- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260
o
C/10s
- Weight: 0.008g (approximately)
- Marking Code: 1AM
SYMBOL UNIT
P
D
mW
V
CBO
V
V
CEO
V
V
EBO
V
I
C
mA
T
J
, T
STG o
C
Notes:1. Valid provided that electrodes are kept at ambient temperature
SYMBOL UNIT
I
C
= 10 μAV
(BR)CBO
V
I
C
= 1 mA V
(BR)CEO
V
I
E
= 10 μAV
(BR)EBO
V
V
CB
= 60 V I
CBO
μA
V
CE
= 30 V I
CEO
nA
V
EB
= 5 V I
EBO
μA
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 1 V
I
C
= 50 mA V
CE(sat)
V
I
C
= 50 mA V
BE(sat)
V
Transition frequency V
CE
= 20 V I
C
= 10 mA f
T
MHz
Delay time V
CC
= 3 V V
BE
= 0.5 V t
d
ns
Rise time t
r
ns
Storage time V
CC
= 3 V t
s
ns
Fall time t
f
ns
Document Number: DS_S1412034 Version: D14
I
B1
= I
B2
= 1.0 mA -50
Collector Cut-off Current V
BE(OFF)
= 3 V -50
400
-
-
I
B1
= 1.0 mA -35
I
C
= 10 mA - 200
I
C
= 10 mA -35
f= 100MHz 250 -
0.3
I
B
= 5 mA -Base-Emitter Saturation Voltage 0.95
Collector-Emitter Saturation Voltage I
B
= 5 mA -
DC Current Gain
I
C
= 10 mA
h
FE
100
I
C
= 50 mA 60
I
C
= 100 mA 30
Collector Cut-off Current I
E
= 0 -0.1
Emitter Cut-off Current I
C
= 0 -0.1
Collector-Emitter Breakdown Voltage I
B
= 0 40 -
Emitter-Base Breakdown Voltage I
C
= 0 6-
Junction and Storage Temperature Range -55 to +150
PARAMETER MIN MAX
Collector-Base Breakdown Voltage I
E
= 0 60 -
Emitter-Base Voltage 6
Collector Current 200
Power Dissipation 300
Collector-Base Voltage 60
Collector-Emitter Voltage 40
PARAMETER VALUE
SOT-23
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25℃ unless otherwise noted)
MMBT3904
Taiwan Semiconductor
Small Signal Product
300mW, NPN Small Signal Transistor
FEATURES