November 2006
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
©2006 Fairchild Semiconductor Corporation
FDFS2P753Z Rev.A
www.fairchildsemi.com
1
FDFS2P753Z
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
-30V, -3A, 115m
Features
Max rDS(on) = 115m at VGS = -10V, ID = -3.0A
Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A
VF < 500mV @ 1A
VF < 580mV @ 2A
Schottky and MOSFET incorporated into single power surface
mount SO-8 package
Electrically independent Schottky and MOSFET pinout for
design flexibility
RoHS Compliant
General Description
The FDFS2P753Z combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
Application
DC - DC Conversion
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
ID
Drain Current -Continuous (Note 1a) -3 A
-Pulsed -16
PDPower Dissipation (Note 1a) 1.6 W
EAS Single Pulse Avalanche Energy (Note 2) 6 mJ
VRRM Schotty Repetitive Peak Reverse Voltage -20 V
IOSchotty Average Forward Current (Note 1a) -2 A
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction to Case (Note 1) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDFS2P753Z FDFS2P753Z SO-8 330mm 12mm 2500 units
A
A
S
G
C
C
DD
Pin 1
SO-8
1
5
6
7
8
4
3
2
A
A
C
C
D
DG
S
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFS2P753Z Rev.A www.fairchildsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient ID = -250µA, referenced to 25°C -21 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -24V, -1 µA
VGS = 0V TJ = 125°C -100
IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA-1 -2.1 -3 V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250µA, referenced to 25°C 5 mV/°C
rDS(on) Drain to Source On-Resistance
VGS = -10V, ID = -3.0A 69 115
m
VGS = -4.5V, ID = -1.5A 115 180
VGS = -10V, ID = -3.0A, TJ =
125°C 97 162
gFS Forward Transconductance VDS = -5V, ID = -3.0A 6S
Dynamic Characteristics
Ciss Input Capacitance VDS = -10V, VGS = 0V,
f = 1MHz
340 455 pF
Coss Output Capacitance 80 110 pF
Crss Reverse Transfer Capacitance 65 100 pF
RgGate Resistance f = 1MHz 18
Switching Characteristics
td(on) Turn-On Delay Time
VDD = -10V, ID = -3.0A
VGS = -10V, RGEN = 6
7 14 ns
trRise Time 31 50 ns
td(off) Turn-Off Delay Time 18 33 ns
tfFall Time 20 35 ns
Qg(TOT) Total Gate Charge at -10V VGS = 0V to -10V
VDD = -10V
ID = -3.0A
6.6 9.3 nC
Qg(4.5) Total Gate Charge at -4.5V VGS = 0V to -4.5V 3.3 4.6 nC
Qgs Gate to Source Gate Charge 1.3 nC
Qgd Gate to Drain “Miller” Charge 1.6 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.0A (Note 3) -0.9 -1.2 V
trr Reverse Recovery Time IF = -3.0A, di/dt = 100A/µs 20 30 ns
Qrr Reverse Recovery Charge 14 21 nC
Schottky Diode Characteristics
IRReverse Leakage VF = 20V TJ = 25°C 190 µA
TJ = 125°C 66 mA
VFForward Voltage
IF = 1A TJ = 25°C 0.5
V
TJ = 125°C 0.39
IF = 2A TJ = 25°C 0.58
TJ = 125°C 0.53
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFS2P753Z Rev.A www.fairchildsemi.com
3
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
2: Starting TJ = 25oC, L = 3mH, IAS = 2A, VDD = 27V, VGS = 10V
3: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
b) 135°C/W when
mounted on a
minimun pad
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFS2P753Z Rev.A www.fairchildsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
012345
0
4
8
12
16
VGS = -4V
VGS = -10V
VGS = -3.5V
VGS = -4.5V
VGS = -5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0481216
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS = 3.5V
VGS = -10V
VGS = -4.5V
VGS = -5V
VGS = 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -3A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
345678910
50
100
150
200
250
300
350
400
450
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
TJ = 25oC
ID = -3A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m)
-VGS, GATE TO SOURCE VOLTAGE (V)
O n -R es i s t an ce v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
123456
0
4
8
12
16
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
1E-3
0.01
0.1
1
10
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
20
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFS2P753Z Rev.A www.fairchildsemi.com
5
Figure 7.
02468
0
2
4
6
8
10
VDD = -15V
VDD = -5V
-VGS, GATE TO SOURCE VOLTAGE(V)
-Qg, GATE CHARGE(nC)
VDD = -10V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
20
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
800
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1
1
2
3
4
TJ = 25oC
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
-IAS, AVALANCHE CURRENT(A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
RθJA = 78oC/W
VGS = -4.5V
VGS = -10V
-ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (oC)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Fig u r e 11. For w a r d B i as S afe
Operating Area
0.1 1 10
0.01
0.1
1
10
80
1s
DC
10s
100ms
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TA = 25OC
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
30
Figure 12.
10-4 10-3 10-2 10-1 100101102103
1
10
100 VGS = -10V
SINGLE PULSE
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
0.6
200
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 TA
125
------------------------
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFS2P753Z Rev.A www.fairchildsemi.com
6
Figure 13.
0.0 0.4 0.8 1.2 1.6 2.0
1E-3
0.01
0.1
1
10
TJ = 125oC
TJ = 25oC
IF, REVERSE LEAKAGE CURRENT (A)
VF, REVERSE VOLTAGE (V)
30
Schottky Diode Forward Voltage Figure 14.
0 5 10 15 20
1E-3
0.01
0.1
1
10
TJ = 125oC
TJ = 25oC
VR, REVERSE VOLTAGE (V)
IR, REVERSE LEAKAGE CURRENT (mA)
Schottky Diode Reverse Current
Figure 15. Transient Thermal Response Curve
10-4 10-3 10-2 10-1 100101102103
0.01
0.1
1DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
0.005
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
Rev. I21
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Advance Information Formative or In Design This datasheet contain s t he design specifications for
product development. Specifications may change in
any manner without n otice.
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supplementary data will be published at a later date.
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changes at any time without notice to improve
design.
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Semiconductor reserves the right to make changes at
any time without notice to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is print ed for reference informati on only.