ≤ 20 16 SOT-23 E
BB 814 (Dual) 20 50 44.75 2 20.8 8 2.15 ≤ 20 16 SOT -23 O
BB 833 30 20 9.3 10.75 28 12.4 ≤ 20 30 SOD-323 F
BB 835 30 20 9.1 1 0.62 28 14.7 ≤ 10 30 SOD-323 G
▼BB 857 30 20 6.6 10.54 28 12.2 ≤ 10 30 SCD-80 –
BB 914 (Dual) 20 50 43.75 2 18.7 8 2.34 ≤ 20 16 SOT -23 P
BBY 51 (Dual) 720 5.30 13.10 41.75 ≤ 10 6SOT-23 H
▼BBY 51- 02W 7 20 5.30 1 3.10 4 1.75 ≤ 10 6 S C D -80 H
BBY 51- 03 W 720 5.30 13.10 41.75 ≤ 10 6SOD-323 H
BBY 51- 07 (D u al ) 7 20 5.30 1 3.10 4 1.75 ≤ 10 6 SOT -143 H
BBY 52 (Dual) 720 1.75 11.25 41.40 ≤ 10 6SOT-23 I
▼BBY 52- 02W 7 20 1.75 1 1.25 4 1.40 ≤ 10 6 S C D -80 I
BBY 52- 03 W 720 1.75 11.25 41.40 ≤ 10 6SOD-323 I
BBY 53 (Dual) 6 20 5.30 1 2.40 3 2.20 ≤ 10 4 SOT-23 L
▼BBY 53- 02W 620 5.30 12.40 32.20 ≤ 10 4SCD-80 L
BBY 53- 03 W 6 20 5.30 1 2.40 3 2.20 ≤ 10 4 SOD -323 L
▼BBY 55- 02W 16 20 15 2 6 10 2.5 ≤ 3 15 SCD-80 H
▼BBY 55- 03W 16 20 15 2 6 10 2.5 ≤ 3 15 SOD- 323 H
▼ New type
Selection Guide
Semiconductor Group 25 1998-11-01
Varactor (Tuning) Diodes Characteristic Curves
The curve numbers refer to the chip codes in the preceding table.
Diodes Capacitance CT vs. Reverse Voltage VR
▼BBY 56- 02W 82041117.532.34≤ 10 8 SCD-80 H
▼BBY 56- 03W 820 41 117.5 32.34 ≤ 10 8SOD-323 H
▼BBY 57- 02W 16 20 17.5 1 4.73 4 3.7 ≤ 10 16 SCD-80 H
▼BBY 57- 03W 16 20 17.5 14.73 43.7 ≤ 10 16 SOD- 323 H
▼BBY 58- 02W 16 20 18.3 1 6.0 4 3.0 ≤ 10 16 SCD-80 H
▼BBY 58- 03W 16 20 18.3 16.0 43.0 ≤ 10 16 SOD- 323 H
▼ New type
Varactor (Tuning) Diodes
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
(see
below)
VR
VIF
mA CT at
pF VR
VCT
pF VR
VCRatio IR
nA VR
V
Selection Guide
Semiconductor Group 26 1998-11-01
PIN Diodes (General Purpose, Switching)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
V
IF
mA
rf
IF = 10 µA
f = 100 MHz
rf
IF = 10 mA
f = 100 MHz
CT
VR = 0 V
f = 100 MH z
τL
IF = 10 mA
IR = 6/3 mA
BA 592 35 100 10 Ω0.4 Ω1.20 pF 120 ns SOD-323 P1
BA 595 50 50 1.5 kΩ4.5 Ω0.23 pF 1.6 µsSOD-323P9
BA 597 50 100 2.3 k Ω4.5 Ω0.32 pF 2.3 µsSOD-323 P5
BA 885 50 50 1,5 Ω4.5 Ω0.23 pF 1,6 µsSOT-23P9
▼BA 892 35 100 10 Ω0.4 1.20 pF 120 ns SCD-80 P1
BAR 14-1 (Dual) 100 100 2. 5 k Ω8 Ω0.2 pF 1 µsSOT-23P4
BAR 15-1 (Dual) 100 100 2.5 kΩ8 Ω0.2 pF 1 µsSOT-23 P4
BAR 16-1 (Dual) 100 100 2. 5 k Ω8 Ω0.2 pF 1 µsSOT-23P4
BAR 17 100 100 1 k Ω3.5 Ω0.37 pF 3.3 µsSOT-23 P6
