DMN2400UV
Document number: DS31852 Rev. 7 - 2 1 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2kV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMN2400UV-7 SOT-563 3,000/Tape & Reel
DMN2400UV-13 SOT-563 10,000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-563
Top View Top View
Internal Schematic
ESD PROTECTED TO 2kV
Bottom View
S
1
D
1
D
2
S
2
G
1
G
2
24N YM
24N and NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
NAB YM
DMN2400UV
Document number: DS31852 Rev. 7 - 2 2 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±12 V
Continuous Drain Current (Note 4) Steady
State TA = 25°C
TA = 85°C ID 1.33
0.84 A
Pulsed Drain Current IDM 3 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) PD 530 mW
Thermal Resistance, Junction to Ambient R
θ
JA 233.8 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 20 - - V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 100 nA
VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS - - ±1.0
μA VGS = ±4.5V, VDS = 0V
- - ±50 VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
0.5 - 0.9 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON)
- 0.3 0.48
Ω
VGS = 5.0V, ID = 200mA
- 0.35 0.5 VGS = 4.5V, ID = 600mA
- 0.45 0.7 VGS = 2.5V, ID = 500mA
- 0.55 0.9 VGS = 1.8V, ID = 350mA
- 0.65 1.5 VGS = 1.5V, ID = 50mA
Forward Transfer Admittance |Yfs| - 1.4 - S
VDS = 10V, ID = 400mA
Diode Forward Voltage (Note 5) VSD 0.7 1.2 V VGS = 0V, IS = 150mA,
f = 1.0MHz
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance Ciss - 36.0 - pF VDS =16V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 5.7 - pF
Reverse Transfer Capacitance Crss - 4.2 - pF
Gate Resistance R
g
- 68 - Ω VDS = 0V, VGS = 0V,
Total Gate Charge Q
g
- 0.5 - nC VGS =4.5V, VDS = 10V,
ID =250mA
Gate-Source Charge Q
g
s - 0.07 - nC
Gate-Drain Charge Q
g
d - 0.1 - nC
Turn-On Delay Time tD
(
on
)
- 4.06 - ns
VDD = 10V, VGS = 4.5V,
RL = 47, RG = 10,
ID = 200mA
Turn-On Rise Time t
r
- 7.28 - ns
Turn-Off Delay Time tD
(
off
)
- 13.74 - ns
Turn-Off Fall Time tf - 10.54 - ns
Notes: 4. Device soldered onto FR-4 PCB, minimum recommended soldering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz Cu pad: 0.18mm2 x 6).
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subje c t to produ ct testing.
DMN2400UV
Document number: DS31852 Rev. 7 - 2 3 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
0
0.5
1.0
1.5
2.0
012345
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOL TAGE (V)
DS
I, D
AI
E
(A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
0.5
1.0
1.5
0 0.5 1 1.5 2 2.5 3
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
Fig. 2 Typical Transfer Characteristics
V , GA T E SOURCE VOLT AGE (V)
GS
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0
0.4
0.8
1.2
1.6
2.0
0 0.4 0.8 1.2 1.6 2
Fig. 3 Typical On-Resistance
vs . Dr ai n Cu r re nt and G at e Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 1.8V
GS
V = 4.5V
GS
V = 2.5V
GS
V = 1.5V
GS
V = 5.0V
GS
0
0.2
0.4
0.6
0.8
0 0.4 0.8 1.2 1.6
I , DRAIN CURRENT (A)
Fig . 4 Typical Drai n- S ource On- R esistance
vs. Drain Current and Temperature
D
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AIN-S
O
U
R
C
E
ON-RESI STANCE ( NO RM ALIZE D)
DS(ON)
V = 2.5.V
I = 500mA
GS
D
V = 4.5V
I = 1.0A
GS
D
0
0.2
0.4
0.6
0.8
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERA TURE (°C)
J
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
DMN2400UV
Document number: DS31852 Rev. 7 - 2 4 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
0
10
20
30
40
50
60
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOL TAGE (V)
DS
,
A
A
I
A
E (p
)
f = 1MHz
C
iss
C
oss
C
rss
0.1
1
10
100
1,000
2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Drain-Source Leakage Current
vs. D r ai n- So ur ce Volta ge
V , DRAIN-SOURCE VOL TAGE (V)
DS
I, D
AIN-S
E LEAKA
E
EN
(nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLT AGE (V)
GS
V = 10V
I = 250mA
DS
D
DMN2400UV
Document number: DS31852 Rev. 7 - 2 5 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 221°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Package Outline Dimensions
Suggested Pad Layout
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
A
M
L
BC
H
K
GD
X
Z
Y
C1
C2
C2
G
DMN2400UV
Document number: DS31852 Rev. 7 - 2 6 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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