MOTOROLA SC {XSTRS/R FI tb DEM b3b7254 004204? 3 Ey - . - ose . - . 6367254 MOTOROLA SC (XSTRS/R F) = s- 96D 82047 OD x . - 2 Jum (= MAXIMUM RATINGS T- 7 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vde MMBT5086 Collector-Base Voltage VcBo 50 Vde Emitter-Base Voltage VEBO 3.0 Vde MMBT5087 Collector Current Continuous I 50 mAdc st s CASE 318-02/03, STYLE 6 - TO- THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mW 3 Caltector Ta = 25C Darate above 25C 18 mWPC x 3 Thermal Resistance Junction to Ambient RJA 556 CimW 1 ge bose Total Device Dissipation Pp 300 mw 2 Alumina Substrate,** Ta = 25C 2 Emitter Derate above 25C 24 mWwFc Thermal Resistance Junction to Amblent RaJA 417 Cimiw Junction and Storage Temperature TJ: Tstg 150 C LOW NOISE TRANSISTOR FFR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0,4 x 0.3 x 0,024 in. 99.5% alumina. PNP SILICON DEVICE MARKING | MMBT5086 = 2P; MMBT5087 = 20 | Refer to 2N5086 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Callector-Emitter Breakdown Voltage VIBRJCEO 50 - Vde (lc = 1.0 mAde, tg = 0} Collector-Base Breakdawn Voltage ViBRICBO 50 - Vde {l = 100 pAde, tz = 0) Collector Cutoff Current IcBo nAdc (Vcp = 10 Vdc, Ie = 0) cd 10 (Veg = 35 Vde, Ip = 0) - 50 ON CHARACTERISTICS OC Current Gain hee - (Il = 100 pAde, Voce = 5.0 Vde} MMBTS5086 150 600 MMBT5087 250 800 (l = 1.0 mAde, Vee = 5.0 Vde} MMBT5086 150 _ MMBT5087 250 _ i (lc = 10 mAde, Vcg = 5.0 Vde) MMBT5086 150 _ MMBT5087 250 _ Collector-Emitter Saturation Voltage VcE(sat) _ 0.3 Vde (lc = 10 mAde, Ip = 1.0 mAdc} Base-Emitter Saturation Voltage VBE(sat) - 0.85 Vde (ig = 10 mAde, Ig = 1.0 mAde) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 40 - MHz (ic = 600 Ade, Voge = 5.0 Vide, f = 20 MHz) Output Capacitance Coba _ 4.0 pF (Vcp = 5.0 Vde, Ie = 0, f = 100 kHz) Small-Signal Current Gain hfe - {ig = 1.0 mAdc, VcE = 5.0 Vde, f = 1.0 kHz) MMBTS086 150 600 {lc = 1.0 mAde, Voge = 5.0 Vde, f = 1.0 kHz) MMBT5087 250 900 Noise Figure NF dB (i = 20 mAde, VcE = 5.0 Vde, Rg = 10 kn, f = 10 Hz to 15.7 kHz) MMBT5086 _ 3.0 MMBT5087 = 2.0 {ic = 100 pAde, VcE = 5.0 Vde, Rg = 3.0 kQ, f = 1.0 kHz) MMBT5086 _ 3.0 MMBT5087 _ 2.0 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-112MOTOROLA SC {XSTRS/R FI qb DeBfeseresy ovszoua s BE 6367254 MOTOROLA SC (XSTRS/R F)CO SBD 96D 82048 OD MAXIMUM RATINGS : , Value ] 2 G cf / 5 . Rating Symbol | MMBTS088 | MMBTS089 | Unit Collector-Emitter Voltage VcEO 30 25 Vde M M BT5088 ! \ Collector-Base Voltage VcBo 35 30 Vde MMBT5089 i Emitter-Base Voltage VEBO 45 Vde Collector Current Continuous Ic 50 mAdc CASE 318-02/03, STYLE 6 i t - . AAI, THERMAL CHARACTERISTICS SOT-23 (TO-236 AB) \ Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mW 3 Coltector Ta = 25C | Derate above 25C 18 mWwPrc Thermal Resistance Junction to Ambient Rasa 556 *CimW i Base Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C 2 Emitter Derate above 25C 2.4 mWwPc Thermal Resistance Junction to Ambient Raja 417 cimW Junction and Storage