HUF75332P3_NL - Fairchild Semiconductor

HUF75332G3, HUF75332P3, HUF75332S3S

60A, 55V, 0.019 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs

are manufactured using the

inno vat ive UltraFET ® process . This

advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstandi ng p erformance. This device is c apa ble

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficie nc y is important, such as s wi tch in g regul ators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portabl e

and battery-operated products.

Formerly developmental type TA75332.

Features

• 60A, 55V

• Simulation Models

- Temper atu re C omp ensat ed P SPIC E® an d SABER™

Models

- SPICE and SABER Thermal Impedance Models

Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Product r e liability informa tion can be found at http: //www.fairchilds e m i.com/products/discr e te/reliability /index .html

For severe environments, see our Automotive HUFA series.

All Fairchi ld semiconductor pr oduct s are manufactured, assembled and tested under IS O9000 and QS9000 quality systems certifi cation.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75332G3 TO-247 75332G

HUF75332P3 TO-220AB 75332P

HUF75332S3S TO-263AB 75332S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF75332S3ST.

JEDEC STYLE T O-247 JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(TAB)

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

Data Sheet January 2005

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . VDSS 55 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . VDGR 55 V

Gate to Sou rc e Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Dr a i n Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 60

Figure 4 A

Pulsed Avalan che Ra tin g. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figure 6

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145

0.97 W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 175 oC

Maximum Tem perature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .TL

P ackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg 300

260

CAUTION: St resses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a stress on ly rating and operation o f the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 55 - - V

Zero Gate Voltage Drain Current IDSS VDS = 50V, VGS = 0V - - 1 µA

VDS = 45V, VGS = 0V, TC = 150oC--250µA

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

ON STAT E SPECIFICAT ION S

Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (F igure 10) 2 - 4 V

Drain to Source On Resistance rDS(ON) ID = 60A, VGS = 10V (Figure 9) - 0.016 0.019 Ω

THERMAL SP EC I FICAT I ONS

Thermal Resistance Junction to Case RθJC (Figure 3) - - 1.03 oC/W

Thermal Resistance Junction to Ambient RθJA TO-247 - - 30 oC/W

TO-220, TO-263 - - 62 oC/W

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time tON VDD = 30V, ID ≅ 60A,

RL = 0.50Ω, VGS = 10V,

RGS = 6.8Ω

--130ns

Turn-On Delay Time td(ON) -9-ns

Rise Time tr-90- ns

Turn-Off Delay Time td(OFF) -50- ns

Fall Ti me tf-45- ns

Turn-Off Time tOFF --125ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 30V,

ID ≅ 60A,

RL = 0.50Ω

Ig(REF) = 1. 0mA

(Figure 13)

-7085nC

Gate Charge at 10V Qg(10) VGS = 0V to 10V - 40 50 nC

Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 2.5 3.0 nC

Gate to Source Gate Charge Qgs -6-nC

Reverse Transfer Capacitance Qgd -15-nC

HUF753 32 G3, H UF753 32P3, HUF75332S3S

CAPACITANCE SPECIFICATIONS

Input Capacitance CISS VDS = 25V, VGS = 0V,

f = 1M H z

(Figure 12)

- 1300 - pF

Output Capacitance COSS - 480 - pF

Reverse Transfer Capacitance CRSS - 115 - pF

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Sour ce to Drain Diode Specificatio ns

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNI TS

Source to Drain Diode Voltage VSD ISD = 60A - - 1.25 V

Reverse Recovery Time trr ISD = 60A, dISD/ dt = 100A/µs--75ns

Reverse Recovered Charge QRR ISD = 60A, dISD/dt = 100A/µs - - 140 nC

Typical Performance Curves

FIGURE 1. NORMALIZED PO WER DISSIPA TI ON vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TC, CASE TEMPERATURE (oC)

POWER DISSIPAT IO N MULTIPLIER

00 25 50 75 100 150

0.2

0.4

0.6

0.8

1.0

1.2

125 175

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

50 75 100 125 150 175

025

t, RECTANGULAR PULSE DURATION (s)

