MOTOROLA = SEMICONDUCTOR ex = TECHNICAL DATA MRF422 MRF422MP | The RF Line | 150 W(PEP} 30 MHz 2 RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . designed primarily for applications as a high-power linear ampli- fier from 2.0 to 30 MHz. @ Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W(PEP) Minimum Gain = 10 dB Efficiency = 40% @ Intermodulation Distortion @ 150 W(PEP) IMD = ~30 dB (Min) 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR SSYLE 1 PIN | EMITTER 2 BASE 3 EMITTER 4 COLLECTOR MAXIMUM RATINGS Rating Symbot Value Unit Collector-Emitter Voltage Vceo 40 Vide Collector-Bass Voltage Vceo as Vde Emitter-Base Voltage VEBO 3.0 Vdc ft Collector Current Continuous le 2 Adc Cc SEATING Withstanding Current 10s - 30 Adc T PLANE Total Device Dissipation @ Tc = 25C PD 290 Watts Derate above 25C 1.66 w/c NOTES 1 DIMENSIONING ANC TOLERANCING PER Storage Temperature Range Tstg ~65 to +150 C ANSI 14 5M 1982 2 CONTROLLING DIMENSION INCH MRF422MP is for ordering a HFE matched pair. | MILLIMETERS , wens ' om | MIN Tomax | omy | Max | A | 2433 2514 | 0360 | 0990 | i) | r1a2 | 1295 | 0465 | 6810 | c ] $82 | 698 1 0229 | 0275 | fo 549 $36 | 0216 0235 | THERMAL CHARACTERISTICS |e | awl 275) oo | one , H | 166) 452 ove 0178 | Characteristic Symbot Max Unit | 3 * 008] 917 ] 0003 * coo | K [106 | - | 0435 Thermal Resistance, Junction to Case Resc 0.6 cw a | 45 NOM 45 NOM | j O | 293 1 330 ton 0130 rR | 625 | 64? , o246 | 0255 u | 1928 | 1964 [ 0770 | 0730 | CASE 211-11 en MOTOROLA RF DEVICE DATA 2-616MRF422, MRF422MP ELECTRICAL CHARACTERISTICS (T = 25C uniess otherwise noted.) Characteristic | symbot | Min Tye =| Mex [Unit OFF CHARACTERISTICS Collector-Emitter Braakdown Voltage ViIBRICEO 35 - - Vde (tg = 200 mAdc, Ig = 0) Collector-Emitter Breakdown Voltage VIBRICES 85 - - Vde (Ig = 100 mAdc, Vee = 0) Collector-Base Breakdown Valtage ViBR)ICBO as - ~ Vde lg = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage ViBRIEBO 3.0 - - Vde (Ig = 10 mAde, ic = 0) Collector Cutoff Current Ices - - 20 mAdc (Veg = 28 Vdc, Vege = 0, Te = 25C) ON CHARACTERISTICS DC Current Gain hee 10 30 - - {lo = 6.0 Ade, Veg = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance Cob ~ 420 - pF (Vop = 28 Vde, tg = 0, f = 1.0 MHz) FUNCTIONAL TESTS Comman-Emitter Amplifiar Power Gain Gpe 10 13 - d8 (Vee = 28 Vde, Pour = 150 WIPEP), Icimax) = 6.7 Adc, lcq = 150 mAdc, f = 30, 30.001 MHz} Coliector Efficiency nN ~ 45 - % (Voc = 28 Vde, Pout = 150 WIPEP), tcimax) = 6-7 Adc, icq = 159 mAdc, f = 30, 30.001 MHz) Intermodulation Distortion {1} IMD ~_ -33 -30 dB (Vege = 28 Vdc, Pout = 150 Watts(PEP), ic = 6.7 Adc, Icq = 150 mAdc, f = 30, 30.001 MHz) Output Power Pout 180 - - Watts PEP {Vee = 28 Vdc, f= 30 MHz) (4) To Mil-Std-1311 Version A, Test Method 2204, Two Tone, Reference each Tone. FIGURE 1 - 30 MHz TEST CIRCUIT SCHEMATIC Ri + ow K+ Bias cry. z =C11 28 Vde _y _f ? for C1,2,3,5 170-680 pF, ARCO 469 L1 3 Turns, #16 Wire, 5/16" |.D., 5/16" Long Cc 80-480 pF, ARCO 466 L2 10 4H Molded Choke C6,8,11 ERIE 0.1 uF, 100 V L3 12 Turns, #16 Enamaled Wire, Close Wound, c MALLORY 500 uF, 15 V 14 Dia. Electrolytic L4 5 turns, 1/8 Copper Tubing cs UNDERWOOD 1000 pF, 350 V -L5 10 Ferrite Beads FERROXCUBE #56-590-65/ c10 10 pF, 50 V Electrolytic 38 R1 10 1, 25 Watt Wire Wound R2 10 9, 1 Watt Carbon CR1 1N4997 MOTOROLA RF DEVICE DATA 2-617MRF422, MRF422MP FIGURE 2 ~- OUTPUT POWER versus INPUT POWER FIGURE 3 POWER GAIN versus FREQUENCY 280 ~ =< 240 Vee = 28V Ig = 180 mA wo TWO TONE TEST f 200 f= 30,30.001 MHz a < = = z = 160 < w o 2 & = 120 z > a 5 80 # Veco = 28V 3 Icq= 150 mA a 40 Pour = 150 W PEP a Q 0 20 40 6.0 a0 (0 12 14 1 20 30 6.0 70 10 15 20 30 Pin, INPUT POWER {WATTS PEP} f, FREQUENCY (MHz) FIGURE 4 LINEAR OUTPUT POWER FIGURE 5S INTERMODULATION DISTORTION versus SUPPLY VOLTAGE versus OUTPUT POWER 280 a TT - a -= o 240 IMD = 3048 Veco 28V | - Ica = 25 mA icq > 150 mA | f= 30, 30,001 MHz {- 30, 30001 MHz | | 3rd ORDER 200 160 120 BG Pout, OUTPUT POWER (WATTS PEP) Sth ORDER IMO, INTERMODULATION DISTORTION (dB) 40 46 20 24 28 2 40 bo 120 160 200 Voc. SUPPLY VOLTAGE (VOLTS) Pout. OUTPUT POWER (WATTS PEP) FIGURE 6 DC SAFE OPERATING AREA FIGURE 7 SERIES INPUT IMPEDANCE Te = 250C WomA Ls! Ito . , 150 W PEP Pout Nanogma: Wneisstec pee Ic, COLLECTOR CURRENT (AMP) , wo Vom gD 2.0 5.0 iT} 20 50 Vee. COLLECTOA-EMITTER VOLTAGE (VOLTS) 4.90 -j1.54 MOTOROLA RF DEVICE DATA 2-618MRF422, MRF422MP FIGURE 9 OUTPUT CAPACITANCE FIGURE 6 OUTPUT RESISTANCE versus FREQUENCY versus FREQUENCY 6.0 > a a w = a = x a ALLEL EQUIVALENT OUTPUT = o RESISTANCE {OHMS} Voc = 28V teg = 160 mA Pout = 150 W PEP Voc =2aV Ig = 150 mA Pout = 150 W PEP Cout. PARALLEL EQUIVALENT QUTPUT CAPACITANCE (pF) . o Rout. PAR S 0 5 20 3.0 5.0 70 10 30 15 2.0 4.0 $.0 7.0 10 1 20 30 1, FREQUENCY (MHz) t, FREQUENCY (MH2} MOTOROLA RF DEVICE DATA 2-619