Temperature Ty. Tstg 180 c LOW NOISE TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. NPN SILICON DEVICE MARKING : | MMBT5088 = 10; MMBT5089 = 1R | Refer to MPSA18 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol | Min | Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voitage VIBRICEO Vdc (ic = 1.0 mAde, IB = 0) MM8T5088 30 - MMBT5089 25 _ Collector-Base Breakdown Voltage VIBRICBO Vde (Ic = 100 pAde, Ip = 0) MMBT5088 35 ~ MMBTS5089 30 - Collector Cutoff Current IcBo nAdc (Vep = 20 Vde, le = 0) MMB8T5088 _ 50 {Vep = 15 Vde, Ie = 0) MMBT5089 _ 50 Emitter Cutoff Current lEBO nAdc (VEBloff) = 3.0 Vde, I = 0} MMBT5088 - 50 (VEBloff) = 4.5 Vdc, Ic = 0} MMBT5083 _ 100 ON CHARACTERISTICS DC Current Gain {ic = 100 zAdc, VcE = 5.0 Vdc} MMBT5088 hFE 300 900 _ MMBTS5089 400 1200 t {ic = 1.0 mAde, VcE = 5.0 Vde} MMBTS088 380 _ MM8T5089 450 _ (Ic = 10 mAdc, Veg = 5.0 Vde) MMBT5088 300 _ MMBT5089 400 _ Collector-Emitter Saturation Voltage (Ic = 10 mAdc, Ip = 1.0 mAdc} VCE{sat) = 0.5 Vde Base-Emitter Saturation Voltage (l = 10 mAdc, Ip = 1.0 mAdc) VBE(sat) _ 0.8 Vdc SMALL SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 50 _ MHz llc = 500 wAdc, Vcr = 5.0 Vde, f = 20 MHz} Collector-Base Capacitance Cob - 4.0 pF Vcp = 5.0 Vde, Ie = 0, f = 100 kHz emitter guarded) Emitter-Base Capacitance Ceb _ 10 pF (VgE = 0.5 Vde, Ic = 0, f = 100 kHz collector guarded) Small Signal Currant Gain hte (I = 1.0 mAde, Voce = 5.0 Vde, f = 1.0 kHz) MMBT5088 350 1400 MMBT5089 450 1800 Noise Figure NF dB (Ig = 100 pAde, Voge = 5.0 Vde, Rg = 10k, = 10 Hz to 15.7 Hz) MMBTS5088 _ 3.0 MMBT5089 _ 2.0 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-113 ee STII aa aMOTOROLA SC {XSTRS/R FI 9b DEM 6367254 0082049 I - = IAE- ITE oT _ 6367254 MOTOROLA SC CXSTRS/R F) 96D 82049 OD MAXIMUM RATINGS T 2 7 h S Rating Symbol Value Unit Collector-Emitter Voltage 150 Vde . MMBT5401 VcEO Collector-Base Voltage VcRo 160 Vde Emitter-Base Voltage VEBO 5.0 Vde CASE 318-02/03, STYLE 6 Collector Current Continuous Ic 500 mAdc SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mW Ta = 25C Derate above 25C 18 mWwFrc Thermal Resistance Junction to Ambient Rasa 556 CimW Total Device Dissipation Pp 300 mW Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWPrC Thermal Resistance Junction to Ambient Raga 417 CimW Junction and Storage Temperature Ty. Tstg 150 C HIGH VOLTAGE TRANSISTOR *PR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING MMBT5401 = 2L | Refer to 2N5401 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol Min Max Unit ] OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VIBRICEO 150 _ Vde (lg = 1.0 mAde, Ig = 0} Collector-Base Breakdown Voltage ViBRICBO 160 - Vde {Io = 100 pAde, Ig = 0) Emitter-Base Breakdown Voltage ViBR)JEBO 5.0 _- Vde (lE = 10 pAde, Ic = 0) Collector Cutoff Current IcBo (VcB = 100 Vde, IE = 0) _ 50 nAde (Vcp = 100 Vde, Ie = 0, Ta = 150C) =~ 50 pAdc ON CHARACTERISTICS DC Current Gain hee {le = 1.0 mAde, VoE = 5.0 Vde} 50 (l = 10 mAde, Voge = 5.0 Vdc} 60 240 {ic = 50 mAdc, Vcg = 5.0 Vdc) 50 1 Collector-Emitter Saturation Voltage VcE(sat} Vde {Ic = 10 mAde, Ig = 1.0 mAde) _ 0.20 (ig = 50 mAdc, Ip = 5.0 mAdc} _ 0.5 Base-Emitter Saturation Voltage VBE(sat) Vde {ic = 10 mAde, Ip = 1.0 mAdc) ~ 1.0 (ic = 50 mAde, Ip = 5.0 mAdc) ~ 1.