2N7051 NZT7053
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Volt age 100 V
VCBO Collector-Base Volta ge 100 V
VEBO Emitter-Base Voltage 12 V
ICCollector Current - Continuo us 1.5 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
CBETO-92
Symbol Characteristic Max Units
2N7051 2N7053 *NZT7053
PDTotal Device Dissipation
Derate above 25°C625
5.0 1,000
8.0 1,000
8.0 mW
mW/°C
RθJC Thermal Resis t ance, Junct i on to Cas e 83.3 50 °C/W
RθJA Thermal Resis t ance, Junct i on to Ambient 200 125 125 °C/W
2N7053
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
BC
C
SOT-223
E
TO-226
CBE
2N7051 / 2N7053 / NZT7053
3
2N7051 / 2N7053 / NZT7053
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 100 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100
µ
A, IE = 0 100 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 mA, IC = 0 12 V
ICBO Coll ector-Cutoff Current VCB = 80 V, IE = 0 0.1
µ
A
ICES Coll ector-Cutoff Current VCE = 80 V, IE = 0 0.2
µ
A
IEBO Emi t t er-Cutoff Current VEB = 7.0 V, IC = 0 0.1
µ
A
ON CHARACTERISTICS*
hFE DC Current Gain IC = 100 mA, VCE = 5.0 V
IC = 1.0 A, VCE = 5.0 V 10,000
1,000 20,000
VCE(sat)Collector-Emitter Satura tion Voltage IC = 100 m A, IB = 0.1 mA 1.5 V
VBE(on)Base-Emitter On Volta ge IC = 100 mA, VBE = 5.0 V 2.0 V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
FTTransition Frequency IC = 100 mA, V CE = 5.0 V 200 MHz
Ccb Collector-Base Capacitanc e VCB= 10 V,f = 1. 0 MHz 2N7053 8.0 pF
hfe Sm all-Signal Current Gain VCE = 5.0 V, IC = 100 m A ,
f = 20 MHz 10 100
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collecto r Cu rrent
0.001 0.01 0.1 1
0
20
40
60
80
100
I - COLLE CTOR CURRENT (A)
h - TY PICAL PULSED CURRE NT GAIN (K)
C
FE
125 °C
25 °C
- 40°C
Collector-Emitter Saturation
Volt age vs Collect o r Cu rren t
10 100 1000
0
0.4
0.8
1.2
1.6
2
I - CO LL ECTOR CURRE N T (mA)
V - COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
β= 1000
125 °C
25 °C
- 40°C
NPN Darlington Transistor
(continued)
Typical Characteristics (continued)
Power Dissipation vs
A mb ien t Temp eratu re
0 255075100125150
0
0.25
0.5
0.75
1
TE MP E RATURE ( C)
P - P OWE R DISS I PATI ON ( W)
D
o
TO-92
SOT-2 23
TO-226
Base Emitter ON Voltage vs
Collector Current
10 100 1000
0
0.4
0.8
1.2
1.6
2
I - CO LL ECTO R CURRE NT (mA)
V - BAS E EMITTER ON V OLTAGE ( V )
C
BEON
V = 5 V
CE
125 °C
25 °C
- 40°C
Base- Emitt er Sa turati on
Vol tage vs Col lecto r Cu rren t
10 100 1000
0
0.4
0.8
1.2
1.6
2
I - COLL E CTOR CURRENT ( mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
β= 10 00
125 °C
25 °C
- 40°C
Junction Capaci tance vs
Reverse Bias Voltage
0.1 1 10 100
1
10
100
REVERSE BIA S VOLTAGE (V)
JUNC T ION CAPAC ITANCE (p F )
Ccb
C
ib
Coll ector -Cutoff Cur re nt
vs A mb ient Temp er atu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIE NT TEM P E RATURE ( C)
I - COLLECTOR CU RR ENT (nA)
A
CBO
V = 80V
CB
o
Typical Col lector-Emitter L eakage
C urrent vs T emperature
04080120160
0.1
1
10
100
1000
T - JUNCTION TE M P E RATURE ( C)
I - LE AKAG E CURRENT (nA)
J
CES
V = 8 0V
CE
V = 0
BE
o
2N7051 / 2N7053 / NZT7053
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Definition of Terms
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Advance Information
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Obsolete
This datasheet contains the design specifications for
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any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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In Design
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