LESHAN RADIO COMPANY, LTD.
BC817-16WT1–1/2
1
3
2
General Purpose Transistors
Preferred Device
BC817-40YLT1 is LRC
BC817-16WT1
CASE 419-02, STYLE 2
SOT-323 (SC-70)
2
EMITTER
3
COLLECTOR
1
BASE
NPN Silicon
MAXIMUM RATINGS
Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO
5V
Collector current-continuoun IC 500 mAdc
THERMAL CHARATEERISTICS
Symbol Max Unit
Total Device Dissipation FR-5 Board, (1) PD
225 mW
1.8 mW/oC
Thermal Resistance, Junction to Ambient RθJA 556 oC/W
PD
300 mW
2.4 mW/oC
Thermal Resistance, Junction to Ambient RθJA 417 oC/W
Junction and Storage Temperature Tj ,Tstg -55 to +150 oC
DEVICE MARKING
BC817-16WT1=6A
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1) V(BR)CEO 45 - - V
(IC=10mA)
Collector-Emitter Breakdown Voltage V(BR)CES 50
(IC=10µ A)
Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V
(IE=10µ A)
Collector Cutoff Current (VCB=30V) ICBO - - 100 nA
Emitter Cutoff Current (VBE=7V) IEBO 100 nA
Characteristic
Total Device Dissipation
Derate above 25oC
Rating
TA=25oC
Derate above 25oC
Alumina Substrate, (2) TA=25 oC
Characteristic
LESHAN RADIO COMPANY, LTD.
BC817-16WT1–2/2
ON CHARACTERISTICS
DC Current Gain (1) Hfe1 100 - 250
(IC=100mA, VCE=1.0V)
DC Current Gain (1) Hfe2 40 - -
(IC=500mA, VCE=1.0V)
Collector-Emitter Saturation Voltage (1) VCE(SAT) - - 0.7 V
(IC=500mA,IB=50mA)
Base-Emitter On Voltage (1) VBE(ON) - - 1.2 V
IC=300mA,VCE=1.0V)
300µSec.,Duty cycle 2.0%
BC817-16WT1
(1) Note: Pulse width
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product f T100 – – MHz
(IC =10mA, VCE =Vdc, f =100MHz)
Output Capacitance Cobo –10– pF
(VCB=10V, f =1.0MHz)
