Copyright 2002 Semicoa Semiconductors, Inc.
Rev. C 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N5004
Silicon NPN Transisto
r
Data Sheet
Description
Complement to the 2N5005
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5004J)
• JANTX level (2N5004JX), or
• JANTXV level (2N5004JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• High-speed power-switching
• Power Transistor
• NPN silicon transistor
Features
• Hermetically sealed TO-59 metal can
• Also available in chip configuration
• Chip geometry 9202
• Reference document:
MIL-PRF-19500/534
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 80
Volts
Collector-Base Voltage VCBO 100
Volts
Emitter-Base Voltage VEBO 5.5
Volts
Collector Current, Continuous IC 5
A
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 2
11.4
W
mW/°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C PT 58
331
W
mW/°C
Thermal Resistance RθJA
RθJC
88
3 °C/W
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. C 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N5004
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 100 mA 80 Volts
Collector-Emitter Cutoff Current ICEO V
CE = 40 Volts 50 µA
Collector-Emitter Cutoff Current ICEX VCE = 60 Volts, VEB = 2 Volts,
TA = 150°C 500
µA
Collector-Emitter Cutoff Current ICES1
ICES2
VCE = 60 Volts
VCE = 100 Volts
1
1
µA
mA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 4 Volts
VEB = 5.5 Volts
1
1 mA
Thermal Impedance θJC 10
°C/W
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
50
70
40
25
200
Base-Emitter Voltage VBE V
CE = 5 Volts, IC = 2.5 A 1.45 Volts
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
1.45
2.20 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
0.75
1.50 Volts
Small Signal Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 500 mA,
f = 10 MHz 7
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 5 Volts, IC = 100 mA,
f = 1 kHz 50
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 250
pF
Switching Characteristics
Saturated Turn-On Time
Rise Time
Fall Time
Saturated Turn-Off Time
tON
tr
tf
tOFF
IC = 5 A, IB1=IB2 = 500 mA,
VBE = 3.7 Volts, RL = 6 Ω
0.5
1.4
0.5
1.5
µs