B AR 60 (Triple) 100 100 2.5 kΩ7 Ω0.2 pF 1 µsSOT-143P4
B AR 61 (Triple) 100 100 2.5 kΩ7 Ω0. 2 pF 1 µsSOT-143 P4
BAR 63 35 100 70 Ω1 Ω0.3 pF 100 ns SOT-23 P2
BAR 63-04 (Dual ) 35 100 70 Ω1 Ω0.3 pF 100 ns SOT-23 P2
BAR 63-05 (Dual ) 35 100 70 Ω1 Ω0.3 pF 100 ns SOT-23 P2
BAR 63-06 (Dual ) 35 100 70 Ω1 Ω0.3 pF 100 ns SOT-23 P2
▼BAR 63 -02W 35 100 70 Ω1 0.3 pF 100 ns SC D -80 P2
BAR 63 -03W 35 100 70 Ω1 Ω0.3 pF 100 ns SOD-323 P2
▼BAR 63-04W (Dual) 35 100 70 Ω1 0.3 pF 100 ns SOT-323 P 2
▼BAR 63-05W (Dual) 35 100 70 Ω10.3 pF 100 ns SOT-323 P2
▼BAR 63-06W (Dual) 35 100 70 Ω1 0.3 pF 100 ns SOT-323 P 2
BAR 64 200 100 600 Ω2 Ω0.3 pF 1.4 µsSOT-23 P7
BAR 64-04 (Dual ) 200 100 600 Ω2 Ω0.3 pF 1.4 µsSOT-23P7
BAR 64-05 (Dual ) 200 100 600 Ω2 Ω0.3 pF 1,4 µsSOT-23 P7
BAR 64-06 (Dual ) 200 100 600 Ω2 Ω0.3 pF 1.4 µsSOT-23P7
BAR 64-07 (Dual ) 200 100 600 Ω2 Ω0.3 pF 1.4 µsSOT-143 P7
▼BAR 64 -02W 200 100 600 Ω2 0.3 pF 1.4 µs SCD-80 P7
BAR 64 -03W 200 100 600 Ω2 Ω0.3 pF 1.4 µsSOD-323 P7
▼BAR 64-04W (Dual) 200 100 600 Ω2 0.3 pF 1.4 µsSOT-323P7
▼BAR 64-05W (Dual) 200 100 600 Ω20. 3 pF 1,4 µsSOT-323 P7
▼BAR 64-06W (Dual) 200 100 600 Ω2 0.3 pF 1.4 µsSOT-323P7
▼BAR 65 -02W 30 100 6 Ω0.56 0. 6 pF 80 ns SCD-80 P3
BAR 65 -03W 30 100 6 Ω0.56 Ω0.6 pF 80 ns SOD-323 P3
BAR 65-07 30 100 6 Ω0.56 Ω0.6 pF 80 ns SOT-143 P3
▼ New typ e
Selection Guide
Semiconductor Group 27 1998-11-01
BAR 80 35 100 10 Ω0.4 Ω1.2 pF 120 ns MW-4 P1
BAR 81 30 100 6 Ω0.56 Ω0.6 pF 80 ns M W -4 P3
▼BAR 81W 30 100 6 Ω0.56 Ω 0.6 pF 80 ns SOT-343 P3
BAT 18 35 10 0 10 Ω0.4 Ω1.2 pF 120 ns SOT-23 P1
B AT 18-04 (Dual) 35 100 10 Ω0.4 Ω1.2 pF 120 ns SOT-23 P1
B AT 18-05 (Dual) 35 100 10 Ω0.4 Ω1.2 pF 120 ns SOT-23 P1
B AT 18-06 (Dual) 35 100 10 Ω0.4 Ω1.2 pF 120 ns SOT-23 P1
▼ New type
Electrostatic-Discharge-Protection Diode
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
V
IF
mA
rf
IF = 10 µA
f = 100 MH z
rf
IF = 10 mA
f = 100 MH z
CT
VR = 0 V
f = 100 MH z
τL
IF = 10 mA
IR = 6/3 mA
BAR 66 (Dual) 150 200 85 Ω0.95 Ω0.3 pF 700 ns SOT-23 –
PIN Diodes (General Purpose, Switching)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
V
IF
mA
rf
IF = 10 µA
f = 100 MHz
rf
IF = 10 mA
f = 100 MHz
CT
VR = 0 V
f = 100 MH z
τL
IF = 10 mA
IR = 6/3 mA
Selection Guide
Semiconductor Group 28 1998-11-01
PIN Diodes Characteristic Curves
The curve numbers refer to the chip codes in the preceding tables.
