BB 639C Silicon Variable Capacitance Diode * For tuning of extended frequency band in VHF TV / VTR tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1=C 2=A SOD-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage (R 5k) VRM 35 Forward current IF 20 mA Operating temperature range T op -55 ...+125 C Storage temperature T stg -55 ...+150 Semiconductor Group 1 Value Unit V Apr-30-1998 BB 639C Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 200 DC characteristics Reverse current nA VR = 30 V Reverse current VR = 30 V, TA = 85 C AC characteristics CT Diode capacitance pF VR = 1 V, f = 1 MHz 36 39 42 VR = 2 V, f = 1 MHz 27 30.2 33.2 VR = 25 V, f = 1 MHz 2.5 2.72 3.05 VR = 28 V, f = 1 MHz 2.4 2.55 2.8 9.5 11.1 - 15.3 - CT2/C T25 Capacitance ratio - VR = 2 V, VR = 25 V, f = 1 MHz CT1/C T28 13.5 Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching CT/CT - - 2.5 % rs - 0.6 0.75 Ls - 1.8 - nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group 2 Apr-30-1998 BB 639C Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 40 pF 1/C CT T Cc 30 25 10 -4 20 15 10 5 0 0 5 10 15 V 20 10 -5 0 10 30 10 1 V VR VR Reverse current I R = f (VR) Reverse current IR = f (TA) T A = Parameter VR = 28V 10 3 10 3 85C pA pA IR 10 2 IR 10 2 25C 10 1 10 1 10 0 10 -1 0 10 10 1 10 0 -30 V VR Semiconductor Group -10 10 30 50 70 C 100 TA 3 Apr-30-1998