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 100 300 MHz {Ig = 10 mAde, Voge = 10 Vde, f = 100 MHz) Output Capacitance Cobo _ 6.0 pF (Vcp = 10 Vde, Ip = 0, f = 1.0 MHz} Small Signal Current Gain hte 40 200 _ (Ic = 1.0 mAdc, Veg = 10 Vdc, f = 1.0 kHz} Noise Figure NF _ 8.0 dB (Ig = 200 pAdc, Voge = 5.0 Vde, Rg = 10 ohms, f = 10 Hz to 15.7 kHz) 3 Coliector 2 Emitter PNP SILICON MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-114 Srehraer: 2, aytcerrtsedentoramees rete ee eeMOTOROLA SC {XSTRS/R F} qb DeEBeab72sy coseoso 3 6367254 MOTOROLA SC (XSTRS/R F) , 96D 82050 OD MAXIMUM RATINGS 7 2 G -/ IS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 140 Vde MMBT5550 Collector-Base Voltage VcBo 160 Vdc Emitter-Base Voltage VEBO 6.0 Vde MMBT5551 Collector Current Continuous Ic 600 mAdc CASE 318-02/03, STYLE 6 = THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB} Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mW $ Collector TA = 25C 3 Derate above 25C 18 mwrc se 1 A 5 1 ae Base Therma! Resistance Junction to Ambient RelA 556 CimW 2 Total Device Dissipation Pp 300 mw 2 Emitter Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWwrc Thermal Resistance Junction to Ambient ResA 417 *CimW Junction and Storage Temperature Ty. Fst 150 C HIGH VOLTAGE TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0,024 in. 99.5% alumina. NPN SILICON DEVICE MARKING MMBTS550 = 1F; MMBTS551 = G1 __ | Refer to 2N5550 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | Symbofi Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) V(BR)CEO Vde (Ic = 1.0 mAdc, Ip = 0) MMBTSS50 140 _ MMBTS5551 160 Collector-Base Breakdown Voltage V(BRICBO Vde (I = 100 pAdc, Ip = 0} MMBT5550 160 _ MMBT5551 180 Emitter-Base Breakdown Voltage V(BRIEBO 6.0 _ Vde (lg = 10 wAde, Ic = 0) Collector Cutoff Current IcBO (Vcog = 100 Vde, Ig = 0) MMBTS550 _ 100 nAde (Vcg = 120 Vdc, Ie = 0} MMBT5551 _ 50 (VcB = 100 Vdc, Ie = 0, Ta = 100C) MMBT5550 - 100 nAdc (Vcg = 120 Vde, Ip = 0, Ta = 100C) MMBT5551 50 Emitter Cutoff Current lego _- 50 nAdc (VeB = 4.0 Vde, Ic = 0) ON CHARACTERISTICS(2} DC Current Gain hee - (ic = 1.0 mAdc, VcE = 5.0 Vde} MMBT5550 60 ~ MMBTb5551 80 _ (Ic = 10 mAdc, Vc = 5.0 Vdc) MMBTS5550 60 250 MMBT5551 80 250 (Ic = 50 mAde, VcE = 5.0 Vdc) MMBTS550 20 MMBT5551 30 Collector-Emitter Saturation Voltage VcEisat) Vde (Ic = 10 mAdg, Ip = 1.0 mAdc) Both Types ~ 0.15 {lc = 50 mAds, Ig = 5.0 mAdc) MMBT5S50 _ 0.25 MMBT5551 - 0.20 Base-Emitter Saturation Voltage VBE(sat) Vde (I = 10 mAde, Ig = 1.0 mAdc} Both Types _ 1.0 {I = 50 mAde, Ip = 5.0 mAdc} MMBT5550 1.2 MMBT5551 ~ 1.0 (2) Pulse Test: Pulse Width = 300 ys, Duty Cycle = 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-115 