BL Galaxy Electrical Production specification
NPN General Purpose Transistor MMBT5551
Document number: BL/SSSTC065 www.galaxycn.com
Rev.A 1
FEATURES
z Epitaxial planar die construction. Pb
Lead-free
z Complementary PNP type available
(MMBT5401).
z Also available in lead free version.
APPLICATIONS
z Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT5551 G1 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
VCBO collector-base voltage 180 V
VCEO collector-emitter voltage 160 V
VEBO emitter-base voltage 6 V
ICcollector current (DC) 0.6 A
PCCollector dissipation 0.3 W
Tj ,Tstg junction and storage temperature -55-150 °C
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0 180
V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA,IB=0 B160
V(BR)EBO Emitter-base breakdown voltage IE=100μA,IC=0 6
ICBO collector cut-off current IE = 0; VCB = 180V - 0.1 μA
IEBO emitter cut-off current IC = 0; VEB = 4V - 0.1 μA
hFE DC current gain
VCE = 5V; IC= 1mA
VCE = 5V;IC = 10mA
VCE = 5V;IC = 50 mA
80
80
30
-
250
-
VCE(sat) collector-emitter saturation voltage IC = 50 mA; IB = 5 mA B- 0.5 V
VBE(sat) base-emitter saturation voltage IC = 50 mA; IB = 5 mA B- 1 V
fTtransition frequency IC = 10mA; VCE = 10V;
f = 100MHz 80 - MHz