SOT-23 Plastic-Encapsulate Transistors >> BC817-16/25/40LT1 TRANSISTOR (NPN) 1. BASE 2.EMITTER 3.COLLECTOR 3 Sy UNIT: mm mew Power dissipation Pom: 0.3 W (Tamb=25 ) Collector current Icm: O.5A Coliector-base voltage VBR)cBO:50V Operating:and storage junction temperature range Tu, Tstg :-65C to+ 150C ELECTRICAL CHARACTERISTICS (Tamp=25'C unless otherwise specified) : Parameter > : PS Coliector-base breakdown voltage ViBRICBO Ic=10nA, le=0 Collector-emitter breakdown voltage ViBR)CEO Ic=10mA, Is=0 45 Vv Emitter-base breakdown voltage V(BR)EBO le=1 LA, le=0 5 Vv Collector cut-off current IcBo VcB=45V le=0 0.1 BA Collector cut-off current IceEo Vce=40V,\s=0 0.2 pA Emitter cut-off current leEBO Ves=4V,ic=0mA 0.1 LA BC817-16 100 250 DC current gain BC817-25 Hre Vce=1V,ic=100mA 160 400 BC817-40 250 600 Collector-emitter saturation voltage VCEsat Ic=500mA,i8=50mA 0.7 Vv Base-emitter saturation voltage VeEsat Ic=500mA,IB=50mA 4.2 Vv Transition frequency fr Vce=5V ,ic=10mA,f=100MHz 100 MHz DEVICE MARKING : BC817-16LT1=6A; BC817-25LT1=6B; BC817-40LT1=6C 207Typical Characteristics Typical Pulsed Current Gain vs Collector Current z % 400 Z Vce= V 300 B # 200 mat > a z +00 a e 0.01 04 ic- COLLECTOR CURRENT (A) Base-Emitter Saturation s Voltage vs Collector Current ud p =10 ; 1 % 0.8 E a 0.6 na 4 a = 0.4 g > 1 : 10 100 1000 [,- COLLECTOR CURRENT (mA) MCC BC817-16,25,40LT1 Collector-Emitter Saturation Voltage vs Collector Current Qo o B =10 a b 2 ny ae eo Oo = 0.4 1445 ic- COLLECTOR CURRENT (A) Vcesat- COLLE CTOR-EMITTER VOLTAGE (V) w Gain Bandwidth Product vs Collector Current nN an Oo ce = 10V Nh Q Oo = n Oo g an Oo oa 4 hre- GAIN BANDWIDTH PRODUCT (MHz) 10 100 1000 tc- COLLECTOR CURRENT (mA) 208