EE EEE EEE T-l-O7 MOTOROLA MMBZ5226B = SEMICONDUCTOR oxy thru = TECHNICAL DATA MMBZ5257B CASE 318-05, STYLE 8 THERMAL CHARACTERISTICS AA Characteristic Symbol Max Unit SOT-23 (TO-236. AB) Total Device Dissipation FR-5 Board,* Pp 225 mW Ta = 25C Derate above 25C 1.8 mwrc x 3 Thermal Resistance Junction to Ambient Raja 556 CimW 1 ie Total Device Dissipation Pp 300 mw 2 Alumina Substrate,** Ta = 26C Derate above 25C 2.4 mWwrc Th Resi Junction to Ambi 3 ' ermal unction to Ambient Raa 417 CimWw Cathode Anode Junction and Storage Temperature Ty. Tstg 150 C *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ZENER DIODES Pinout: 1-Anode, 2-NC, 3-Cathode (Vg = 0.9 V Max @ Ip = 10 mA for all types.) Test Zener 22T Current Voltage 2ZK \z =lzT Max \27 Vz (5%) lz = 0.25 mA | @ 10% Mod la @ Va Device Marking mA Nominal 2 Max 2 Max pA Vv MM8Z5226B 8A 20 3.3 1600 28 25 1.0 MMBZ5227B 8B 20 3.6 1700 24 15 1.0 MMBZ5228B 8c 20 3.9 1900 23 10 1.0 MMBZ5229B8 aD 20 43 2000 22 5.0 1.0 MMBZ52308 8E 20 47 1900 19 5.0 2.0 MM8Z5231B 8F 20 5.1 1600 17 5.0 2.0 MMBZ5232B 8G 20 5.6 1600 11 5.0 3.0 MMB8Z5233B 8H 20 6.0 1600 7.0 5.0 3.5 MMB8Z5234B 8J 20 6.2 1000 7.0 5.0 4.0 MM8Z5235B 8K 20 68 750 5.0 3.0 5.0 MMBZ5236B 8b 20 75 500 6.0 3.0 6.0 MMBZ5237B 8M 20 8.2 500 8.0 3.0 6.5 MM8Z5238B 8N 20 8.7 600 8.0 3.0 6.5 MMBZ52398 8P 20 9.1 600 10 3.0 7.0 MMBZ5240B 80 20 10 600 W7 3.0 8.0 MMBZ5241B 8R 20 11 600 22 2.0 8.4 MMBz52428 8S 20 12 600 30 1.0 9.1 MMBZ5243B 8T 3.5 13 600 13 0.5 9.9 MMBZ5244B 8uU 9.0 14 600 16 0.1 10 MMBZ5245B 8V 8.5 15 600 16 0.1 11 MMBZ5246B Sw 7.8 16 600 17 0.1 12 MMB8Z5247B 8X 74 17 600 19 0.1 13 MM8Z5248B 8Y 7.0 18 600 21 0.1 14 MMBZ5249B 8Z 6.6 19 600 23 0.1 14 MMBZ5250B 81A 6.2 20 600 25 0.1 15 MMBZ52518 81B 5.6 22 600 29 0.1 17 MM8Z5252B 81C 6.2 24 600 33 0.1 18 MMBZ5253B 81D 5.0 25 600 35 0.1 19 MMBZ5254B 81E 4.6 27 600 41 0.1 21 MMBZ5255B 8iF 45 28 600 44 0.1 21 MMBZ5256B 81G 4.2 30 600 ag 0.1 23 MMBZ5257B 81H 3.8 33 700 58 0.1 25 4-98