BAT54SW Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-323 CASE 419 STYLE 9 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Total Power Dissipation @ TA = 25C Derate above 25C PD 200 1.6 mW mW/C Forward Current (DC) IF 200 mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM Junction Temperature 1 ANODE 2 CATHODE 3 CATHODE/ANODE MARKING DIAGRAM mA 600 B8M G G mA 300 1 TJ -55 to 125 C Storage Temperature Range Tstg -55 to +150 C Electrostatic Discharge ESD HM < 8000 MM < 400 V V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. B8 M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping BAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel NSVBAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2016 April, 2019 - Rev. 12 1 Publication Order Number: BAT54SWT1/D BAT54SW ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr Min Typ Max 30 - - - 0.5 2.0 - - - - - 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.5 0.8 - 7.6 10 - - 5.0 Unit V mA V pF ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 W +10 V 2k 100 mH 0.1 mF IF tr 0.1 mF tp T IF trr 10% T DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% VR IR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAT54SW TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (mA) 1 25C 85C 10 1 50C 1.0 25C 0.1 0.0 -40C -55C 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0.6 Figure 2. Forward Voltage IR, REVERSE CURRENT (mA) 1000 TA = 150C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 0.001 TA = 25C 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 3. Leakage Current CT, TOATAL CAPACITANCE (pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance www.onsemi.com 3 25 30 BAT54SW PACKAGE DIMENSIONS SOT-323 (SC-70) CASE 419-04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE L A1 MIN 0.80 0.00 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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