Forward Re sista n ce rf vs. Forward Current If
Selection Guide
Semiconductor Group 29 1998-11-01
AF-Schottky Diodes/RF-Schottky Diodes
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
VIF
mA CT
pF VF at
mV IF
mA VF at
mV IF
mA
BAS 40 40 120 3.2 310 1720 40 SOT-23 S9
BAS 40-04 (Dual) 40 120 3.2 310 1 720 40 SOT-23 S9
BAS 40-04W (Dual) 40 120 3.2 310 1720 40 SOT-323 S9
BAS 40-05 (Dual) 40 120 3.2 310 1 720 40 SOT-23 S9
BAS 40-05W (Dual) 40 120 3.2 310 1720 40 SOT-323 S9
BAS 40-06 (Dual) 40 120 3.2 310 1 720 40 SOT-23 S9
BAS 40-06W (Dual) 40 120 3.2 310 1720 40 SOT-323 S9
BAS 40-07 (Dual) 40 120 3.2 310 1 720 40 SOT-143 S9
▼BAS 40-07W (Dual) 40 120 3.2 310 1720 40 SOT-343 S9
BAS 70 70 70 1.5 380 1 690 10 SOT-23 S10
BAS 70-04 (Dual) 70 70 1.5 380 1690 10 SOT-23 S10
▼B AS 70-04S (Quad) 70 70 1.5 380 1 690 10 SOT-363 S10
BAS 70-04W (Dual) 70 70 1.5 380 1690 10 SOT-323 S10
BAS 70-05 (Dual) 70 70 1.5 380 1 690 10 SOT-23 S10
BAS 70-05W (Dual) 70 70 1.5 380 1690 10 SOT-323 S10
BAS 70-06 (Dual) 70 70 1.5 380 1 690 10 SOT-23 S10
▼BAS 70-06S (Quad) 70 70 1.5 380 1690 10 SOT-363 S10
B AS 70-06W (Dual) 70 70 1.5 380 1 690 10 SOT-323 S10
BAS 70-07 (Dual) 70 70 1.5 380 1690 10 SOT-143 S10
▼B AS 70-07W (Dual) 70 70 1.5 380 1 690 10 SOT-343 S10
BAS 125 25 100 0.95 385 1800 35 SOT-23 S11
B AS 125-04 (Dual) 25 100 0.95 385 1 800 35 SOT-23 S11
B AS 125-05 (Dual) 25 100 0.95 385 1800 35 SOT-23 S11
B AS 125-06 (Dual) 25 100 0.95 385 1 800 35 SOT-23 S11
B AS 125-07 (Dual) 25 100 0.95 385 1800 35 SOT-143 S11
B AS 125W 25 100 0.95 385 1 800 35 SOT-323 S11
B AS 125-04W (Dual) 25 100 0.95 385 1800 35 SOT-323 S11
B AS 125-05W (Dual) 25 100 0.95 385 1 800 35 SOT-323 S11
B AS 125-06W (Dual) 25 100 0.95 385 1800 35 SOT-323 S11
▼B AS 125-07W (Dual) 25 100 0.95 385 1 800 35 SOT-343 S11
B AS 140W 40 120 3.2 385 1800 35 SOD-323 S9
▼ New typ e
Selection Guide
Semiconductor Group 30 1998-11-01
B AS 170W 70 70 1.5 385 1800 35 SOD-323 S10
BAT 14-03W 4 90 0.22 430 1 550 10 SOD-323 S1
BAT 14-099 (Dual) 490 0.22 430 1550 10 SOT-143 S1
B AT 14-099R (Quad) – 90 0.38 400 1 480 10 SOT-143 S1
BAT 15-03W 4110 0.21 230 1320 10 SOD-323 S2
B AT 15-099 (Dual) 4 110 0.21 230 1 320 10 SOT-143 S2
B AT 15-099R (Quad) –110 0.37 230 1320 10 SOT-143 S2
BAT 17 4 130 0.55 340 1 425 10 SOT-23 S3
