Isocom Ltd reserves the right to change the details on this specification without notice. Please consult Isocom Ltd prior to use.
Isocom Ltd cannot accept liability for any errors or omissions.
For sales enquiries, or further information, please contact our sales office at:
Isocom Ltd, Hutton Close, Crowther Industrial Estate, District 3, Washington, NE38 0AH
Tel: +44 0191 4166 546 Fax: +44 0191 4155 055 Email Isocom@isocomoptocouplers.com
Or go to the Isocom Website @: Http://www.isocom.uk.com
TRANSISTOR
OPTOCOUPLERS
ISOCOM®LTD
SFH615A-1/2/3/4
SM
43
12
DESCRIPTION
These devices are single, optocouplers. Each channel is composed of a Gallium Arsenide infra-red
emitting diode and a silicon phototransistor. Package styles for these devices include 4 pin with
surface mount, butt cut and gull wing options available.
The same electrical die, assembly processes and materials are used for each channel of each device
shown below. Therefore absolute maximum ratings, recommended operating conditions, electrical
specifications and performance characteristics are identical for all units. Any exceptions, due to
packaging variations and limitations, are as noted.
Isocom Ltd supplies a multitude of plastic
optocouplers for all applications varying from
standard transistor optos through to Darlington’s
and Schmitt Trigger devices. It’s massive family
of optos vary in speed allowing maximum
opportunity to engineers worldwide.
All devices are performance guaranteed between
temperatures and have completed rigorous
testing.
The Company's customers can be assured of our
commitment to stringent quality, reliability and
inspection standards, as demonstrated by our
existing approvals. Other customer specific
options can also be offered.
FEATURES
Performance guaranteed over -45°C to +100°C temperature range
Manufactured and tested in BS9000 and CECC20000 approved premises
High current transfer ratio
7500V electrical isolation
Isocom Ltd reserves the right to change the details on this specification without notice. Please consult Isocom Ltd prior to use.
Isocom Ltd cannot accept liability for any errors or omissions.
For sales enquiries, or further information, please contact our sales office at:
Isocom Ltd, Hutton Close, Crowther Industrial Estate, District 3, Washington, NE38 0AH
Tel: +44 0191 4166 546 Fax: +44 0191 4155 055 Email Isocom@isocomoptocouplers.com
Or go to the Isocom Website @: Http://www.isocom.uk.com
ABSOLUTE MAXIMUM RATINGS
Storage Temperature -65°C to +100°C
Operating Temperature -45°C to +100°C
Lead Soldering Temperature 260°C 1.6mm from case for 10S
Input-to-Output Isolation Voltage ×7500VDC
Input Diode
Forward DC Current 50mA
Reverse DC Voltage 7V
Peak forward Current 1.5mA ≤ 10µS duration
Power Dissipation 100mW Derate linearly above 100°C at 1.6W/°C.
Output Transistor
Collector-Emitter Voltage 50V BVCEO
Emitter-Collector Voltage 7V BVECO
Collector-Base Voltage 70V BVCBO For
Collector Current 50mA
Collector Current 100mA t = 1mS
Power Dissipation 100mW For . Derate linearly above 100°C at 1.4W/°C
PACKAGES
0.26
7.62
6.50
1.00
10.00
2.54
4.60
3.50 0.4
1.20 0.26
GULL WING and Dil version are available for all the above.
Isocom Ltd reserves the right to change the details on this specification without notice. Please consult Isocom Ltd prior to use.
Isocom Ltd cannot accept liability for any errors or omissions.
For sales enquiries, or further information, please contact our sales office at:
Isocom Ltd, Hutton Close, Crowther Industrial Estate, District 3, Washington, NE38 0AH
Tel: +44 0191 4166 546 Fax: +44 0191 4155 055 Email Isocom@isocomoptocouplers.com
Or go to the Isocom Website @: Http://www.isocom.uk.com
ELECTRICAL CHARACTERISTICS
TA = 25°C U.O.S. (each channel where appropriate).
Input Diode Electrical Characteristics
Parameter Symbol Test Conditions Device Min Typ Max Units
Forward Voltage VF I
F = 10mA 0.7 1.18 1.4 V
I
F = 10mA, TA = 125°C 0.7 1.10 1.2
I
F = 10mA, TA = -55°C 0.7 1.29 1.5
Reverse Breakdown
Voltage VR I
R = 0.1mA 7 - - V
Reverse Current IR V
R = 3V - - 100 µA
Capacitance CIN V = 0, f = 1MHz - 25 - pF
Output Detector Electrical Characteristics
Collector-Emitter
Breakdown Voltage
(See note 1 below)
BVCEO I
C = 1mA 50 - - V
Collector-Base Breakdown
Voltage
(See note 1 below)
BVCBO I
B = 0.1mA 70 - - V
Emitter-Collector
Breakdown Voltage BVECO I
E = 0.1mA 7 - - V
Emitter-Base Breakdown
Voltage BVEBO I
B = 0.1mA 5 - - V
Collector-Emitter Leakage
Current ICEO V
CE = 20V, IF = 0 - 6 100 nA
V
CE = 20V, IF = 0, TA = 125°C - 8 100 µA
Coupled Electrical Characteristics
DC Current Transfer Ratio IC/IF I
F = 10mA, VCE = 5V SFH615A-1 40 - 100 %
(See note 3) SFH615A-2 63 - 125
SFH615A-3 100 - 200
SFH615A-4 160 - 320
Collector-Emitter
Saturation Voltage VCE
(Sat) IF = 10mA, IC = 2.5mA - - 0.3 V
Input to Output Capacitance CIO V
IO = 0, f = 1mhz (See note 2 below) - 2 5 pF
Input to Output Resistance RIO V
IO = 500V (See note 2 below) - 1011 - Ð
Isolation Voltage VIO (See note 2 below) 7500 - - VDC
Delay Time td VCC = 5V, IC = 2mA - 3.3 7 µS
Rise Time tr RL = 100Ohms - 5.0 8 µS
Storage Time ts - 0.4 0.8 µS
Fall Time tf - 4.8 8 µS
Turn -on Time ton V
CC = 5V, If = 5mA - 4 15 µS
Turn-off Time toff R
L = 1KOhms - 8 20 µS
Notes
1. BVCEO and BVCBO can be selected to suit customer specifications.
2. Measured between input when leads 1, 2 and 3 are shorted together, and output when leads 4, 5 and 6 are shorted together.
3. A higher CTR can be selected to suit customer specification as a standard part.
