Philips Semiconductors Product Specification
PowerMOS transistor BUK455-200A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK455 -200A -200B
The device is intended for use in VDS Drain-source voltage 200 200 V
Switched Mode Power Supplies IDDrain current (DC) 14 13 A
(SMPS), motor control, welding, Ptot Total power dissipation 125 125 W
DC/DC and AC/DC converters, and TjJunction temperature 175 175 ˚C
in automotive and general purpose RDS(ON) Drain-source on-state 0.23 0.28
switching applications. resistance;
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 200 V
VDGR Drain-gate voltage RGS = 20 k- 200 V
±VGS Gate-source voltage - - 30 V
-200A -200B
IDDrain current (DC) Tmb = 25 ˚C - 14 13 A
IDDrain current (DC) Tmb = 100 ˚C - 10 9 A
IDM Drain current (pulse peak value) Tmb = 25 ˚C - 56 52 A
Ptot Total power dissipation Tmb = 25 ˚C - 125 W
Tstg Storage temperature - - 55 175 ˚C
TjJunction Temperature - - 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 1.2 K/W
mounting base
Rth j-a Thermal resistance junction to - 60 - K/W
ambient
123
tab
d
g
s
August 1996 1 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK455-200A/B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V
voltage
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
IDSS Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
IDSS Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
IGSS Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
RDS(ON) Drain-source on-state VGS = 10 V; BUK455-200A - 0.2 0.23
resistance ID = 7 A BUK455-200B - 0.22 0.28
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfs Forward transconductance VDS = 25 V; ID = 7 A 6.0 8.4 - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1400 1750 pF
Coss Output capacitance - 190 250 pF
Crss Feedback capacitance - 55 80 pF
td on Turn-on delay time VDD = 30 V; ID = 3 A; - 18 30 ns
trTurn-on rise time VGS = 30 V; RGS = 50 ; - 35 60 ns
td off Turn-off delay time Rgen = 50 - 85 120 ns
tfTurn-off fall time - 35 50 ns
LdInternal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
LdInternal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
LsInternal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDR Continuous reverse drain - - - 14 A
current
IDRM Pulsed reverse drain current - - - 56 A
VSD Diode forward voltage IF = 14 A ; VGS = 0 V - 1.0 1.5 V
trr Reverse recovery time IF = 14 A; -dIF/dt = 100 A/µs; - 180 - ns
Qrr Reverse recovery charge VGS = 0 V; VR = 30 V - 1.8 - µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
WDSS Drain-source non-repetitive ID = 14 A ; VDD 100 V ; - - 100 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50
energy
August 1996 2 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK455-200A/B
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
10 V
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
); parameter V
GS
0 20 40 60 80 100 120 140 160 180
Tmb / C
PD% Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
Zth j-mb / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx55-lv
D =
D =
t
p
t
p
T
T
P
t
D
0 20 40 60 80 100 120 140 160 180
Tmb / C
ID% Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20
BUK455-200A
VDS / V
30
20
10
0 4
5
6
781020
ID / A VGS / V =
1 10 100 1000
VDS / V
ID / A
100
10
1
0.1
BUK455-200A,B
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
B
A
RDS(ON) = VDS/ID
0 4 8 12 16 20 24 28
BUK455-200A
ID / A
1.0
0.8
0.6
0.4
0.2
0
44.5 55.5
6
8
10
20
RDS(ON) / Ohm
VGS / V =
August 1996 3 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK455-200A/B
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 ˚C
.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 7 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0 2 4 6 8 10
BUK455-200A
VGS / V
ID / A
28
24
20
16
12
8
4
0
Tj / C = 150 25
-60 -20 20 60 100 140 180
Tj / C
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0 4 8 12 16 20 24 28
BUK455-200A
ID / A
gfs / S
15
10
5
0
0 1 2 3 4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 % 98 %
-60 -20 20 60 100 140 180
Tj / C
Normalised RDS(ON) = f(Tj)
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0 20 40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000 BUK4y5-200
August 1996 4 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK455-200A/B
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 14 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 14 A
Fig.16. Avalanche energy test circuit.
0 10 20 30
QG / nC
VGS / V
12
10
8
6
4
1
0
VDS / V =40
160
BUK455-200
20 40 60 80 100 120 140 160 180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
012
BUK455-200A
VSDS / V
IF / A
30
20
10
0
Tj / C = 150 25
L
T.U.T.
VDD
RGS R 01
VDS
-ID/100
+
-
shunt
VGS
0
WDSS =0.5 LID
2BVDSS/(BVDSS VDD)
August 1996 5 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK455-200A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x) 123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
August 1996 6 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK455-200A/B
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996 7 Rev 1.100