BAT 17W 4130 0.55 340 1425 10 SOT-323 S3
BAT 17-04 (Dual) 4 130 0.55 340 1 425 10 SOT-23 S3
BAT 17-04W (Dual) 4130 0.55 340 1425 10 SOT-323 S3
B AT 17-05W (Dual) 4 130 0.55 340 1 425 10 SOT-323 S3
BAT 17-06 (Dual) 4130 0.55 340 1425 10 SOT-23 S3
B AT 17-06W (Dual) 4 130 0.55 340 1 425 10 SOT-323 S3
BAT 17-07 (Dual) 4130 0.55 340 1425 10 SOT-143 S3
▼BAT 60A 10 3000 20 120 10 300 1000 SOD-323 –
▼BAT 60B 10 3000 20 240 10 400 1000 SOD-323 –
BAT 64 30 250 4.0 385 10 570 100 SOT-23 S6
BAT 64-04 (Dual) 30 250 4.0 385 10 570 100 SOT-23 S6
▼B AT 64-04W (Dual) 30 250 4.0 385 10 570 100 SOT-323 S6
BAT 64-05 (Dual) 30 250 4.0 385 10 570 100 SOT-23 S6
▼B AT 64-05W (Dual) 30 250 4.0 385 10 570 100 SOT-323 S6
BAT 64-06 (Dual) 30 250 4.0 385 10 570 100 SOT-23 S6
▼B AT 64-06W (Dual) 30 250 4.0 385 10 570 100 SOT-323 S6
BAT 64-07 (Dual) 30 250 4.0 385 10 570 100 SOT-143 S6
▼B AT 64-07W (Dual) 30 250 4.0 385 10 570 100 SOT-343 S6
BAT 66-05 (Dual) 40 2000 33.0 280 10 470 1000 SOT-223 –
BAT 68 8 130 0.75 320 1 395 10 SOT-23 S7
▼ New typ e
AF-Schottky Diodes/RF-Schottky Diodes (cont’d)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
VIF
mA CT
pF VF at
mV IF
mA VF at
mV IF
mA
Selection Guide
Semiconductor Group 31 1998-11-01
BAT 68W 8 130 0.75 320 1 395 10 SOT-323 S7
BAT 68-03W 8130 0.75 320 1395 10 SOD-323 S7
BAT 68-04 (Dual) 8 130 0.75 320 1 395 10 SOT-23 S7
BAT 68-04W (Dual) 8130 0.75 320 1395 10 SOT-323 S7
BAT 68-05 (Dual) 8 130 0.75 320 1 395 10 SOT-23 S7
BAT 68-05W (Dual) 8130 0.75 320 1395 10 SOT-323 S7
BAT 68-06 (Dual) 8 130 0.75 320 1 395 10 SOT-23 S7
BAT 68-06W (Dual) 8130 0.75 320 1395 10 SOT-323 S7
BAT 68-07 (Dual) 8 130 0.75 320 1 395 10 SOT-143 S7
▼BAT 68-07W (Dual) 8130 0.75 320 1395 10 SOT-343 S7
▼BAT 70-05 (Dual) 70 1500 48.8 260 10 520 1500 SOT-223 –
B AT 114-099 (Dual) 490 0.22 580 1680 10 SOT-143 S8
B AT 114-099R (Quad) – 90 0.22 580 1 680 10 SOT-143 S8
▼BAT 165 40 750 8.0 320 10 460 250 SOD-323 –
▼BAT 240A (Dual) 240 400 11.5 325 10 470 50 SOT-23 –
▼ New type
AF-Schottky Diodes/RF-Schottky Diodes (cont’d)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
VIF
mA CT
pF VF at
mV IF
mA VF at
mV IF
mA
Selection Guide
Semiconductor Group 32 1998-11-01
Schottky-Diodes Characteristic Curves
The curve numbers refer to the chip codes in the preceding tables.