SINGLE PULSE

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

PDM

t1t2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.01

0.02

10-4 10-3 10-2 10-1 100101

10-5

0.1

0.01

ZθJC, NORMALIZED

THERMAL IMPEDANCE

HUF753 32 G3, H UF753 32P3, HUF75332S3S

FIGURE 4. PEAK CURRENT CAPABILITY

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fa irchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICS

Typical Performance Curves (Continued)

101

100

10-1

10-2

10-3

10-4

10-5

100

1000 TC = 25oC

I = I25 175 - TC

150

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 10V

IDM, PEAK CURRENT ( A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

100

500

10 100

11200

, DRAIN TO SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

= MAX RATED

= 25

100

10ms

1ms

DSS(MAX)

= 55V

LIMITED BY r

DS(ON)

AREA MAY BE

OPERATION IN THIS

STARTING TJ = 25oC

100

0.001 0.01 0.1 1 10

500

tAV, TIME IN AVALANCHE (ms)

IAS, AVALANCHE CURRENT (A)

STARTING TJ = 25oC

STARTING TJ = 150oC

tAV = (L)( IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R ≠ 0

tAV = (L/R)ln[ (IAS*R)/(1.3*RATED BVDSS - VDD) +1]

120

150

0 1.5 3.0 4.5 6.0 7.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs

TC = 25oC

ID, DRAIN CURRENT (A)

VGS = 5V

VGS = 6V

VGS = 10V

VGS = 7V

VGS = 20V

DUTY CYCLE = 0.5% MAX

120

150

0 1.5 3.0 4.5 6.0 7.5

VGS, GATE TO SOURCE VOLTAGE (V)

VDD = 15V

175oC

-55oC

25oC

ID, DRAIN CURRENT (A)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

HUF753 32 G3, H UF753 32P3, HUF75332S3S

FIGURE 9. NORMALIZED DRAIN T O SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE FIGURE 10. NORMALIZED GATE THRESHOLD VOLTA GE vs

JUNCTION TEMPERATURE

FIGURE 11. NORMALIZED DRAIN T O SOURCE BREAKDO WN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 12. CAPA CITANCE vs DRAIN T O SOURCE VOLTAGE

NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.

FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT

Typical Performance Curves (Continued)

1.0

1.5

2.0

2.5

-40 0 40 80 120 160 200

0.5-80

NORMALIZED DRAIN TO SOURCE

TJ, JUNCTION TEMPERATURE (oC)

ON RESISTANCE

PULSE DURATION = 80µs

VGS = 10V, ID = 60A

DUTY CYCLE = 0.5% MAX

0.8

1.0

1.2

-40 0 40 80 120 160 200

0.6-80

NORMALIZED GATE

TJ, JUNCTION TEMPERATURE (oC)

THRESHOLD VO LTAGE

VGS = VDS, ID = 250µA

1.0

1.1

1.2

-40 0 40 80 120 160 200

0.9-80

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

ID = 250µA

BREAKDOWN VOLTAGE

500

1000

1500

2000

0 102030405060

VDS, DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

CISS

COSS

CRSS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

10 20 30 40 50 600

VGS, GATE TO SOURCE VOLTAG E (V )

VDD = 30V

Qg, GATE CHARGE (nC)

ID = 60A

ID = 45A

ID = 30A

ID = 15A

WAVEFORMS IN

DESCENDING ORDER:

HUF753 32 G3, H UF753 32P3, HUF75332S3S

Test Circuits and Waveforms

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORM

FIGURE 18. SWITCHING TIME TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS +

VDS

VDD

DUT

IG(REF)

VDD

Qg(TH)

VGS = 2V

Qg(10)

VGS = 10V

Qg(TOT)

VGS = 20V

VDS

VGS

Ig(REF)

