BDX53C - STMICROELECTRONICS - Datasheet.Support

October 2007 Rev 4 1/7

Features

■Good hFE linearity

■High fT frequency

■Monolithic Darlington configuration with

integrated antiparallel collector-emitter diode

Application

■Audio amplifiers

■Linear and switching industrial equipment

Description

The devices are manufactured in planar base

island technology with monolithic Darlington

configuration. Figure 1. Internal schematic diagram

TO-220

123

R1 typ.= 10 kΩR2 typ.= 150 Ω

Table 1. Device summary

Order code Marking Package Packaging

BDX53B BDX53B

TO-220 Tube

BDX53C BDX53C

BDX54B BDX54B

BDX54C BDX54C

BDX53B - BDX53C

BDX54B - BDX54C

Complementary power Darlington transistors

www.st.com

2/7

Electrical ratings BDX53B - BDX53C - BDX54B - BDX54C

1 Electrical ratings

Note: For PNP types voltage and current values are negative.

Table 2. Absolute maximum ratings

Symbol Parameter

Value

UnitNPN BDX53B BDX53C

PNP BDX54B BDX54C

VCBO Collector-base voltage (IE = 0) 80 100 V

VCEO Collector-emitter voltage (IB = 0) 80 100 V

VEBO Emitter-base voltage (IC = 0) 5 V

ICCollector current 8 A

ICM Collector peak current (repetitive) 12 A

IBBase current 0.2 mA

PTOT Total dissipation at Tc = 25°C 60 W

Tstg Storage temperature -65 to 150 °C

TJMax. operating junction temperature 150 °C

BDX53B - BDX53C - BDX54B - BDX54C Electrical characteristics

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2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Note: For PNP types voltage and current values are negative.

Table 3. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

VCEO(sus)(1)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Collector-emitter

sustaining voltage (IB = 0)

IC = 100 mA

for BDX53B - BDX54B

for BDX53C - BDX54C

100

ICBO

Collector cut-off current

(IE = 0)

VCB = 80 V

for BDX53B - BDX54B 0.2 mA

VCB = 100 V

for BDX53C - BDX54C 0.2 mA

ICEO

Collector cut-off current

(IB = 0)

VCE = 40 V

for BDX53B - BDX54B 0.5 mA

VCE = 50 V

for BDX53C - BDX54C 0.5 mA

IEBO

Emitter cut-off current

(IC = 0) VEB = 5 V 2mA

VCE(sat)(1) Collector-emitter saturation

voltage IC = 3 A; IB = 12 mA 2V

VBE(sat)(1) Base-emitter saturation

voltage IC = 3 A; IB = 12 mA 2.5 V

hFE(1) DC current gain IC = 3 A; VCE = 3 V 750

VF(1) Diode forward voltage IF = 3 A;

IF = 8 A;

1.8

2.5

2.5 V

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Package mechanical data BDX53B - BDX53C - BDX54B - BDX54C

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com

BDX53B - BDX53C - BDX54B - BDX54C Package mechanical data

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TO-220 mechanical data

Dim mm inch

Min Typ Max Min Typ Max

A 4.40 4.60 0.1730.181

b0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c0.490.70 0.0190.027

D 15.25 15.75 0.6 0.62

D1 1.27 0.050

E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F1.231.32 0.0480.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L1314 0.511 0.551

L1 3.50 3.93 0.137 0.154

L20 16.40 0.645

L3028.90 1.137

∅P3.75 3.85 0.147 0.151

Q2.65 2.95 0.104 0.116

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Revision history BDX53B - BDX53C - BDX54B - BDX54C

4 Revision history

Table 4. Document revision history

Date Revision Changes

09-Sep-2004 3

23-Oct-2007 4 Technology change from epibase to planar (PCN APM-

PWR/07/2417 and APM-PWR/07/2615)

BDX53B - BDX53C - BDX54B - BDX54C Revision history

7/7

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