BDX53B / BDX53C
BDX54B / BDX54C
C OMPLEM ENTARY SIL ICON POWER
DARLINGTON TRANSISTORS
■STMicr oelectronics PREFERRED
SALESTYPES
APPLIC A TION S
■AUD I O AMPLI F IER S
■LINEAR AND SWIT CHING INDUSTRIA L
EQUIPMENT
DESCRIP TION
The BDX53B and BDX53C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plast ic package. They are intented
for use in hammer drivers, audio amplifiers and
other medium power linear and switching
applications.
The complementary PNP types are BDX54B and
BDX54C respectively.
®
INTERNAL SCHE MATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDX53B BDX53C
PNP BDX54B BDX54C
VCBO Collector-Base Vo ltage (I E = 0) 80 100 V
VCEO Collector-Emitter Voltage (IB = 0) 80 100 V
VEBO Emitter-base Voltage (IC = 0) 5 V
ICCollector Current 8 A
ICM Collector Peak Current (repetitive ) 12 A
IBBase Current 0.2 A
Ptot Total Dissipation at Tc ≤ 25 oC60 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperatu re 150 oC
For PNP types volta ge and current values are negative.
123
TO-220
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
1/6
THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 2.08
70
oC/W
oC/W
ELECT RICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) for BDX53B/54B VCB = 80 V
for BDX53C/54C VCB = 100V 0.2
0.2 mA
mA
ICEO Collector Cut-off
Current (IB = 0) for BDX53B/54B VCE = 40 V
for BDX53C/54C VCE = 50V 0.5
0.5 mA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V
2mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA for BDX53B/54B
for BDX53C/54C 80
100 V
V
VCE(sat)∗Collector-emitter
Saturation Voltage IC = 3 A IB =12 mA 2 V
VBE(sat)∗Base-emitter
Saturation Voltage IC = 3 A IB =12 mA 2.5 V
hFE∗DC Current Gain IC = 3 A VCE = 3 V 750
VF∗Parallel-diode Forward
Voltage IF = 3 A
IF = 8 A 1.8
2.5 2.5 V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area Derating Curve
BDX53B - BDX53C - BDX54B - BDX54C
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DC Current Gain (NP N type)
Collector Emitter Saturation Volt age (NPN type)
Base Emitter Saturation V oltage (NPN type)
DC Current Gain (P NP type)
Collector Em itt er Saturation Voltage (PNP type)
Base Emitter Saturation V oltage (PNP type)
BDX53B - BDX53C - BDX54B - BDX54C
3/6
Base Emitter On V oltage (NPN type)
Freewheel Diode Forward Voltage (NPN type)
Base Emitter On V oltage (PNP type)
Freewheel Diode Forward Voltage (P NP type)
Switching Time Resistive Load (NPN type) Switching Time resistive Load (P NP type)
BDX53B - BDX53C - BDX54B - BDX54C
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHA NICAL D ATA
BDX5 3B - BDX53C - BDX54B - BDX54C
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BDX53B - BDX53C - BDX54B - BDX54C
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