BSS63A
High-voltage Amplifier Transistor
(-100V,-100mA)
Datasheet
llOutline
Parameter Value   SOT-23  
   
VCEO -100V   
IC-100mA   
SST3  
llFeatures ll Inner circuit
1)High breakdown voltage. (BVCEO=-100V)
2)Complements the BSS64A.
llApplication
HIGH VOLTAGE AMPLIFIER
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
BSS63A SOT-23
(SST3) 2924 T116 180 8 3000 K8N
                                              
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© 2019 ROHM Co., Ltd. All rights reserved. 1/6 20190410 - Rev.001
    Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Collector-base voltage VCBO -110 V
Collector-emitter voltage VCEO -100 V
Emitter-base voltage VEBO -6 V
Collector current IC-100 mA
ICP*1 -200 mA
Power dissipation PD*2 200 mW
PD*3 350 mW
Junction temperature Tj150
Range of storage temperature Tstg -55 to +150
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Collector-base breakdown
voltage BVCBO IC = -10μA -110 - - V
Collector-emitter breakdown
voltage BVCEO IC = -1mA -100 - - V
Emitter-base breakdown voltage BVEBO IE = -10μA -6 - - V
Collector cut-off current ICBO
VCB = -90V - - -100 nA
VCB = -90V, Ta = 150- - -50 μA
Emitter cut-off current IEBO VEB = -6V - - -100 nA
Collector-emitter saturation voltage VCE(sat)1 IC = -25mA, IB = -2.5mA - -100 -230 mV
VCE(sat)2 IC = -100mA, IB = -10mA - -230 -500 mV
Base-emitter saturation voltage VBE(sat) IC = -25mA, IB = -2.5mA - -750 -900 mV
Base-emitter turn
on voltage VBE(on) VCE = -6V, IC = -1mA -580 - -800 mV
DC current gain hFE1 VCE = -1V, IC = -10mA 30 - - -
hFE2 VCE = -1V, IC = -25mA 30 - -
Transition frequency fT VCE = -5V, IE = 25mA,
f = 100MHz - 200 - MHz
Output capacitance Cob VCB = -10V, IE = 0A
f = 1MHz - 3.5 5.0 pF
*1 Pw=10ms,Single pulse.
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board (7.0×5.0.6mm).
                                                                                       
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© 2019 ROHM Co., Ltd. All rights reserved. 2/6 20190410 - Rev.001
BSS63A     Datasheet
llElectrical characteristic curves(Ta = 25°C)
Fig.1 Ground Emitter Propagation
    Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
    Current (I)
Fig.4 DC Current Gain vs. Collector
    Current (II)
                                               
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© 2019 ROHM Co., Ltd. All rights reserved. 3/6 20190410 - Rev.001
BSS63A     Datasheet
llElectrical characteristic curves(Ta = 25°C)
Fig.5 Collector-Emitter Saturation
    Voltage vs. Collector Current (I)
Fig.6 Collector-Emitter Saturation
    Voltage vs. Collector Current (II)
Fig.7 Base-Emitter Saturation Voltage
    vs. Collector Current
Fig.8 Gain Bandwidth Product vs.
    Emitter Current
                                               
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© 2019 ROHM Co., Ltd. All rights reserved. 4/6 20190410 - Rev.001
BSS63A     Datasheet
llElectrical characteristic curves(Ta = 25°C)
Fig.9 Collector Output Capacitance
    vs. Collector-Base Voltage
Fig.10 Safe Operating Area
                                               
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© 2019 ROHM Co., Ltd. All rights reserved. 5/6 20190410 - Rev.001
BSS63A     Datasheet
llDimensions
                                               
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© 2019 ROHM Co., Ltd. All rights reserved. 6/6 20190410 - Rev.001
Notice-PGA-E Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
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Precaution for Mounting / Circuit board design
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Notice-PGA-E Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
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DatasheetDatasheet
Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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