2. 30¡ À0. 05
1. 25¡ À0. 05
1.30¡À0.03
0.30
2.00¡À0.051.01 R
EF
SOT-323 Plastic-Encapsulated Diode
BAW56W SWITCHING DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IO: 150 mA
Collector-base voltage
VR: 75 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) R I
R= 100µA 75 V
Reverse voltage leakage current IR V
R=75V 2.5
µA
Forward voltage VF
IF=1 mA
IF=10 mA
IF=50 mA
IF=150mA
715
855
1000
1250
mV
Diode capacit a nce CD V
R=0V, f=1MHz 2 pF
Reveres recover y time trr IF=IR=10mA
Irr=0.1×IR 4 nS
Unit: mm
SOT-323
Mark ing: KJC
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