DE150-101N09A
RF Power MOSFET
V
DSS = 100 V
ID25 = 9.0 A
RDS(on) ≤ 0.16 Ω
ΩΩ
Ω
PDC = 200 W
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 100 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 100 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
c
= 25°C 9.0 A
I
DM
T
c
= 25°C, pulse width limited by T
JM
54 A
I
AR
T
c
= 25°C 14 A
E
AR
T
c
= 25°C 7.5 mJ
dv/dt
I
S
≤ I
DM
, di/dt ≤ 100A/µs, V
DD
≤ V
DSS
,
T
j
≤ 150°C, R
G
= 0.2Ω 5.5 V/ns
I
S
= 0 >200 V/ns
P
DC
200 W
P
DHS
T
c
= 25°C
Derate 4.4W/°C above 25°C 80 W
P
DAMB
T
c
= 25°C 3.5 W
R
thJC
0.74 C/W
R
thJHS
1.50 C/W
Symbol Test Conditions Characteristic Values
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma 2 2.8 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
25
250 µA
µA
R
DS(on)
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 0.16 Ω
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test 2.5 3.0 S
T
J
-55 +175 °C
T
JM
175 °C
T
stg
-55 +175 °C
T
L
1.6mm(0.063 in) from case for 10 s 300 °C
Weight 2 g
T
J
= 25°C unless otherwise specified
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q
g
process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R
DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
DRAIN
SG1 SG2
GATE
SD1 SD2
DE150-101N09A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
min. typ. max.
R
G
5 Ω
C
iss
700 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz 200 pF
C
rss
30 pF
C
stray
Back Metal to any Pin 16 pF
T
d(on)
4 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2 Ω (External)
4 ns
T
d(off)
4 ns
T
off
4 ns
Q
g(on)
22 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
, Ig = 3 ma 3.4 nC
Q
gd
9.1 nC
(T
J
= 25°C unless otherwise specified)
Source-Drain Diode
(T
J
= 25°C unless otherwise specified)
Characteristic Values
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 9.0 A
I
SM
Repetitive; pulse width limited by T
JM
54 A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2% 1.5 V
T
rr
300 ns
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
DE150-101N09A
RF Power MOSFET
V
DS
vs.Capacitance
1
10
100
1000
10000
0 10 20 30 40 50 60 70 80
V
DS
Voltage (V)
Capacitance (pf)
Typical Transfer Characteristics
V
DS
= 30V PW = 20µS
0
5
10
15
20
25
30
35
40
45
50
55
3.5 4.5 5.5 6.5 7.5 8.5 9.5
V
GS
, Gate-to Source Voltage (V)
I
D
, Drain Current (A)
Extended Typical Output Characteristics
0
5
10
15
20
25
30
35
40
45
50
55
0 10 20 30 40 50
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Currnet (A)
Typical Output Characteristics
0
5
10
15
20
0 5 10 15 20 25 30 35 40 45 50
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Currnet (A)
Gate Charge vs. Gate-to-Source Voltage
VDS = 50V ID = 4.5A
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30 35
Gate Charge (nC)
Gate-to-Source Voltage (V)
Fig. 1 Fig. 2
Fig. 3 Fig. 4
Fig. 5
Top 10V
9V
8V
7V
6.5V
6V
5.5V
5V
4.5V
Bottom 4V
4.5V
4V
5.5V
5V
6V
6.5V
7V
to
10V
C
iss
C
oss
C
rss
DE150-101N09A
RF Power MOSFET
Fig. 6 Package Drawing
Source
Source
Source
Source
Gate Drain
DE150-101N09A
RF Power MOSFET
101N09A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of
the SPICE level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
.
Rd is the R
DS(ON)
of the device, Rds is the resistive leakage term. The output capaci-
tance, C
OSS
, and reverse transfer capacitance, C
RSS
are modeled with reversed biased
diodes. This provides a varactor type response necessary for a high power device
model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de150-101n09a.html
Net List:
*SYM=POWMOSN
.SUBCKT 101N09A 10 20 30
* TERMINALS: D G S
* 100 Volt 9 Amp .16 ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 .7N
RD 4 1 .16
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=100 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=100 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
Doc #9200-0242 Rev 5
© 2009 IXYS RF
