Microchip 27C512 512K (64K x 8) CMOS EPROM FEATURES High speed performance 90ns access time available CMOS Technology for low power consumption 35mA Active current 100pA Standby current Factory programming available Auto-insertion-compatible plastic packages Auto ID aids automated programming High speed express programming algorithm Organized 64K x 8: JEDEC standard pinouts 28-pin Dual-in-line package 32-pin Chip carrier (ieadless or plastic) 28-pin SOIC package 28-pin TSOP Tape and reel Available for the following temperature ranges: Commercial: 0 C to 70 C Industrial: -40 C to 85 C Automotive: -40 C to 125 C DESCRIPTION The Microchip Technology inc. 27C512 is a CMOS 512K bit (electrically) Programmable Read Only Memory. The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplishedinlessthan90ns. This very high speed device allows the most sophisticated microprocessors to run at full speed without the need for WAIT states. CMOS design and processing enables this part to be used in systems where reduced power consumption and high reliability are requirements. Acomplete family of packages is offered to provide the most flexability in applications. For surface mount applications, PLCC or SOIC packaging is available. Tape or reel packaging is also available for PLCC or SOIC packages. UV erasable versions are also avail- abie. 2458888 858e<2 PIN CONFIGURATIONS RRSaLaNSRSEE SE Top View A15 Ct 28134 Veco Al2 C2 275 a4 a7 O43 2655 A13 AB C4 2573 AB as 45 2415 Ag A4 C6 235 att a3 co? 22/73 OE /Vre a2 c48 21F 5 ato Al case 20/4 CE AO (410 19I5 07 OO C411 181-4 06 or C12 17/24 05 02 C13 16624 04 Vss C414 15-4 03 PLCC/LCC DIP/SOIC HAM TMOR aareNet DOU OOOO trQeaor wNroenrg Set gaS geeeeee int ie TSOP 1993 Microchip Technology inc. 8-25 DS11006J-page 127C512 PIN FUNCTION TABLE ELECTRICAL CHARACTERISTICS . Rati * Name Function Maximum ' Vcc and input voltages w.r.t. VSS.......... -0.6V to +7.25V AQ - AIS Address Inputs Vp voltage w.r.t. Vss during CE Chip Enable PFOQFAMIMING ......scecsesssesseesseessecsteseeees -0.6V to +14.0V OE/VpP Output Enable/ Voltage on AQ w.r.t. Vss.. .-0.6V to +13.5V Programming Voltage Output voltage w.r.t. Vss .-0.6V to Vcc + 1.0V vo 07 aia wor Supply Storage temperature 00.0... eee -65 C to 150 C + : . : . Vss Ground Ambient temp. with power applied .....-65 C to 125 C NC No Connection; No Internal Notice: Stresses above those listed under Maximum Ratings Connection may cause permanent damage to the device. This is a stress NU Not Used; No External rating only and functional operation of the device at those or any Connection Is Allowed other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. READ OPERATION Voc = +5V 10% pc Characteristics Commercial: Tamb= 0Cto 70C Industrial: Tamb= -40 C to 85 C Extended (Automotive): Tamb= -40 C to 125 C Parameter Part* Status Symbol Min Max |Units| Conditions Input Voltages all Logic "1" VIH 2.0 Vec+1 | V Logic "0" Vit -0.5 0.8 Vv Input Leakage all Mu -10 10 HA | VIN=0 to Vcc Output Voltages all Logic "1" VOH 2.4 Vv IOH = -400pA Logic "0" VoL 0.45 V_ | loL=2.1mA Output Leakage all ILo -10 10 HA |} VouT= OV to Vcc Input Capacitance all CIN 6 pF | VIN= OV; Tamb = 25 C; f = 1MHz Output Capacitance all CouT 12 pF | VouT=0V;Tamb= 25 C; f = 1MHz Power Supply Current, Cc TTL input Icc 35 mA | Vcc = 5.5V Active |,E | TTLinput lec 45 mA | f=1MHz;__ OE/Vep= CE = Vit lout = OmA; ViL= -0.1 to 0.8 V; VIH= 2.0 to Vcc; Note (1) Power Supply Current, | C | TTLinput | lIecisjm 2 mA Standby LE TTL input Icc(s)TTL 3 mA) C | CMOS input | Icc(s)cmos 100 wA | CE = Vcc +0.2V * Parts: C = Commercial Temperature Range; |, E = Industrial and Extended Temperature Ranges Notes: (1) Active current increases 2 mA per MHz up to operating frequency for all temperature ranges. DS11006J-page 2 8-26 1993 Microchip Technology inc.27C512 READ OPERATION AC Testing Waveform: = ViH= 2.4V and Vi_= .45V; VOH = 2.0V and VoL = 0.8V AC Characteristics Output Load: 1 TTL Load + 100pF Input Rise and Fall Times: 10nsec Ambient Temperature: Commercial: Tamb= 0 Cto 70C Industrial: Tamb = -40 C to 85 C Extended (Automotive): Tamb = -40 C to 125 C Parameter Sym) 27C51 2-9)27C81 2-187C512-11227C512-1 627051 2-20 Units| Conditions Min | Max| Min | Max| Min |Max} Min | Max] Min | Max Address to Output | tacc 90 100 120 150 200 ns | CE =OE/Vee=ViL Delay CEto Output Delay | tce 90 100 120 150 200] ns | OE/Vep=ViL OE to Output Delay | toe 40 40 50 60 75 | ns | CE=Vi OE to Output High |torF} 0 | 35] 0 | 35] 0 | 40] 0 | 45] 0 | 55] ns Impedance Output Hold from toH | 0 0 0 0 0 ns Address, CE or OE/Vep, whichever occured first *-90 AC Testing Waveform: VIH= 2.4V and Vit = .45V; VoH = 1.5V and VoL = 1.5V Output Load: 1 TTL Load + 30pF READ WAVEFORMS VIH le Address >< Address Valid S m