Forward Current If vs. Forward Voltage Vf
Schottky Detector Diodes
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
VIF
mA CT at
pF VR
VVF at
VIF
mA RO at
kΩVF
VIR at
nA VR
V
BAT 62 40 20 0.4 00.53 2160 0≤ 10 40 SOT-143 S4
▼BAT 62-02W 40 20 0.4 0 580 2 225 0 ≤ 10 40 SCD-8 0 S4
BAT 62-03W 40 20 0.4 00.53 2160 0≤ 10 40 SOD-323 S4
▼
▼ New type
BAT 62-07W 40 20 0.4 0 580 2 225 0 ≤ 10 40 SOT-343 S4
BAT 63 3100 0.65 0.2 0.19 130 0≤ 10 3SOT-143 S5
Selection Guide
Semiconductor Group 33 1998-11-01
AF-Diodes
General Purpose, Switching and Rectifier Diodes
Type Maximum
Ratings Characteri stics (TA = 25 °C) Package
VR
VIF
mA VBR
VIR at
µAVR
VVF at
VIF
mA trr
ns
BAL 74 50 250 50 ≤ 0. 10 50 ≤ 1.00 100 ≤ 4.0 SOT-23
BAL 99 70 250 70 ≤ 2.50 70 ≤ 1.25 150 ≤ 6.0 SO T- 23
BAR 74 50 250 50 ≤ 0. 10 50 ≤ 1.00 100 ≤ 4.0 SOT-23
BAR 99 70 250 70 ≤ 2.50 70 ≤ 1.25 150 ≤ 6.0 SO T- 23
BAS 16 75 250 75 ≤ 1.00 75 ≤ 1.25 150 ≤ 6.0 SOT-23
▼BAS 16-02W 75 250 75 ≤ 1.00 75 ≤ 1.25 150 ≤ 6.0 SCD - 80
▼BAS 16-03W 75 250 75 ≤ 1. 00 75 ≤ 1.25 150 ≤ 6.0 SOD-323
BAS 16W 75 250 75 ≤ 1.00 75 ≤ 1.25 150 ≤ 6.0 SOT-323
BAS 19 100 250 120 ≤ 0.10 120 ≤ 1.25 200 ≤ 50.0 SOT-23
BAS 20 150 250 200 ≤ 0.10 20 0 ≤ 1.25 200 ≤ 50.0 SOT-23
BAS 21 200 250 250 ≤ 0.10 250 ≤ 1.25 200 ≤ 50.0 SOT-23
BAS 28 (Dual) 75 200 85 ≤ 1.00 75 ≤ 1. 25 150 ≤ 6.0 SO T- 143
▼BAS 28W (Dual) 75 200 85 ≤ 1.00 75 ≤ 1.25 150 ≤ 6.0 SOT-343
BAS 78A 50 1000 50 ≤ 1.00 50 ≤ 2.00 2000 1.0 µs SOT-223
BAS 78B 100 1000 100 ≤ 1. 00 100 ≤ 2.00 2000 1.0 µsSOT-223
BAS 78C 200 1000 200 ≤ 1. 00 20 0 ≤ 2.00 2000 1.0 µs SOT-223
BAS 78D 400 1000 400 ≤ 1. 00 400 ≤ 2.00 2000 1.0 µsSOT-223
BAS 79A (Dual) ≤ 50 1000 50 ≤ 1. 00 50 ≤ 2.00 2000 1.0 µs SOT-223
BAS 79B (Dual) 100 1000 100 ≤ 1.00 100 ≤ 2. 00 2000 1.0 µsSOT-223
BAS 79C (Dual) 200 1000 200 ≤ 1.00 20 0 ≤ 2.00 2000 1.0 µs SOT-223
BAS 79D (Dual) 400 1000 400 ≤ 1.00 400 ≤ 2. 00 2000 1.0 µsSOT-223
BAV 70 (D ual) 70 200 70 ≤ 2. 50 70 ≤ 1.25 150 ≤ 6.0 SOT-23
BAV 70W (Dual) 70 200 70 ≤ 2.50 70 ≤ 1.25 150 ≤ 6.0 SOT- 323
BAV 74 (D ual) 50 200 50 ≤ 0. 10 50 ≤ 1.00 100 ≤ 4.0 SOT-23
BAV 99 (Dual) 70 200 70 ≤ 2.50 70 ≤ 1.25 150 ≤ 6.0 SOT- 23
BAV 99W (Dual) 70 200 70 ≤ 2.50 70 ≤ 1.25 1 50 ≤ 6.0 SOT-323
BAW 56 (Dual) 70 200 70 ≤ 2.50 70 ≤ 1.25 150 ≤ 6.0 SOT-23
