Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 4 1Publication Order Number:
MBR2060CT/D
MBR2060CT, MBR2080CT,
MBR2090CT, MBR20100CT
MBR2060CT and MBR20100CT are Preferred Devices
SWITCHMODE
Power Rectifiers
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state–of–the–art devices have the following features:
•20 Amps Total (10 Amps Per Diode Leg)
•Guard–Ring for Stress Protection
•Low Forward Voltage
•150°C Operating Junction Temperature
•Epoxy Meets UL94, VO at 1/8″
•Low Power Loss/High Efficiency
•High Surge Capacity
•Low Stored Charge Majority Carrier Conduction
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.9 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Shipped 50 units per plastic tube
•Marking: B2060, B2080, B2090, B20100
MAXIMUM RATINGS
Please See the Table on the Following Page
Device Package Shipping
ORDERING INFORMATION
MBR2060CT TO–220
http://onsemi.com
TO–220AB
CASE 221A
PLASTIC
50 Units/Rail
3
4
1
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
60–100 VOLTS
1
3
2, 4
Preferred devices are recommended choices for future use
and best overall value.
MBR2080CT TO–220 50 Units/Rail
2
MBR2090CT TO–220 50 Units/Rail
MBR20100CT TO–220 50 Units/Rail
MARKING DIAGRAM
YY WW
B20x0
A K A
YY = Year
WW = Work Week
B20x0 = Device Code
x = 6, 8, 9 or 10
AKA = Polarity Designator
MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT
http://onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
MBR
Rating Symbol 2060CT 2080CT 2090CT 20100CT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 80 90 100 Volts
Average Rectified Forward Current
(Rated VR) TC = 133°CIF(AV) 10 Amps
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°CIFRM 20 Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM 150 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 0.5 Amp
Operating Junction Temperature TJ65 to +150 °C
Storage Temperature Tstg 65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/µs
THERMAL CHARACTERISTICS
Maximum Thermal Resistance — Junction to Case
— Junction to Ambient RθJC
RθJA 2.0
60 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF0.75
0.85
0.85
0.95
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR6.0
0.1
mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.
MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT
http://onsemi.com
3
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode
Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient
Figure 5. Average Power Dissipation and
Average Current
0.60
vF, INSTANTANEOUS VOLTAGE (VOLTS)
20
50
10
VR, REVERSE VOLTAGE (VOLTS)
0
110
TC, CASE TEMPERATURE (°C)
14
6.0
8.0
0
TA, AMBIENT TEMPERATURE (°C)
200
20
16
12
6.0
0
40
4.0 8.00
AVERAGE CURRENT (AMPS)
20
8.0
6.0
4.0
2.0
0
6.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
I
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
5.0
3.0
0.2 0.4 0.8 20 40 60 80
0.1
1.0
120 130 140 150 60 80 160
10 2012
14
1.0
0.5
1.0 140
, REVERSE CURRENT (mA)
R
10
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
2.0 14 16 18
10
12
dc
SQUARE WAVE
dc
TJ = 25°C
150°C
TJ = 150°C
125°C
100°C
0.01 25°C
12
10
16
20
18 18
14
10
8.0
100 120 140
AVERAGE POWER (WATTS)
RATED VOLTAGE
APPLIED
SQUARE WAVE
dc
RATED VOLTAGE APPLIED
RJC = 2°C/W (HEATSINK)
RJA = 16°C/W
(NO HEATSINK)
RJA = 60°C/W
SQUARE WAVE
dc
TA = 25°C
125°C100°C
0.50.1 0.3 0.7 0.9 100 120
160
2.0
4.0
2.0
4.0
180 200
18
16 IPK/IAV =
IPK/IAV = 5.0
IPK/IAV = 10
IPK/IAV = 20
MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT
http://onsemi.com
4
PACKAGE DIMENSIONS
TO–220
PLASTIC
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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MBR2060CT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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