Qgs Qgd

VGS

RGS DUT

-VDD

VDS

VGS

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

HUF753 32 G3, H UF753 32P3, HUF75332S3S

PSPICE Electrical Model

.SUBCKT HUF75332 2 1 3 ; rev 17 February 1999

CA 12 8 1.8e-9

CB 15 14 1.73e-9

CIN 6 8 1.19e-9

DBODY 7 5 DBODYMOD

DBREAK 5 11 DBREAKMOD

DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 58.85

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 6 10 6 8 1

EVTHRES 6 21 19 8 1

EVTEM P 20 6 18 22 1

IT 8 17 1

LDRA IN 2 5 1e - 9

LGATE 1 9 1e-9

LSOURCE 3 7 1e-9

K1 LSOURCE LGA TE 0.0085

MMED 16 6 8 8 MMEDMOD

MSTRO 16 6 8 8 MSTROMOD

MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1

RDRAIN 50 16 RDRAINMOD 4.5e-3

RGATE 9 20 1.3

RLDRAIN 2 5 10

RLGATE 1 9 10

RLSOURCE 3 7 10

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

RSOURCE 8 7 RSOURCEMOD 5.95e-3

RVTHRES 22 8 RVTHRESMOD 1

RVTEMP 18 19 RVTEMPMOD 1

S1A 6 12 13 8 S1AM OD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

ESLC 51 50 VA LUE={(V(5 ,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),4.6))}

.MODEL DBODYMOD D ( IS = 1.3e-12 RS = 3.0e-3 IKF = 20 XTI = 6 TRS1 = 2.7e-3 TRS2 = 7.0e-7 CJO = 1.7e-9 TT = 4.0e-8 M = 0.45 vj = 0.75)

.MODEL DBREAKMOD D (RS = 1. 71e-2 IKF = 1.0e-5 TRS1 = -4.0e-4 TRS2 = -1.55e- 5)

.MODEL DPLCAPMOD D (CJO = 1.8e-9 IS = 1e-30 N = 1 M = 0.9 vj = 1.45)

.MODEL MMEDMOD NMOS (VTO = 3.183 KP = 2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.3)

.MODEL MSTROMOD NMOS (VTO = 3.66 KP = 51.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)

.MODEL MWEAKMOD NMOS (VTO = 2.70 3 KP = 0.008 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 13)

.MODEL RBREAKMOD RE S (TC1 = 1.0 5e-3 TC2 = 4.5e-7)

.MODEL RDRAINMOD RES (TC1 = 1. 16e-2 TC2 = 1.7e-5)

.MODEL RSLCMOD RES (TC1 = 3.96e- 3 T C 2 = 2.7e-6)

.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-5)

.MODEL RVTHRESMOD RES (TC1 = -2.8e-3 TC2 = -1.0e-5)

.MODEL RVTE MPMOD RES (TC1 = -2.75 e-3 TC2 = 5.0e-7)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8 VOFF= -3)

.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3 VOFF= -8)

.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 0.5)

.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= 0)

.ENDS

NOTE: For fur th er discussion of the PSPICE m odel, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Gl oba l

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

HUF753 32 G3, H UF753 32P3, HUF75332S3S

SABER Electrical Model

REV 17 Feb ruary 1999

template huf75332 n2 , n1, n3

electrical n2, n1, n3

{

var i iscl

d..model dbodymod = (is = 1.3e-12, xti = 6, cjo = 1.7e-9, tt = 4.0e-8, m = 0.45, vj = 0.75)

d..model dbreakmod = ()

d..model dplcapmod = (cjo = 1.8 e-9, is = 1e-30, m = 0.9, vj = 1.45)

m..model mmedmod = ( ty pe=_n, vto = 3.183, kp = 2, is = 1e-30, tox = 1)

m..model mstrongmod = (type=_n, vto = 3.66, kp = 51.5, is = 1e-30, tox = 1)

m..model mweakmod = (type=_n, vto = 2.703, kp = 8.0e-3, is = 1e-30, tox = 1)

sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8, voff = -3)

sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3, voff = -8)

sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 0.5)

sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = 0)