i et pn ee rtOURO Ae OA MISE RNOCLINL crtneere nuee 6387254 MOTOROLA SC CXSTRS/R F) MOTOROLA SC IXSTRS/R F} MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage . Vceo 40 Vde Collector-Base Voltage VcBo 40 Vde Emitter-Base Voltage VEBO 12 Vde Collector Current Continuous Ic 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw Ta = 26C Derate above 25C 1.8 mwrc Thermal Resistance Junction to Ambient RaJA 556 *CimW Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C Derate above 25C 24 mWwPrc Thermal Resistance Junction to Ambient RoJa 417 Cimw Junction and Storage Temperature Ty. Tstg 150 C *FR-5 = 1.0 x 0.75 x 0,62 in. **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. DEVICE MARKING Fb DE fpbseresh Oogeos. & T 86D 82051 D Te 29-24 Prati MMBT6427 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) Collector 3 Ww: Base 1 eo 2 2 Emitter 1 DARLINGTON TRANSISTOR NPN SILICON | MMBT6427 = 1V ELECTRICAL CHARACTERISTICS (Ta = 25C untess otherwise noted.) Refer to 2N6426 for graphs. [ Characteristic [| Symbot [| Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VIBRICEO 40 _ Vde {lg = 10 mAde, Ip = 0} Collector-Base Breakdown Voltage ViBRICBO 40 _ Vde {lc = 100 pAds, Ie = 0} Emitter-Base Breakdown Voltage ViBRIEBO 12 _ Vde (Ic = 10 pAde, Ic = 0} Collector Cutoff Current IcEo - 1.0 pAdc (VcE = 25 Vdc, Ip = 0) Collector Cutoff Current IcBo 50 nAdec (Vcp = 30 Vde, Ie = 0) Emitter Cutoff Current leBo - 50 nAde (VBE = 10 Vde, ic = 0) ON CHARACTERISTICS , DC Current Gain hre - (ic = 10 mAdc, VoE = 5.0 Vdc) (lc = 100 mAdc, VcE = 5.0 Vde) (ig = 800 mAdc, Vcg = 8.0 Vd) 10,000 100,000 20,000 200,000 14,000 140,000 (Ic = 1.0 mAdc, Vee = 6.0 Vde, Rg = 100 kf, f = 1.0 kHz to 15.7 kHz) Coliector-Emitter Saturation Voltage VcE(sat) Vde (ic = 60 mAds, Ig = 0.5 mAdc) - 1.2 (I = 500 mAde, Ip = 0.5 mAdc} - Base-Emitter Saturation Voltage VBE(sat) - 2.0 Vde (lc = 500 mAde, ip = 0.5 mAdc) Base-Emitter On Voltage VBE{[on) - 4.75 Vide (Il = 50 mAde, Vcg = 5.0 Vde) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo - 7.0 pF (Vcp = 10 Vdc, Ie = 0, f = 1.0 MHz) input Capacitance Cibo _ 15 pF (Vee = 0.5, Ic = 0, f = 1.0 MHz} Current Gain High Frequency lhfel 13 - Vde (lc = 10 mAdc, Veg = 5.0 Vde,f = 100 MHz} Noise Figure NF _ 10 dB MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-116MOTOROLA SC {XSTRS/R FI db DEB eae7254 oosadse 7 at 6367254 MOTOROLA SC (XSTRS/R F) 96D 82052 D i MAXIMUM RATINGS T+ 29-4157 Value Rating Symbol | MMBT6428 | MMBT6429 | Unit Collector-Emitter Voltage VcEO 50 45 Vde MMBT6428 Collector-Base Voltage VcBo 60 65 Vde MMBT6429 Emitter-Base Voltage VEBO 6.0 Vde Collector Current Continuous Ic 200 mAdc CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symboi Max Unit Total Device Dissipation FR-5 Board,* Pp 226 mW 3 Collector Ta = 26C 3 Derate above 25C 1.8 mWrc 1 Thermal Resistance Junction to Ambient Rasa 556 C/mW 1 ge Base Total Device Dissipation Pp 300 mw 2 | emer Alumina Substrate,** Ta = 26C Derate above 25C 2.4 mWPrc Thermal Resistance Junction to Ambient Raja 417 *CimW Junction and Storage Temperature Ty Tstg 150 C AMPLIFIER TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. NPN SILICON **Alumina = 0.4 x 0.3 x 0,024 in. 99.6% alumina, DEVICE MARKING | MMBT6428 = 1K; MMBT6429 = iL Refer to MPSA18 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.