FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode -30V, -3A, 115m Features General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A VF < 500mV @ 1A VF < 580mV @ 2A This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Application RoHS Compliant DC - DC Conversion D D C 5 4 G D 6 3 S C 7 2 A C 8 1 A D C SO-8 S A Pin 1 G A MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Ratings -30 Units V 25 V -3 -16 PD Power Dissipation EAS Single Pulse Avalanche Energy VRRM Schotty Repetitive Peak Reverse Voltage IO Schotty Average Forward Current TJ, TSTG Operating and Storage Junction Temperature Range A (Note 1a) 1.6 W (Note 2) 6 mJ -20 V (Note 1a) -2 A -55 to +150 C Thermal Characteristics RJA Thermal Resistance, Junction to Ambient RJC Thermal Resistance, Junction to Case (Note 1a) 78 (Note 1) 40 C/W Package Marking and Ordering Information Device Marking FDFS2P753Z Device FDFS2P753Z (c)2006 Fairchild Semiconductor Corporation FDFS2P753Z Rev.A Package SO-8 1 Reel Size 330mm Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode November 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient -30 ID = -250A, referenced to 25C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V mV/C -21 VDS = -24V, -1 VGS = 0V TJ = 125C -100 VGS = 25V, VDS = 0V A 10 A -3 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250A, referenced to 25C rDS(on) gFS Drain to Source On-Resistance Forward Transconductance -1 -2.1 5 mV/C VGS = -10V, ID = -3.0A 69 115 VGS = -4.5V, ID = -1.5A 115 180 VGS = -10V, ID = -3.0A, TJ = 125C 97 162 VDS = -5V, ID = -3.0A 6 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz 340 455 pF 80 110 pF 65 100 pF f = 1MHz 18 VDD = -10V, ID = -3.0A VGS = -10V, RGEN = 6 7 14 ns 31 50 ns 18 33 ns 20 35 ns 6.6 9.3 nC 3.3 4.6 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at -10V VGS = 0V to -10V Qg(4.5) Total Gate Charge at -4.5V VGS = 0V to -4.5V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = -10V ID = -3.0A 1.3 nC 1.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -2.0A (Note 3) IF = -3.0A, di/dt = 100A/s -0.9 -1.2 V 20 30 ns 14 21 nC Schottky Diode Characteristics IR Reverse Leakage VF = 20V IF = 1A VF Forward Voltage IF = 2A FDFS2P753Z Rev.A 2 TJ = 25C 190 A TJ = 125C 66 mA TJ = 25C 0.5 TJ = 125C 0.39 TJ = 25C 0.58 TJ = 125C 0.53 V www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25C unless otherwise noted 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. b) 135C/W when mounted on a minimun pad a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper 2: Starting TJ = 25oC, L = 3mH, IAS = 2A, VDD = 27V, VGS = 10V 3: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDFS2P753Z Rev.A 3 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Notes: -ID, DRAIN CURRENT (A) VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 12 VGS = -5V 8 VGS = -4.5V VGS = -4V 4 VGS = -3.5V 0 0 1 2 3 4 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 5 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 3.5 3.0 VGS = 3.5V VGS = -4.5V 1.5 1.0 0.5 VGS = -10V 0 4 8 12 -ID, DRAIN CURRENT(A) 16 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 450 1.6 ID = -3A VGS = -10V 1.4 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On-Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 12 TJ = 150oC TJ = 25oC 8 4 TJ = -55oC 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Transfer Characteristics FDFS2P753Z Rev.A ID = -3A 400 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 350 300 250 TJ = 150oC 200 150 100 50 TJ = 25oC 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 16 -ID, DRAIN CURRENT (A) VGS = -5V 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 VGS = 4V 2.5 20 10 VGS = 0V TJ = 150oC 1 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 800 VDD = -5V 8 6 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -10V 4 VDD = -15V 2 0 0 2 4 6 -Qg, GATE CHARGE(nC) Ciss f = 1MHz VGS = 0V 20 0.1 8 Figure 7. Gate Charge Characteristics 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 3.5 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) Crss Figure 8. Capacitance vs Drain to Source Voltage 4 3 TJ = 25oC 2 TJ = 125oC 1 0.01 0.1 tAV, TIME IN AVALANCHE(ms) 1 P(PK), PEAK TRANSIENT POWER (W) 1ms 10ms 0.01 0.1 1 SINGLE PULSE TJ = MAX RATED TA = 25OC 100ms 1s 10s DC 10 80 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDFS2P753Z Rev.A 2.0 1.5 VGS = -4.5V 1.0 0.5 o RJA = 78 C/W 25 50 75 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100us 0.1 VGS = -10V o 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 2.5 TA, AMBIENT TEMPERATURE ( C) 30 1 3.0 0.0 Figure 9. Unclamped Inductive Switching Capability -ID, DRAIN CURRENT (A) Coss 100 200 100 VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 10 150 - T A -----------------------125 TA = 25oC 1 0.6 -4 10 SINGLE PULSE -3 10 -2 -1 0 1 2 10 10 10 10 t, PULSE WIDTH (s) 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted IR, REVERSE LEAKAGE CURRENT (mA) IF, REVERSE LEAKAGE CURRENT (A) 30 10 1 TJ = 125oC 0.1 0.01 TJ = 25oC 1E-3 0.0 0.4 0.8 1.2 1.6 2.0 10 TJ = 125oC 1 0.1 0.01 TJ = 25oC 1E-3 0 5 10 15 20 VR, REVERSE VOLTAGE (V) VF, REVERSE VOLTAGE (V) Figure 14. Schottky Diode Reverse Current Figure 13. Schottky Diode Forward Voltage 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve FDFS2P753Z Rev.A 6 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. 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Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21