BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
1
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with
BDX54, BDX54A, BDX54B and BDX54C
●60 W at 25°C Case Temperature
●8 A Continuous Collector Current
●Minimum hFE of 750 at 3 V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDX53
BDX53A
BDX53B
BDX53C
VCBO
45
60
80
100
V
Collector-emitter voltage (IB = 0)
BDX53
BDX53A
BDX53B
BDX53C
VCEO
45
60
80
100
V
Emitter-base voltage VEBO 5V
Continuous collector current IC8A
Continuous base current IB0.2 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 60 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2W
Operating junction temperature range Tj-65 to +150 °C
Operating temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA-65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
2
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 100 mA IB = 0 (see Note 3)
BDX53
BDX53A
BDX53B
BDX53C
45
60
80
100
V
ICEO
Collector-emitter
cut-off current
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
IB=0
IB=0
IB=0
IB=0
BDX53
BDX53A
BDX53B
BDX53C
0.5
0.5
0.5
0.5
mA
ICBO
Collector cut-off
current
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
IE=0
IE=0
IE=0
IE=0
BDX53
BDX53A
BDX53B
BDX53C
0.2
0.2
0.2
0.2
mA
IEBO
Emitter cut-off
current VEB = 5 V IC=0 2 mA
hFE
Forward current
transfer ratio VCE = 3 V IC= 3 A (see Notes 3 and 4) 750
VBE(sat)
Base-emitter
saturation voltage IB = 12 mA IC= 3 A (see Notes 3 and 4) 2.5 V
VCE(sat)
Collector-emitter
saturation voltage IB = 12 mA IC= 3 A (see Notes 3 and 4) 2 V
VEC
Parallel diode
forward voltage IE = 3 A IB = 0 2.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 2.08 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n t i m e I C = 3 A
VBE(off) = -4.5 V
IB(on) = 12 mA
RL = 10 Ω
IB(off) = -12 mA
tp = 20 µs, dc ≤ 2%
1µs
toff Turn-off time 5µs
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
3
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
hFE - Typical DC Current Gain
40000
100
1000
10000
TCS120AG
TC = -40°C
TC = 25°C
TC = 100°C
VCE = 3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
0·5
1·0
1·5
2·0
2·5
3·0 TCS120AH
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VBE(sat) - Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0 TCS120AI
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
4
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·1
1·0
10
100 SAS120AD
DC Operation
tp = 300 µs,
d = 0.1 = 10%
BDX53
BDX53A
BDX53B
BDX53C
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS120AB
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
5
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
123
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