} | Characteristic [ symbot | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BRICEO Vde (Ic = 1.0 mAdsg, ip = 0) MMBT6428 60 - (i = 1.0 mAdc, lg = 0) MMBT6429 45 - Collector-Base Breakdown Voltage V(BR)JCBO Vde (I = 0.1 mAde, Ig = 0) MMBT6428 60 _ {Ic = 0.1 mAdsg, IE = 0) MMB8T6429 55 _ Collector Cutoff Current IcEO _ 0.1 pAdc (Voce = 30 Vdc) Collector Cutoff Current lcBo _ 0.01 pAdc (Veg = 30 Vde, Ie = 0) Emitter Cutoff Current lEBO _- 0.01 pAdc (VeB = 5.0 Vde, Ic = 0) ON CHARACTERISTICS DC Current Gain hfe _ (te = 0.01 mAde, Vcg = .0 Vdc} MMBT6428 250 ~ MMBT6429 500 - {ic = 0.1 mAdc, Vcg = 5.0 Vdc} MMBT6428 250 650 MMBT6429 500 1250 {Io = 1.0 mAdc, VcE = 5.0 Vdo} MMBT6428 250 - MMBT6429 500 - (Ig = 10 mAdg, Vcg = 5.0 Vde} MMBT6428 250 MMBT6429 500 - Collector-Emitter Saturation Voltage VcE(sat) Vde {Ic = 10 mAdsc, Ig = 0.6 mAdc) _ 0.2 (I = 100 mAdc, lg = 5.0 mAdc) _ 06 Base-Emitter On Voitage VBE(on) 0.56 0.66 Vde (Ic = 1.0 mAdc, Voce = 6.0 Vde) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 100 700 MHz (I = 1.0 mAdc, VcE = 5.0 Vde, f = 100 MHz) Output Capacitance Cobo _ 3.0 pF (Vcp = 10 Vde, Ie = 0, f = 1.0 MHz) input Capacitance Cibo _ 8.0 pF (Veg = 0.5 Vde, Ic = 0, f = 1.0 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-117 -MOTOROLA SC {XSTRS/R F} ia De Bfese7esy onaeosa a 96D 82053 _367254 MOTOROLA SC CXSTRS/R F) BD ~ "MAXIMUM RATINGS _ 7 2 Ge) [5 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 350 Vde Collector-Base Voltage VcBo 350 Vdc MMBT65 17 Emitter-Base Voltage VEBO 5.0 Vde Base Current IB 250 mA CASE 318-02/03, STYLE 6 Collector Current Continuous Ic 500 mA SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbot Max Unit 3 Collector Total Device Dissipation FR-S Board,* Pp 225 mw 3 Ta = 25C 1 Derate above 25C 1.8 mWFC 1 ge Base Thermal Resistance Junction to Ambient ResA 556 CimW 2 b emitter Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mwrc Thermal Resistance Junction to Ambient Rea 417 Cimw HIGH VOLTAGE TRANSISTOR i Ty. T: 150 c Junction and Storage Temperature Je Tstg NPN SILICON *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. DEVICE MARKING | MMBT6517 = 1Z Refer to 2N6517 for graphs, ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbet Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 350 _ Vde {Ic = 1.0 mA) Collector-Base Breakdown Voltage ViBR)CBO 350 _ Vde (Ic = 100 2A) Emitter-Base Breakdown Voltage V(BRIEBO 6.0 _ Vdc {le = 10 pA) Collector Cutoff Current 'cBo - 50 nA (Yop = 250 V) Emitter Cutoff Current leBo 50 nA (Veg = 5.0 V) |__AvEE ON CHARACTERISTICS OC Current Gain HEE - (Ic = 1.0 mA, VcE = 10 V) 20 _ \ {lc = 10 mA, Vee = 10 V} 30 _ {lc = 30 mA, VcE = 10 V) 30 200 (l = 50 mA, Vg = 10 V) 20 200 (l = 100 mA, Veg = 10 V) 15 ~ Collector-Emitter Saturation Voltage VCE(sat) Vde (I = 10 mA, Ip = 1.0 mA} - 0.30 (ig = 20 mA, Ip = 2.0 mA) - 0.35 (le = 30 mA, Ip = 3.0 mA) - 0.50 (I = 50 mA, Ig = 6.0 mA) _ 1.0 Base-Emitter Saturation Voltage VBE(sat) Vde {tc = 10 mA, Ig = 1.0 mA) - 0.75 {lc = 20 mA, Ig = 2.0 mA) _ 0.85 (Ic = 30 mA, Ip = 3.0 mA) 0.90 Base-Emitter On Voltage VBE(on) - 2.0 Vde (lc = 100 mA, Vce = 10 ) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 40 200 MHz (lc = 10 mA, VcE = 20 V, f = 20 MHz} Collector-Base Capacitance Cob _ 6.0 pF (Vcp = 20V, f = 1.0 MHz} Emitier-Base Capacitance Ceb 80 pF (Veg = 0.5 V, f = 1.0 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-118 A TT RAI EMO RE OMNIMOTOROLA SC IXSTRS/R F} Te DE gpbs67?e54 O048eo54 O IT 6367254 MOTOROLA SC (XSTRS/R F) 86D 82054 D- MAXIMUM RATINGS ___ T a G - /S Re erent en Rating Symbol Value Unit Collectar-Emitter Voltage VCEO 350 Vde Collector-Base Voltage VcBo 350 Vde MMBT6520 Emitter-Base Voltage VEBO 5.0 Vde Base Current ta 250 mA CASE 318-02/03, STYLE 6 Collector Current Continuous Ic 500 mAdc SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Collector Total Device Disslpation FR-5 Board,* Pp 225 mW w 3 Ta = 26C 3 Derate above 25C 18 mwrc 1 9 ge ane Thermai Resistance Junction to Ambient Raja 656 c/mW 2 Emitter Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWrc HIGH VOLTAGE TRANSISTOR Thermal Resistance Junction to Ambient ReJaA 417 CimW - PNP SILICON Junction and Storage Temperature Ty. Tst 160 c *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0,024 in. 99.5% alumina. | DEVICE MARKING Refer to 2N6520 for graphs. [ mmereszo = 22 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.} [ Characteristic | Symbol | Min Max Unit OFF CHARACTERISTICS . Collector-Emitter Breakdown Voltage V(BRICEO 350 _ Vde {Ic = 1.0 mA) Collector-Base Breakdown Voltage V(BRICBO 350 _ Vde (l = 100 2A) Emitter-Base Breakdown Voltage V(BR)EBO 5.0 _ Vde (le = 10 uA) Collector Cutoff Current ICBO - 50 nA (Veg = 250 V) Emitter Cutoff Current lego _- 50 nA (Veg = 4.0 V) : ON CHARACTERISTICS DC Current Gain hee oe (Ic = 1.0 MA, Veg = 10 V} 20 {Ic = 10 mA, VcE = 10 V) 30 (ic = 30 mA, VcE = 10 V) 30 200 (i = 50 mA, Voce = 10 V) 20 200 (ig = 100 mA, VcE = 10 V) 15 _ Collector-Emitter Saturation Voltage VCE(sat) Vde (l = 10 mA, Ip = 1.0 mA) _- 0.30 (I = 20 mA, Ip = 2.0 mA) _ 0,35 (Ic = 30 mA, Ig = 3.0 mA} _ 0.50 (Ic = 50 mA, Ig = 6.0 mA) _ 1.0 Base-Emitter Saturation Voltage VBE(sat) Vde (i = 10 mA, lg = 1.0 mA) _ 0.75 (i = 20 mA, Ig = 2.0 mA) 0.85 {ig = 30 mA, ip = 3.0 mA) _ 0.90 Base-Emitter On Voltage VBE(on) Vde (Il = 100 mA, VcE = 10 V) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 40 200 MHz (ic = 10 MA, Vcg = 20 V, f = 20 MHz) Collector-Base Capacitance Cob _ 6.0 pF (Vcp = 20 V, f = 1.0 MHz) Emitter-Base Capacitance Ceb _ 100 pF (Veg = 0.5 V, f = 1.0 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-119