PAO S ReMOS [F This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features e Polysilicon gate Improved stability and reliability No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling FIELD EFFECT POWER TRANSISTOR =P IRFD112,113 0.8 AMPERES 100, 60 VOLTS RDS(ON) = 9.8 2 N-CHANNEL (a 4 CASE STYLE 4-PIN DIP DIMENSIONS ARE IN INCHES AND (MILLIMETERS) [] source P) cate pAAIN | [] le~0.248 (6.22) 4 0.198 be (5.03) | MAX, 0.120 , } (3.04) ons (3.81) 0.040) (1.02) b- 0.13 (3.30) 0.02% (0.56) es ee 0.15 (3.81) maximum ratings (Ta, = 25C) (unless otherwise specified) RATING SYMBOL IRFD112 IRFD113 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Ras = 1MO VpoGrR 100 60 Voits Continuous Drain Current g Ta= 26C Ip 0.80 0.80 A Ta = 100C" 0.54 0.54 A Pulsed Drain Current IDM 6.4 6.4 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Ta = 25C Pp 1.2 1.2 Watts Derate Above 25C 9.6 9.6 mW/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Ambient" Raa 105 105 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 300 300 C (1) Device mounted to vertical pc board in free air with drain lead soldered to 0.20 in? minimum copper run area. (2) Repetitive Rating: Pulse width limited by max. junction temperature. 235electrical characteristics (T, = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL| MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRFD112 BVpss 100 _ _ Volts (Vas = OV, Ip = 250 A) IRFD113 60 _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, V@g = OV, Ta = 25C) _ _ 250 LA (Vps = Max Rating, x 0.8, Vag = OV, Ta = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage Ta = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas, !p = 250 nA) On-State Drain Current \ 0.8 _ _ A (Veg = 10V, Vps = 10V) D(ON) , Static Drain-Source On-State Resistance (Vag = 10V, Ip = 0.8A) Rpos(on) 0.60 0.80 Ohms Forward Transconductance (Vpg = 10V, Ip = 0.8A) - Ofs 0.56 0.75 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 145 200 pF Output Capacitance Vps = 25V Coss _ 65 100 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 20 25 pF switching characteristics Turn-on Delay Time Vps = 30V ta(on) _ 15 _ ns Rise Time Ip = 0.8A, Veg = 15V tr _ 15 _ ns Turn-off Delay Time RGen = 509, Res = 12.50 taroff) _ 30 _ ns Fatt Time (Res (EQutv.) = 100) tf _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 0.8 A Pulsed Source Current Isom _ _ 6.4 A Diode Forward Voltage _ (Ta = 25C, Vgs = OV, Ig = 0.8A) Vsp 0.8 2.0 Volts Reverse Recovery Time ter _ 90 ns (Ig = 1.0A, dig/dt = 100A/ps, Ta = 125C) Qrr _ 0.2 _ uC *Pulse Test: Pulse width < 300 ys, duty cycle < 2% 10 25ys 100s tms 10ms 100ms Ip, DRAIN CURRENT (AMPERES) OPERATION IN THIS AREA MAY BE LIMITED BY Rogigny ' SINGLE PULSE Ty=25C oc OT O41 1.0 10.0 Vig. DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA CONDITIONS: Rpg(oN) CONDITIONS: Ip = 0.8 A, Vg = 10V Vas(tH) CONDITIONS: Ip = 250A, Vos = Vas Roston) AND Vesiriy NORMALIZED IRFD112 IRFD113 -40 Oo 40 80 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion, AND Vositu) VS- TEMP. 120 160 236