BAW 56W (Dual) 70 200 70 ≤ 2.50 7 0 ≤ 1. 25 150 ≤ 6.0 SOT-323
BAW 78A 50 1000 50 ≤ 1.00 50 ≤ 2.00 2000 1.0 µsSOT-89
BAW 78B 100 1000 100 ≤ 1.00 100 ≤ 2.00 2000 1 .0 µsSOT-89
BAW 78C 200 1000 200 ≤ 1.00 200 ≤ 2.00 2000 1.0 µsSOT-89
BAW 78D 400 1000 400 ≤ 1.00 400 ≤ 2.00 2000 1 .0 µsSOT-89
▼ New typ e
Selection Guide
Semiconductor Group 34 1998-11-01
▼BAW 78M 400 1000 400 ≤ 1. 00 40 0 ≤ 2.00 2000 1.0 µsSCT-595
BAW 79A (Dual) 50 1000 50 ≤ 1.00 50 ≤ 2.00 2000 1.0 µsSOT-89
BAW 79B (Dual ) 100 1000 100 ≤ 1.00 10 0 ≤ 2.00 2000 1.0 µsSOT-89
BAW 79C (Dual) 200 1000 200 ≤ 1.00 200 ≤ 2.00 2000 1.0 µsSOT-89
BAW 79D (Dual ) 400 1000 400 ≤ 1.00 40 0 ≤ 2.00 2000 1.0 µsSOT-89
BAW 100 (Dual) 75 200 70 ≤ 2.50 70 ≤ 1.25 150 ≤ 6.0 SOT-143
BAW 101 (Dual) 300 250 300 ≤ 0.15 250 ≤ 1.30 1 00 1.0 µs SOT-143
SMBD 914 70 200 100 ≤ 5.00 75 ≤ 1.00 100 ≤ 4.0 SOT-23
SMBD 2835 (Dual) 30 200 75 ≤ 0.10 30 ≤ 1.20 100 ≤ 6.0 SOT-23
SMBD 2836 (Dual) 50 200 75 ≤ 0.10 50 ≤ 1.20 100 ≤ 6.0 SOT-23
SMBD 2837 (Dual) 30 200 75 ≤ 0.10 30 ≤ 1.20 100 ≤ 6.0 SOT-23
SMBD 2838 (Dual) 50 200 75 ≤ 0.10 50 ≤ 1.20 100 ≤ 6.0 SOT-23
SMBD 6050 70 250 70 ≤ 0.10 50 ≤ 1.10 100 ≤ 10.0 SOT-23
SMBD 6100 (Dual) 70 200 70 ≤ 0.10 50 ≤ 1.10 100 ≤ 15.0 SOT-23
SMBD 7000 (Dual) 100 200 100 ≤ 0. 50 100 ≤ 1.10 100 ≤ 15.0 SOT-23
▼ New type
Diode Arrays
▼BAS 16S (Triple) 75 250 75 ≤ 1. 00 75 ≤ 1.25 150 ≤ 6.0 SOT-363
BAV 70 S (Quad) 70 200 ≤ 1.5 ≤ 2.5 70 ≤ 1.25 150 ≤ 6.0 SOT-363
▼BAV 99S (Quad) 70 200 70 ≤ 2.50 70 ≤ 1.25 150 ≤ 6.0 SOT-363
▼BAW 56S (Quad) 70 200 70 ≤ 2. 50 70 ≤ 1. 25 150 ≤ 6.0 SOT-3 63
▼ New typ e
Low Leakage Diodes
BAS 116 75 250 75 ≤ 5 (nA ) 75 ≤ 1.25 150 ≤ 3.0 µsSOT-23
BAW 156 (Dual ) 70 200 70 ≤ 5 (nA) 70 ≤ 1.25 150 ≤ 3.0 µsSOT-23
BAV 170 (Dual) 70 200 70 ≤ 5 ( nA) 70 ≤ 1.25 150 ≤ 3.0 µsSOT-23
BAV 199 (Dual) 70 200 70 ≤ 5 (nA) 70 ≤ 1.25 150 ≤ 3.0 µsSOT-23
Bridge Rectifier
BGX 50A (Bridge) 50 140 50 ≤ 0.20 50 ≤ 2.60 100 ≤ 6.0SOT-143
AF-Diodes
General Purpose, Switching and Rectifier Diodes (cont’d)
Type Maximum
Ratings Characteri stics (TA = 25 °C) Package
VR
VIF
mA VBR
VIR at
µAVR
VVF at
VIF
mA trr
ns
Selection Guide
Semiconductor Group 35 1998-11-01
For complete information and data sheets please contact us on our internet homepage
