V
RRM
= 20 V - 40 V
I
F
= 15 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Repetitive peak reverse voltage V
RRM
V
RMS reverse voltage V
RMS
V
DC blocking voltage
V
DC
V
1N5826 thru 1N5828R
2. Reverse polarity (R): Stud is anode.
Silicon Power
Schottk
y
Diode
Conditions 1N5826 (R) 1N5827 (R) 1N5828 (R)
30
2114
30
20
• Types from 20 V to 40 V V
RRM
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
20 40
28
40
DC
blocking
voltage
V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
V
R
= 20 V, T
j
= 25 °C
I
F
= 15 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
mA
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 100 °C
Conditions 1N5826 (R) 1N5827 (R)
1.8 1.8
V
R
= 20 V, T
j
= 125 °C 250 250
-55 to 150 -55 to 150
250
30
20
-55 to 150
-55 to 150 -55 to 150 -55 to 150
10
1N5828 (R)
0.44
10 10
1.8
15 15 15
500 500 500
40
0.47 0.5
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1
1N5826 thru 1N5828R
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
1N5826 thru 1N5828R
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
