MEMORY & STORAGE INTEL CORPORATION High Integration Boot Block 2-, 4- and 8-Mbit Family 3.3V SmartVoltage Technology 2-, 4- and 8-Mbit X8 or X8/X16 JEDEC-Standard Configuration Footprint Upgradable From 2 Mbit Through 8 Mbit SmartVoltage Technology - Voltage Flexibility - 3.3V Low Power Read - Superior Single 5V Read/Write Performance - Future 2.7V Read Option 60% Faster Programming Performance Over 5V Only - Lower Throughput Time - Lower Manufacturing Costs High Performance Read - 60ns at 5V - 110ns at 3.3V Superior Byte Write Performance For EEPROM Emulation Absolute Hardware Write Protection With Vpp =0 Automated Algorithm For User Transparent Erase/Program Reset and Deep-Powerdown Mode (0.2A Typical) Widely-Sourced Packaging and Architecture Optimized Memory Block Architecture - Ideal For ROM, EEPROM and Bulk Flash EPROM Integration For Embedded Application Intel's advanced SmartVoltage 2-, 4- and 8-Mbit flash memories offer users optimal benefits in a mid-density flash. Using a cost-effective and highly advanced process technology, the SmartVoltage 2-, 4- and 8-Mbit products offer new capabilities in establishing a standard in flash memory. You can choose among read/write voltages, X8 or X8/X16 data bus, hardware reset, high performance read access, transparent automated erase/program algorithms and absolute write protection. The SmartVoltage 2-, 4- and 8-Mbit memory architecture is ideal for integrating boot ROM, EEPROM-like parameter storage and bulk flash code storage-with optimized memory blocks for each need. Designers can incorporate this tuned architecture in a selection of footprint compatible densities, including 2 Mbit, 4 Mbit and 8 Mbit (mid-95). The industry today demands flash memory products that have advanced features, are cost effective, and deliver flexibility and ease of use. Intel delivers these capabilities in 40-pin and greater TSOP and PSOP packages. Plus, only Intel offers voltage options for standard 5V read, down to 3.3V read for low-power current and future needs in one product offering at no price premium. In addition, Intel offers high-throughput efficiency in manufacturing with 12V programming, and simplicity of board design with 5V writes. Intel's SmartVoltage 2-, 4- and 8-Mbit provide high integration for spaceconstrained embedded applications, low voltage for portable applications, and absolute block locking for easy system recovery in PC BIOS applications. 184 C O N TA C T: Local Intel Sales Office WWW: http://www.intel.com/embedded/ MEMORY & STORAGE INTEL CORPORATION Features Benefits - 3.3V low-power read option - Reduces system power consumption, increased thermal reliability - 5V single voltage mode - Easier board design - 60% faster programming than restrictive - Lower volume programming and manufacturing costs as a result 5V-only products of higher throughput - One socket for 2-, 4-, 8-Mbit - No board changes for code expansion - Widely-sourced packaging and architecture - Multiple supply sources and future protection from obsolescence - Backward compatibility - Seamless transition from current 12V write/5V read Flash products - EEPROM emulation - Integrate EEPROM functionality on chip in selected applications - Automated algorithm for erase/write - Minimal software overhead and "learning curve" for Intel Flash memory A18 A17 8-Mbit Upgrade Address 4-Mbit Upgrade Address VPP WP# NC A7 A6 A5 A4 A3 A2 A1 A0 CE# GND OE# DQ0 DQ8 DQt DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PA28F200 44 Lead PSOP 0.525" X 1.110 TOP VIEW 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RP# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# GND DO15/A1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC New Previous CPU CPU Boot ROM EEPROM Bulk Erase Flash Boot ROM EEPROM Bulk Erase Flash 28F200/28F400 RAM RAM I/O I/O 28F200BV/28F400BV integrates EEPROM, Boot ROM and Bulk Erase Flash Pinout Diagram for 44-lead PSOP (40-, 48-, 56-lead TSOP also available) 185