DF we (2) 6.5 V (3) Y 7 Vec ; 5.0V at TCS >} + 1) ht PW] (2) __ VIH _ CE 4 VIL N. _e _/ toR > __ 13.0 V (3) OE/Vee / VIL -- Notes: (1) The input timing reference level is 0.8 V for Vit and 2.0 V for VI (2) tOF and toe are characteristics of the device but must be accommodated by the programmer. (3) Vcc = 6.5 V +0.25 V, VeP = VH = 13.0 V +0.5 V for express programming algorithm. MODES Read Mode Operation Mode | CGE | Geyer | Ag | 00-07 (See Timing Diagrams and AC Characteristics) Read Vit Vii xX DouT Read Mode is accessed when Program ViL VH X Din Program Verify ViL ViL xX Dout AE nin: : Program Inhibit via | Vi X High Z a) the CE pin is low to power up (enable) the chip Standby Vin | X xX High Z __ Output Disable vi | Vin x High Z b) the OE/Ver pin is low to gate the data to the Identity Vit Vit Vu Identity Code output pins. X = Don't Care For Read operations, if the addresses are stable, the address access time (tACc) is equal to the delay from CE to output (tce). Data is transferred to the output after a delay (toe) from the falling edge of OE/Vpp. 1993 Microchip Technology Inc. 0S11006J-page 5 8-29270512 Standby Mode The standby mode is defined when the CE pin is high and a program mode is not identified. When this condition is met, the supply current will drop from 35mA to 100pA. Qutput Enable OE/Vpp This multifunction pin eliminates bus connection in mul- tiple bus microprcessor systems and the outputs go to high impedance when: + the OE/Vep pin is high (Vin). When a VH input is applied to this pin, it supplies the programming voltage (VPP) to the device. Er M in rsion: Windowed products offer the ability to erase the memory array. The memory matrix is erased to the alt 1's state as a result of being exposed to ultraviolet light. To ensure complete erasure, a dose of 15 watt-second/cm? is required. This means that the device window must be placed within one inch and directly underneath an ultra- violet lamp with a wavelength of 2537 Angstroms, inten- sity of 12,000uW/cm? for approximately 20 minutes. Programming M The Express algorithm has been developed to improve on the programming throughput times in a production environment. Up to 10 100-microsecond pulses are applied until the byte is verified. A flowchart of the Express algorithm is shown in Figure 1. Programming takes place when: a) Vcc is brought to the proper voltage, b) OE/Vpr is brought to the proper V# level, and c) CE line is low. Since the erased state is 1 in the array, programming of O is required. The address to be programmed is set via pins AO - A15 and the data to be programmed is presented to pins O0 - O07. When data and address are stable, a low going pulse on the CE line programs that location. Verify After the array has been programmed it must be verified to ensure ail the bits have been correctly programmed. This mode is entered when all the following conditions are met: a) Vcc is at the proper level, b) the OE/Vpr pin is low, and c) the CE line is low. Inhibi When programming multiple devices in parallel with different data, only CE needs to be under separate control to each device. By pulsing the CE line low ona particular device, that device will be programmed; all other devices with CE held high will not be programmed with the data (although address and data will be avail- able on their input pins). Identity M In this mode specific data is output which identifies the manufacturer as Microchip Technology Inc and the device type. This mode is entered when Pin A9 is taken to VH (11.5V to 12.5V). The CE and OE/VPr lines must be at Vit. AO is used to access any of the two non- erasable bytes whose data appears on O0 through 07. Pin Input Output Identity AO |}O;O;/ 0; O}0O/0/0)/0]H 71/6, 5} 4}/3/2])/1/0];e x Manufacturer| Vii |0/)0!1;0)1/0/0]1 |29 Device Type*| ViH | 0/0) 0); 0)1/1/0;1 10D * Code subject to change. DS11006J-page 6 8-30 1993 Microchip Technology Inc.270512 Conditions: Tamb = 25 C +5 C Vec = 6.5 +0.25V Vpp = 13.0 +0.25V PROGRAMMING - FIGURE 1 EXPRESS ALGORITHM ADDR = First Location Vcc = 6.5V Vep = 13.0V X=0 -|Program one 100 ysec pulse Increment X Yes (a) (a) - Last Address? Yes Increment Address Vcc = VpP = 4.5V, 5.5V Alt Device \ Yes No / Device Passed Failed bytes = original data? 1993 Microchip Technology Inc. 8-31 DS11006J-page 7270512 SALES AND SUPPORT To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed sales offices. PART NUMBERS 270512 -25 1/P Package: Cerdip Ceramic Leadless Chip Carrier Plastic Leaded Chip Carrier Plastic DIP Plastic SOIC TSOP 4 HOUrKe Temperature - oC to 70C Range: ( -40C to 85C E -40C to 125C Access Time: 90 90 nsec 10 100 nsec 12 120 nsec 15 150 nsec 20 200 nsec === Device: 27C512 512K (64K x 8) CMOS EPROM DS11006J-page 8 1993 Microchip Technology Inc. 8-32