http://www.siemens.de/semiconductor/products/35/35.htm
Leaded Components
Varactor Diodes (leaded)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package
VR
VIF
mA CT at
pF VR
VCT at
pF VR
VCRatio IRat
nA VR
V
■BB 112 12 50 440 - 520 116.50 - 29.00 8.5 ≥ 18.00 50 10 TO-92a
■■ Not for new design
BB 304 32 50 42 - 47.5 2 25.00 8.0 1.65 - 1.75 20 30 TO-92b
Transistors (leaded)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package
VCE0
VIC
mA Ptot
mW fT
MHz ICB0 at
nA VCB0
VhFE at IC
mA VCE
VVCEsat at
VIC
mA IB
mA
High-Voltage Transistors
■BF 420 N300 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 –TO-92d
■BF 421 P 300 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 – TO-92d
■BF 422 N250 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 –TO-92d
■BF 423 P 250 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 – TO-92d
■BFP 22 N200 200 625 70 ≤ 100 160 ≥ 50 30 10 ≤ 0.5 20 2TO-92c
■BFP 23 P 200 200 625 70 ≤ 100 160 ≥ 50 30 10 ≤ 0.4 20 2 TO-92c
■BFP 25 N300 200 625 70 ≤ 100 250 ≥ 40 30 10 ≤ 0.4 20 2TO-92c
■BFP 26 P 300 200 625 70 ≤ 100 250 ≥ 40 30 10 ≤ 0.5 20 2 TO-92c
■MPSA 42 N300 500 625 70 100 200 ≥ 40 30 10 ≤ 0. 5 20 2TO-92c
■MPSA 43 N 200 500 625 70 100 160 ≥ 40 30 10 ≤ 0.4 20 2 TO-92c
■MPSA 92 P300 500 625 70 100 200 ≥ 25 30 10 ≤ 0. 5 20 2TO-92c
■MPSA 93 P 200 500 625 70 100 160 ≥ 30 30 10 ≤ 0.4 20 2 TO-92c
■ Not for new design
Selection Guide
Semiconductor Group 36 1998-11-01
■ Not for new design
■ Not for new design
Darlington Transistors
■BC 516 P30 500 625 200 ≤ 100 30 ≥ 30000 20 2≤ 1.0 100 0.1 TO-92d
■BC 517 N 30 500 625 150 ≤ 100 30 ≥ 30000 20 2 ≤ 1.0 100 0.1 TO-92d
■BC 617 N40 500 625 150 ≤ 100 40 ≥ 20000 200 5≤ 1.1 200 0.2 TO-92d
■BC 618 N 55 500 625 150 ≤ 100 60 ≥ 10000 200 5 ≤ 1.1 200 0.2 TO-92d
■BC 875 N45 1000 800 150 ≤ 100 60 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 876 P 45 1000 800 150 ≤ 100 60 ≥ 20 00 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 877 N60 1000 800 150 ≤ 100 80 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 878 P 60 1000 800 150 ≤ 100 80 ≥ 20 00 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 879 N80 1000 800 150 ≤ 100 90 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 880 P 80 1000 800 150 ≤ 100 90 ≥ 20 00 500 10 ≤ 1.3 500 0.5 T O-92d
