BB 639C
Semiconductor Group Apr-30-19981
Silicon Variable Capacitance Diode
• For tuning of extended frequency band
in VHF TV / VTR tuners
Type Marking Ordering Code Pin Configuration Package
BB 639C yellow S Q62702-B695 1 = C 2 = A SOD-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R30 V
Peak reverse voltage (
R
≥ 5kΩ)
V
RM 35
Forward current
I
F20 mA
Operating temperature range
T
op -55 ...+125 °C
Storage temperature
T
stg -55 ...+150
BB 639C
Semiconductor Group Apr-30-19982
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R = 30 V
I
R- - 10 nA
Reverse current
V
R = 30 V,
T
A = 85 °C
I
R- - 200
AC characteristics pF
C
T
Diode capacitance
V
R = 1 V,
f
= 1 MHz
V
R = 2 V,
f
= 1 MHz
V
R = 25 V,
f
= 1 MHz
V
R = 28 V,
f
= 1 MHz
39
30.2
2.72
2.55
42
33.2
3.05
2.8
36
27
2.5
2.4
-
C
T2/
C
T25 9.5Capacitance ratio
V
R = 2 V,
V
R = 25 V,
f
= 1 MHz 11.1 -
Capacitance ratio
V
R = 1 V,
V
R = 28 V,
f
= 1 MHz 15.3 -13.5
C
T1/
C
T28
- 2.5∆
C
T/
C
T-Capacitance matching
V
R = 1 V,
V
R = 28 V,
f
= 1 MHz %
Series resistance
V
R = 5 V,
f
= 470 MHz
r
s- 0.6 0.75 Ω
Series inductance
L
s- 1.8 - nH
1) In-line matching. For details please refer to Application Note 047
BB 639C
Semiconductor Group Apr-30-19983
Diode capacitance
C
T
= f
(
V
R)
f
= 1MHz
0 5 10 15 20 V30
V
R
0
5
10
15
20
25
30
pF
40
C
T
Temperature coefficient of the diode
capacitance
T
Cc =
f
(
V
R)
10 0 10 1 V
V
R
-5
10
-4
10
-3
10
1/°C
T
Cc
Reverse current
I
R =
f
(
T
A)
V
R = 28V
-30 -10 10 30 50 70 °C 100
T
A
0
10
1
10
2
10
3
10
pA
I
R
Reverse current
I
R =
f
(
V
R)
T
A = Parameter
10 0 10 1 V
V
R
-1
10
0
10
1
10
2
10
3
10
pA
I
R
25°C
85°C