c.ca n12 n8 = 1.8e -9

c.cb n15 n14 = 1.73e-9

c.ci n n6 n8 = 1.19e-9

d.dbody n7 n71 = model=dbodymod

d.dbreak n72 n11 = model=dbreakmod

d.dplc ap n10 n5 = model=dplcapmod

i.it n8 n17 = 1

l.ldrain n2 n5 = 1.0e-9

l.lgate n1 n9 = 1.0e-9

l.lsou rce n3 n7 = 1.0e-9

k.kl i (l.lgate) i (l.lsource) = l (l.lgate), l (l.lsource), 0.0085

m.mmed n16 n6 n8 n8 = mod el=mmedmod, l = 1u, w = 1u

m.mstr ong n16 n6 n8 n8 = model=ms trongmod, l = 1u, w = 1u

m.mweak n16 n21 n8 n8 = model=mweak mod, l = 1u, w = 1u

res.rbreak n17 n18 = 1, tc1 = 1.05e-3, tc2 = 4.5e-7

res.rdbody n71 n5 = 3.0e -3, tc1 = 2.7e-3, tc 2 = 7.0e-7

res.rdbreak n72 n5 = 1.71e-2, tc1 = -4.0e-4, tc2 = -1 .55e-5

res.rdrain n50 n16 = 4.5e-3, tc1 = 1.16e-2, tc2 = 1.7e-5

res.rgate n9 n20 = 1.3

res.rldrain n2 n5 = 10

res.r l gate n1 n9 = 10

res.rlsource n3 n7 = 10

res.rslc1 n5 n51 = 1e-6, tc 1 = 3.96e-3, tc2 = 2. 7e-6

res.rslc2 n5 n50 = 1e3

res.rsource n8 n7 = 5.95e-3, tc1 = 1e -3, tc2 = 1e-5

res.rvtemp n18 n19 = 1, tc1 = -2.75 e-3, tc2 = 5.0e-7

res.rvthres n22 n8 = 1, tc 1 = -2.8e-3, tc2 = -1.0e-5

spe.e b reak n11 n7 n17 n18 = 58.85

spe.eds n14 n8 n5 n8 = 1

spe.egs n13 n8 n6 n8 = 1

spe.esg n6 n10 n6 n8 = 1

spe.evtemp n20 n6 n18 n22 = 1

spe.evthres n6 n21 n19 n8 = 1

sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod

sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod

sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod

sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc = 1

equa tions {

i (n51- >n50) + = iscl

iscl: v(n51,n50) = ((v(n5,n51)/(1e- 9+abs(v (n5,n51))))*((abs(v (n5,n51)*1e6/180))** 4.6))

}

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ISCL

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

RDBODY

RDBREAK

HUF753 32 G3, H UF753 32P3, HUF75332S3S

SPICE Thermal Model

REV 11February 1999

HUF75332

CTHERM1 th 6 4.00e-3

CTHERM2 6 5 7.00e-3

CTHERM3 5 4 7.50e-3

CTHERM4 4 3 8.00e-3

CTHERM5 3 2 1.85e-2

CTHERM6 2 tl 12.55

RTHERM1 th 6 7.09e-3

RTHERM2 6 5 1.77e-2

RTHERM3 5 4 4.97e-2

RTHERM4 4 3 2.79e-1

RTHERM5 3 2 4.21e-1

RTHERM6 2 tl 5.58e-2

SABER Thermal Model

SABER thermal mode l HUF75332

template thermal_model th tl

thermal_c th, tl

{

ctherm.ctherm1 th 6 = 4.00e-3

ctherm.ctherm2 6 5 = 7.00e-3

ctherm.ctherm3 5 4 = 7.50e-3

ctherm.ctherm4 4 3 = 8.00e-3

ctherm.ctherm5 3 2 = 1.85e-2

ctherm.ctherm 6 2 tl = 12.55

rtherm.rtherm1 th 6 = 7.09e-3

rtherm.rtherm2 6 5 = 1.77e-2

rtherm.rtherm3 5 4 = 4.97e-2

rtherm.rtherm4 4 3 = 2.79e-1

rtherm.rtherm5 3 2 = 4.21e-1

rtherm.rtherm6 2 tl = 5.58e-2

}

RTHERM4

RTHERM6

RTHERM5

RTHERM3

RTHERM2

RTHERM1

CTHERM4

CTHERM6

CTHERM5

CTHERM3

CTHERM2

CTHERM1

th JUNCTION

CASE

HUF753 32 G3, H UF753 32P3, HUF75332S3S

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

FAST

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

i-Lo™

ImpliedDisconnect™

Rev. I15

ACEx™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

F ACT Quiet Series™

POP™

Power247™

PowerEdge™

PowerSaver™

PowerTrench

QFET

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

SILENT SWITCHER

SMART ST ART™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic

TINYOPTO™

TruTranslation™

UHC™

UltraFET

UniFET™

VCX™

Across the board. Around the world.™

The Power Franchise

Programmable Active Droop™