SIEMENS Silicon Dual Schottky Diode Preliminary Data Features @ DBS mixer application to 12 GHz @ Low noise figure @ Low barrier type BAT 15-099 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code _ | Pin Configuration Package") (tape and reel) BAT 15-099 S5 Q62702-A66 4 : | P-SOT-143-4-6 o_f>f+-o 5 2 Kt EHAO7ON1 Maximum Ratings Parameter Symbol Values Unit Reverse voltage Va 4 Vv Forward current Ir 110 mA Power dissipation, 7s < 55 C Prot 100 mw Storage temperature range Tstg 55...+ 150 | C Operating temperature range Top 55...+ 150 Thermal Resistance Junction - ambient?! Rina < 1090 K/W Junction - soldering point Rinus < 930 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 270 01.97SIEMENS BAT 15-099 Electrical Characteristics per Diode at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Breakdown voltage Vier) 4 - - Vv In=5ypA Forward voltage Ve Ir= 1mA - 0.23 ~ Ir=10mMmA ~ 0.32 - Forward voltage matching AVe = - 20 mV le=10mA Diode capacitance Cr - - 0.35 pF Va = 0, f= 1 MHz Forward resistance Re - 5.5 ~ Q Je= 10 mAS0 mA Semiconductor Group 271SIEMENS BAT 15-089 Forward current Ir =f (Vr) Forward current Ir =f (7s; Ta*) *Package mounted on alumina 102 BAT 15-099 HD07079 140 BAT 15-099 EHDG7080 iP f | mA ma | 40! N 100 SR NN 80 NA 10 : WY. s) 60 4 N 40 N 1077 | 20 ~2 i 000 0.5 v1.0 % 50 100 C 150 Ve Reverse current Jr = f (Vr) 10 BAT 15-099 HO97081 te a OHA T= 125C 102 10! 10 ~t 10 0 1 2 3. VM 4 me Vp Semiconductor Group ae TT, Diode capacitance Cr = f (Vr) f=1MHz BAT 15-099 0.5 ERDO7082 a pF 0.4 0.3 0.2 0.1 0.0 272SIEMENS BAT 15-099 Su-Parameters Typical impedance characteristics (with external bias J and Zo = 50 9) tf T= 0.02 mA 1=0.05 mA 1=0.1mA 1=0.2mA 1=0.5 mA GHz |MAG| ANG MAG | ANG MAG | ANG MAG | ANG MAG | ANG 0.94 | - 16.4 /0.87 | 16.6 10.77 | - 164 [0.59 | - 17.2 /0.19 | - 16.7 0.93 | 33.8 |0.88 | 33.8 {0.77 | - 34.5 {0.58 | - 352/015 | 36.1 0.92 | - 53.8 /0.86 | - 54.5 10.75 | - 54.1 |0.58 | 56.1/0.13 | 648 0.91 | 74.3 |0.84 | 75.3 |0.72 | ~ 76.4 |0.51 | 78.4 [0.11 | - 104.8 0.91 | 96.6 {0.84 | ~ 97.6 |0.72 | - 99.1 [0.53 | - 102.3 10.15 | - 135.7 0.91 |-115.4 10.84 |-116.7 /0.73 |-118.7 |0.53 | - 122.9 [0.18 | - 160.9 0.91 |- 131.0 |0.84 | 132.3 |0.73 | 134.1 [0.54 | 138.1 [0.20 | 168.8 0.91 |- 143.0 |0.84 | - 144.5 |0.73 |-146.8 /0.55 | ~ 150.5 |0.81 | + 179.4 0.91 |- 155.6 /0.83 |- 150.2 |0.71 | ~ 159.7 [0.53 | - 163.9 10.18 | + 179.4 10 0.90 | - 167.3 [0.83 |- 169.7 |0.71 |-178.8 [0.51 | -175.8 |0.14 | + 151.2 11 0.89 |+ 175.5 |0.80 | +172.6 |0.70 | +170.0 [0.45 | + 164.9 |0.09 | + 105.5 12 0.88 | + 175.5 10.76 | + 146.5 |0.62 |} + 142.8 [0.39 | + 134.2 [0.14 | + 43.6 CON anh and Su=f ft EHOOTOSS Semiconductor Group 273