DF005M thru DF10M
Vishay General Semiconductor
Document Number: 88571
Revision: 14-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
MECHANICAL DATA
Case: DFM
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV) 1 A
VRRM 50 V to 1000 V
IFSM 50 A
IR5 µA
VF1.1 V
TJ max. 150 °C
Case Style DFM
~
~
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Device marking code DF005 DF01 DF02 DF04 DF06 DF08 DF10
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward output rectified
current at TA = 40 °C IF(AV) 1.0 A
Peak forward surge current single
sine-wave superimposed on rated load IFSM 50 A
Rating for fusing (t < 8.3 ms) I2t 10 A2s
Operating junction and storage
temperature range TJ, TSTG - 55 to + 150 °C
DF005M thru DF10M
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88571
Revision: 14-Jan-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Maximum
instantaneous forward
voltage drop per diode
1.0 A VF 1.1 V
Maximum
reverse current at
rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
500 µA
Typical junction
capacitance per diode 4.0 V, 1 MHz CJ 25 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Typical thermal resistance (1) RθJA
RθJL
40
15 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
DF06M-E3/45 0.416 45 50 Tube
Figure 1. Derating Curve Output Rectified Current
20 40 60 80100 120 140 150
0
0.5
1.0
60 Hz
Resistive or
Inductive Load
P. C . B . M o unted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
Ambient Temperature (°C)
Average Forward Output Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
10
20
30
40
50
60
1.0 Cycle
TJ = 150 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Average Forward Output Current (A)
DF005M thru DF10M
Vishay General Semiconductor
Document Number: 88571
Revision: 14-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4 0.6 0.81.0 1.2 1.4
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance
110 100
1
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1 110 100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.315 (8.00)
0.285 (7.24)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.335 (8.51)
0.320 (8.12)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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