PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. * Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223 B Mark:1P EBC C B Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC TSTG Collector Current Operating and Storage Junction Temperature Range 1.0 A - 55 ~ 150 C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25C unless otherwise noted Symbol Max. Parameter PN2222A *MMBT2222A **PZT2222A Total Device Dissipation Derate above 25C 625 5.0 350 2.8 1,000 8.0 RJC Thermal Resistance, Junction to Case 83.3 RJA Thermal Resistance, Junction to Ambient 200 PD Units mW mW/C C/W 357 C/W 125 * Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06". ** Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6cm2. (c) 2010 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / PZT2222A Rev. A3 www.fairchildsemi.com 1 PN2222A / MMBT2222A / PZT2222A -- NPN General Purpose Amplifier August 2010 Symbol Ta = 25C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 IC = 10A, IE = 0 BV(BR)CBO Collector-Base Breakdown Voltage 40 V 75 V BV(BR)EBO Emitter-Base Breakdown Voltage 6.0 V IE = 10A, IC = 0 ICEX Collector Cutoff Current VCE = 60V, VEB(off) = 3.0V ICBO Collector Cutoff Current VCB = 60V, IE = 0 VCB = 60V, IE = 0, Ta = 125C IEBO Emitter Cutoff Current Base Cutoff Current IBL 10 nA 0.01 10 A A VEB = 3.0V, IC = 0 10 nA VCE = 60V, VEB(off) = 3.0V 20 nA On Characteristics hFE DC Current Gain IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 10mA, VCE = 10V, Ta = -55C IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1V * IC = 500mA, VCE = 10V * 35 50 75 35 100 50 40 VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VBE(sat) Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.6 IC = 20mA, VCE = 20V, f = 100MHz 300 300 0.3 1.0 V V 1.2 2.0 V V Small Signal Characteristics fT Current Gain Bandwidth Product MHz Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8.0 pF Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 25 pF rb'Cc Collector Base Time Constant IC = 20mA, VCB = 20V, f = 31.8MHz 150 pS Noise Figure IC = 100A, VCE = 10V, RS = 1.0K, f = 1.0KHz 4.0 dB Real Part of Common-Emitter High Frequency Input Impedance IC = 20mA, VCE = 20V, f = 300MHz 60 VCC = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA 10 ns 25 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 225 ns 60 ns NF Re(hie) Switching Characteristics td Delay Time tr Rise Time ts Storage Time tf Fall Time * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c) 2010 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / PZT2222A Rev. A3 www.fairchildsemi.com 2 PN2222A / MMBT2222A / PZT2222A -- NPN General Purpose Amplifier Electrical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 125 C 300 200 25 C 100 - 40 C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 25 C 0.1 = 10 - 40 C 25C 125 C 0.6 0.4 1 10 100 I ICC - COLLECTOR CURRENT (m A) 1 500 1 VCE = 5V 0.8 25 C 0.6 125 C 0.4 0.2 0.1 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 1 10 I ICC - COLLECTOR CURRENT (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 500 CB - 40 C Figure 4. Base-Emitter On Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature V 500 Base-Emitter ON Voltage vs Collector Current Figure 3. Base-Emitter Saturation Voltage vs Collector Current 100 10 100 I C - COLLECTOR CURRENT (mA) Figure 2. Collector-Emitter Saturation Voltage vs Collector Current Base-Emitter Saturation Voltage vs Collector Current 0.8 - 40C V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT- BASE-EMITTER VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current 1 125C 0.2 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (C) 150 0.1 100 Figure 6. Emitter Transition and Output Capacitance vs Reverse Bias Voltage Figure 5. Collector Cutoff Current vs Ambient Temperature (c) 2010 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / PZT2222A Rev. A3 1 10 REVERSE BIAS VOLTAGE (V) www.fairchildsemi.com 3 PN2222A / MMBT2222A / PZT2222A -- NPN General Purpose Amplifier Typical Performance Characteristics (Continued) Switching Times vs Collector Current Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = 400 Ic V cc = 25 V TIME (nS) TIME (nS) V cc = 25 V 240 160 240 ts 160 tr t off tf 80 80 t on 0 10 td 100 I CIC - COLLECTOR CURRENT (mA) 0 10 1000 Figure 7. Turn On and Turn Off Times vs Collector Current CHAR. RELATIVE TO VALUES AT I C= 10mA PD - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 2 h re CHAR. RELATIVE TO VALUES AT VCE= 10V Common Emitter Characteristics V CE = 10 V I C = 10 mA h ie h fe 1.6 h oe 1.2 0.8 0.4 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 Figure 11. Common Emitter Characteristics Common Emitter Characteristics 8 V CE = 10 V T A = 25oC 6 h oe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 Common Emitter Characteristics 1.3 I C = 10 mA T A = 25oC 1.25 h fe 1.2 1.15 h ie 1.1 1.05 1 h re 0.95 0.9 0.85 h oe 0.8 0.75 0 5 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 Figure 12. Common Emitter Characteristics (c) 2010 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / PZT2222A Rev. A3 1000 Figure 10. Common Emitter Characteristics Figure 9. Power Dissipation vs Ambient Temperature 2.4 100 I CIC - COLLECTOR CURRENT (mA) Figure 8. Switching Times vs Collector Current Power Dissipation vs Ambient Temperature CHAR. RELATIVE TO VALUES AT TA = 25oC 10 320 320 0 Ic I B1 = I B2 = 10 www.fairchildsemi.com 4 PN2222A / MMBT2222A / PZT2222A -- NPN General Purpose Amplifier Typical Performance Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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