2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm * High breakdown voltage: VCEO = 140 V (min) * Complementary to 2SA1941 * Suitable for use in 70-W high fidelity audio amplifier's output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current IC 10 A Base current IB 1 A PC 100 W Tj 150 C Tstg -55 to 150 C Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 4.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-06 1 2013-11-01 2SC5198 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 140 V, IE = 0 5.0 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 5.0 A V (BR) CEO IC = 50 mA, IB = 0 140 V VCE = 5 V, IC = 1 A 55 160 hFE (2) VCE = 5 V, IC = 5 A 35 83 VCE (sat) IC = 7 A, IB = 0.7 A 0.3 2.0 V Base-emitter voltage VBE VCE = 5 V, IC = 5 A 0.9 1.5 V Transition frequency fT VCE = 5 V, IC = 1 A 30 MHz VCB = 10 V, IE = 0, f = 1 MHz 170 pF Collector-emitter breakdown voltage hFE (1) DC current gain (Note) Collector-emitter saturation voltage Collector output capacitance Cob Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Marking TOSHIBA C5198 Part No. (or abbreviation code) Lot No. NOTE 2 Characteristics indicator Note 2 : A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 2SC5198 IC - VCE 10 250 200 IC - VBE 10 Common emitter 150 (A) Collector current IC Collector current IC (A) Tc = 25C 100 8 6 50 40 4 30 20 2 8 6 Tc = 100C 25C 4 -25C 2 Common emitter VCE = 5 V IB = 10 mA 0 0 2 4 6 8 Collector-emitter voltage 0 0 10 0.4 0.8 Base-emitter voltage VCE (V) VCE (sat) - IC 1.6 2.0 VBE (V) hFE - IC 1000 10 Tc = 100C 1 DC current gain hFE Collector-emitter saturation voltage VCE (sat) (V) 1.2 Tc = 100C 0.1 Tc = 25C Tc = -25C Common emitter IC/IB = 10 0.01 0.01 0.1 1 10 Collector current IC 100 Tc = 25C Tc = -25C 10 100 (A) Common emitter VCE = 5 V 1 0.01 0.1 Collector current IC 1 10 (A) Safe Operating Area 30 IC max (pulsed)* 1 ms* IC max (continuous) 10 10 ms* Collector current IC (A) 5 DC operation Tc = 25C 3 100 ms* 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated 0.1 linearly with increase in VCEO max temperature. 0.05 2 3 10 30 Collector-emitter voltage 100 300 VCE (V) 3 2013-11-01 2SC5198 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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