PN2222A/MMBT2222A/PZT2222A NPN General Purpose Amplifier * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. * Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Absolute Maximum Ratings * T a Symbol SOT-223 B Mark:1P EBC C B = 25xC unless otherwise noted Parameter Ratings Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 1.0 A TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Ta = 25C unless otherwise noted Max. Parameter Units PN2222A *MMBT2222A **PZT2222A 350 2.8 1,000 8.0 PD Total Device Dissipation Derate above 25C 625 5.0 RJC Thermal Resistance, Junction to Case 83.3 RJA Thermal Resistance, Junction to Ambient 200 mW mW/C C/W 357 125 C/W * Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06". ** Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6cm2. (c) 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 www.fairchildsemi.com 1 PN2222A/MMBT2222A/PZT2222A -- NPN General Purpose Amplifier February 2009 Symbol Ta = 25C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 40 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 75 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 6.0 V ICEX Collector Cutoff Current VCE = 60V, VEB(off) = 3.0V ICBO Collector Cutoff Current VCB = 60V, IE = 0 VCB = 60V, IE = 0, Ta = 125C IEBO Emitter Cutoff Current IBL Base Cutoff Current 10 nA 0.01 10 A A VEB = 3.0V, IC = 0 10 nA VCE = 60V, VEB(off) = 3.0V 20 nA On Characteristics hFE DC Current Gain IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 10mA, VCE = 10V, Ta = -55C IC = 150mA, VCE = 10V * IC = 150mA, VCE = 10V * IC = 500mA, VCE = 10V * 35 50 75 35 100 50 40 VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V VBE(sat) Base-Emitter Saturation Voltage * IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V 0.6 300 300 0.3 1.0 V V 1.2 2.0 V V Small Signal Characteristics fT Current Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8.0 pF Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 25 pF rb'Cc Collector Base Time Constant IC = 20mA, VCB = 20V, f = 31.8MHz 150 pS NF Noise Figure IC = 100A, VCE = 10V, RS = 1.0K, f = 1.0KHz 4.0 dB Re(hie) Real Part of Common-Emitter High Frequency Input Impedance IC = 20mA, VCE = 20V, f = 300MHz 60 VCC = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA 10 ns 25 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 225 ns 60 ns MHz Switching Characteristics td Delay Time tr Rise Time ts Storage Time tf Fall Time * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c) 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 www.fairchildsemi.com 2 PN2222A/MMBT2222A/PZT2222A -- NPN General Purpose Amplifier Electrical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 125 C 300 200 25 C 100 - 40 C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 25 C 0.1 = 10 - 40 C 25C 125 C 0.6 0.4 1 10 100 I ICC - COLLECTOR CURRENT (m A) 1 500 1 VCE = 5V 0.8 25 C 0.6 125 C 0.4 0.2 0.1 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 1 10 I ICC - COLLECTOR CURRENT (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 500 CB - 40 C Figure 4. Base-Emitter On Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature V 500 Base-Emitter ON Voltage vs Collector Current Figure 3. Base-Emitter Saturation Voltage vs Collector Current 100 10 100 I C - COLLECTOR CURRENT (mA) Figure 2. Collector-Emitter Saturation Voltage vs Collector Current Base-Emitter Saturation Voltage vs Collector Current 0.8 - 40C V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT- BASE-EMITTER VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current 1 125C 0.2 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (C) 150 0.1 100 Figure 6. Emitter Transition and Output Capacitance vs Reverse Bias Voltage Figure 5. Collector Cutoff Current vs Ambient Temperature (c) 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 1 10 REVERSE BIAS VOLTAGE (V) www.fairchildsemi.com 3 PN2222A/MMBT2222A/PZT2222A -- NPN General Purpose Amplifier Typical Characteristics Switching Times vs Collector Current Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = 400 Ic V cc = 25 V TIME (nS) TIME (nS) V cc = 25 V 240 160 240 ts 160 tr t off tf 80 80 t on 0 10 td 100 I CIC - COLLECTOR CURRENT (mA) 0 10 1000 Figure 1. Turn On and Turn Off Times vs Collector Current CHAR. RELATIVE TO VALUES AT I C= 10mA PD - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 2 h re CHAR. RELATIVE TO VALUES AT VCE= 10V Common Emitter Characteristics V CE = 10 V I C = 10 mA h ie h fe 1.6 h oe 1.2 0.8 0.4 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 Figure 5. Common Emitter Characteristics Common Emitter Characteristics 8 V CE = 10 V T A = 25oC 6 h oe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 Common Emitter Characteristics 1.3 I C = 10 mA T A = 25oC 1.25 h fe 1.2 1.15 h ie 1.1 1.05 1 h re 0.95 0.9 0.85 h oe 0.8 0.75 0 5 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 Figure 6. Common Emitter Characteristics (c) 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 1000 Figure 4. Common Emitter Characteristics Figure 3. Power Dissipation vs Ambient Temperature 2.4 100 I CIC - COLLECTOR CURRENT (mA) Figure 2. Switching Times vs Collector Current Power Dissipation vs Ambient Temperature CHAR. RELATIVE TO VALUES AT TA = 25oC 10 320 320 0 Ic I B1 = I B2 = 10 www.fairchildsemi.com 4 PN2222A/MMBT2222A/PZT2222A -- NPN General Purpose Amplifier Typical Characteristics The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 (c) 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 www.fairchildsemi.com 5 PN2222A/MMBT2222A/PZT2222A NPN General Purpose Amplifier TRADEMARKS