IPD25N06S2-40
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C, VGS=10 V 29 A
TC=100 °C,
VGS=10 V2) 21
Pulsed drain current1) ID,pulse TC=25 °C 116
Avalanche energy, single pulse EAS ID=25A 80 mJ
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 68 W
Operating and storage temperature Tj, Tstg -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
VDS 55 V
RDS(on),max (SMD version) 40 mΩ
ID29 A
Product Summary
PG-TO252-3-11
Type Package Marking
IPD25N06S2-40 PG-TO252-3-11 2N0640
Rev. 1.0 page 1 2006-07-18
IPD25N06S2-40
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 2.2 K/W
Thermal resistance, junction -
ambient, leaded RthJA - - 100
SMD version, device on PCB RthJA minimal footprint - - 75
6 cm2 cooling area2) --50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 55 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=26 µA 2.1 3.0 4.0
Zero gate voltage drain current IDSS
VDS=55 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=55 V, VGS=0 V,
Tj=125 °C1) - 1 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=13 A, - 28.6 40 mΩ
Values
Rev. 1.0 page 2 2006-07-18
IPD25N06S2-40
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics1)
Input capacitance Ciss - 513 - pF
Output capacitance Coss - 163 -
Reverse transfer capacitance Crss -61-
Turn-on delay time td(on) -8-ns
Rise time tr-20-
Turn-off delay time td(off) -18-
Fall time tf-19-
Gate Char
g
e Characteristics1)
Gate to source charge Qgs - 2.9 4 nC
Gate to drain charge Qgd - 6.3 8
Gate charge total Qg- 14.0 18
Gate plateau voltage Vplateau - 5.7 - V
Reverse Diode
Diode continous forward current1) IS- - 29 A
Diode pulse current1) IS,pulse - - 116
Diode forward voltage VSD
VGS=0 V, IF=25 A,
Tj=25 °C - 0.9 1.3 V
Reverse recovery time1) trr
VR=30 V, IF=IS,
diF/dt=100 A/µs -31-ns
Reverse recovery charge1) Qrr
VR=30 V, IF=IS,
diF/dt=100 A/µs -40-nC
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=25 A, RG=22 Ω
VDD=44 V, ID=25 A,
VGS=0 to 10 V
Rev. 1.0 page 3 2006-07-18
IPD25N06S2-40
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 10 V
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
100
10-1
10-2
10-3
10-4
10-5
10-6
10-7
100
10-1
10-2
10-3
tp [s]
ZthJC [K/W]
0
10
20
30
40
50
60
70
0 50 100 150 200
TC [°C]
Ptot [W]
0
10
20
30
0 50 100 150 200
TC [°C]
ID [A]
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
VDS [V]
ID [A]
Rev. 1.0 page 4 2006-07-18
IPD25N06S2-40
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C RDS(on) = (ID); Tj = 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. Forward transconductance
ID = f(VGS); VDS = 6V gfs = f(ID); Tj = 25°C
parameter: Tjparameter: gfs
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
10
20
30
40
50
60
01234567
VDS [V]
ID [A]
5.5 V 6 V 6.5 V
7 V
10 V
20
30
40
50
60
70
80
90
100
110
120
0 102030405060
ID [A]
RDS(on) [mΩ]
25 °C
175 °C
-55 °C
0
10
20
30
40
50
234567
VGS [V]
ID [A]
0
4
8
12
16
20
24
28
32
0 1020304050
ID [A]
gfs [S]
Rev. 1.0 page 5 2006-07-18
IPD25N06S2-40
9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(ON) = f(Tj)VGS(th) = f(Tj); VGS = VDS
parameter: ID = 13 A; VGS = 10 V parameter: ID
11 Typ. capacitances 12 Typical forward diode characteristicis
C= f(VDS); VGS = 0 V; f = 1 MHz IF = f(VSD)
parameter: Tj
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD [V]
IF [A]
Ciss
Coss
Crss
102
103
104
0 5 10 15 20 25 30
VDS [V]
C [pF]
26 µA
130 µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
10
20
30
40
50
60
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
Rev. 1.0 page 6 2006-07-18
IPD25N06S2-40
13 Typical avalanche energy 14 Typ. gate charge
EAS = f(Tj)VGS = f(Qgate); ID = 25 A pulsed
parameter: ID
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS) = f(Tj); ID = 1 mA
25 A
12.5 A
6.25 A
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150 175
Tj [°C]
EAS [mJ]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
11 V
44 V
0
2
4
6
8
10
12
02468101214
Qgate [nC]
VGS [V]
50
52
54
56
58
60
62
64
66
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
Rev. 1.0 page 7 2006-07-18
IPD25N06S2-40
Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg
©
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
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Rev. 1.0 page 8 2006-07-18