RF-Transistors
Type
N = NPN
P = PNP
Maximum Ratings Char acteristics (TA = 25 °C) Package
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz GPC
dB IC
mA VCE
Vf
MHz
■BF 414 P30 25 300 0.56 3.0 510 100 – – – – TO-92d
■BF 506 P 35 30 300 0.55 3.0 2 10 200 – – – – TO-92d
■BF 959 N20 100 500 1.10 4.0 20 10 200 – – – – TO-92d
Transistors (leaded) (cont’d)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package
VCE0
VIC
mA Ptot
mW fT
MHz ICB0 at
nA VCB0
VhFE at IC
mA VCE
VVCEsat at
VIC
mA IB
mA
Selection Guide
Semiconductor Group 37 1998-11-01
For complete information and data sheets please contact us on our internet homepage
http://www.siemens.de/semiconductor/products/35/35.htm
■Not for new design
* Available in
hFE subgroups.
General Purpose and Switching Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCB0
VIC
mA Ptot
mW fT
MHz ICB0 at
nA VCB0
VhFE at IC
mA VCE
VVCEsat at
VIC
mA IB
mA
■BC 327 P50 800 625 200 ≤ 100 45 100 … 630* 100 1≤ 0.70 500 50.0 TO-92d
■BC 328 P 30 800 625 200 ≤ 100 25 100 … 630* 100 1 ≤ 0.70 500 50.0 TO-92d
■BC 337 N50 800 625 170 ≤ 100 45 100 … 630* 100 1≤ 0.70 500 50.0 TO-92d
■BC 338 N 30 800 625 170 ≤ 100 25 100 … 630* 100 1 ≤ 0.70 500 5 0. 0 TO-92d
■BC 368 N25 1000 800 100 ≤ 100 25 85 … 375 500 1≤ 0.50 1000 100.0 TO-92d
■BC 369 P 25 1000 800 100 ≤ 100 25 85 … 375 500 1 ≤ 0.50 100 0 100.0 TO-92 d
■BC 635 N45 1000 800 100 ≤ 100 30 40 … 250 150 2≤ 0.50 500 50.0 TO-92d
■BC 636 P 45 1000 800 100 ≤ 100 30 40 … 250 150 2 ≤ 0.50 500 50.0 TO-92 d
■BC 637 N60 1000 800 100 ≤ 100 30 40 … 160 150 2≤ 0.50 500 50.0 TO-92d
■BC 638 P 60 1000 800 100 ≤ 100 30 40 … 160 150 2 ≤ 0.50 500 50.0 TO-92 d
■BC 639 N100 1000 800 100 ≤ 100 30 40 … 160 150 2≤ 0. 50 500 50.0 TO-92d
■BC 640 P 100 1000 800 100 ≤ 100 30 40 … 160 150 2 ≤ 0.50 500 5 0. 0 TO-92d
■BCX 12 N125 800 625 100 100 100 63 100 1≤ 1.00 500 50.0 TO-92d
■BCX 13 P 125 800 625 120 100 100 63 100 1 ≤ 1.00 500 5 0. 0 TO-92d
■BCX 58 N32 100 500 200 ≤ 20 32 120 … 63 0* 2 5 ≤ 0.50 100 2.50 TO-92d
■BCX 59 N 45 100 500 200 ≤ 20 45 120 … 630* 2 5 ≤ 0.50 100 2.50 TO -92d
■BCX 78 P32 100 500 250 ≤ 20 32 120 … 63 0* 2 5 ≤ 0.60 100 2.50 TO-92d
■BCX 79 P 45 100 500 250 ≤ 20 45 120 … 63 0* 2 5 ≤ 0.60 100 2.50 TO-92d
