© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 12
1Publication Order Number:
BC81716LT1/D
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage VCEO 45 V
Collector Base Voltage VCBO 50 V
Emitter Base Voltage VEBO 5.0 V
Collector Current Continuous IC500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
SOT23
CASE 318
STYLE 6
1
2
3
1
6x M G
G
6x = Device Code
x = A, B, or C
M = Date Code*
G=PbFree Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO 45 V
CollectorEmitter Breakdown Voltage
(VEB = 0, IC = 10 mA)
V(BR)CES 50 V
EmitterBase Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO 5.0 V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ICBO
100
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V) BC81716, SBC81716
BC81725, SBC81725
BC81740, SBC81740
(IC = 500 mA, VCE = 1.0 V)
hFE 100
160
250
40
250
400
600
CollectorEmitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat) 0.7 V
Base Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
VBE(on) 1.2 V
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT100 MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo 10 pF
ORDERING INFORMATION
Device Specific Marking Package Shipping
BC81716LT1G
6A SOT23
(PbFree)
3000 / Tape & Reel
BC81716LT3G 10,000 / Tape & Reel
SBC81716LT3
BC81725LT1G
6B SOT23
(PbFree)
3000 / Tape & Reel
SBC81725LT1G
BC81725LT3G 10,000 / Tape & Reel
SBC81725LT3G
BC81740LT1G
6C SOT23
(PbFree)
3000 / Tape & Reel
SBC81740LT1G
BC81740LT3G 10,000 / Tape & Reel
SBC81740LT3G
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
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3
TYPICAL CHARACTERISTICS BC81716L, SBC81716L
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
10.10.010.001
0.01
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
55°C
25°C
IC/IB = 10
150°C
55°C
25°C
0.4
0.9
IC/IB = 10
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
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4
TYPICAL CHARACTERISTICS BC81716L, SBC81716L
IB, BASE CURRENT (mA)
Figure 5. Saturation Region
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
0.1 1
1 10 100 1000
-2
-1
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
10 100
TJ = 25°C
IC = 10 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
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5
TYPICAL CHARACTERISTICS BC81725L, SBC81725L
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
55°C
25°C
IC/IB = 10
150°C
55°C
25°C
0.4
0.9
IC/IB = 10
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
10001010.1
10
100
fT
, CURRENTGAINBANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
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6
TYPICAL CHARACTERISTICS BC81725L, SBC81725L
IB, BASE CURRENT (mA)
Figure 13. Saturation Region
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 15. Capacitances
0.1 1
1 10 100 1000
-2
-1
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
10 100
TJ = 25°C
IC = 10 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
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7
TYPICAL CHARACTERISTICS BC81740L, SBC81740L
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
700
10.10.010.001
0.001
0.1
1
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
55°C
25°C
IC/IB = 10
150°C
55°C
25°C
0.4
0.9
IC/IB = 10
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
10001010.1
10
100
fT
, CURRENTGAINBANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
500
600
0.01
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
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8
TYPICAL CHARACTERISTICS BC81740L, SBC81740L
IB, BASE CURRENT (mA)
Figure 21. Saturation Region
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 22. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 23. Capacitances
0.1 1
1 10 100 1000
-2
-1
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
10 100
TJ = 25°C
IC = 10 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
http://onsemi.com
9
TYPICAL CHARACTERISTICS BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L,
SBC81740L
Figure 24. Safe Operating Area
1
VCE (Vdc)
10.1
0.1
0.01 10 100
0.01
0.001
IC (A)
Single Pulse Test @ TA = 25°C
Thermal Limit
100 ms
1 s 10 ms
1 ms
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
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10
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
BC81716LT1/D
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