RHRP15120 November 2013 Data Sheet 15 A, 1200 V, Hyperfast Diode Features * Hyperfast Recovery trr = 75 ns (@ IF = 15 A) The RHRP15120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * Max Forward Voltage, VF = 3.2 V (@ TC = 25C) * 1200 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER PACKAGE Packaging BRAND JEDEC TO-220AC RHRP15120 TO-220AC-2L RHR15120 ANODE CATHODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRP15120 UNIT Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 1200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 140oC) 1200 V 15 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20 kHz) 30 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM (Halfwave, 1 Phase, 60 Hz) 200 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 20 mJ -65 to 175 oC (c)2001 Semiconductor Components Industries, LLC. October-2017, Rev. 3 1 Publication Order Number: RHRP15120/D RHRP15120 Electrical Specifications TC = 25oC, Unless Otherwise Specified SYMBOL MIN TYP MAX IF = 15 A TEST CONDITION - - 3.2 V IF = 15 A, TC = 150oC - - 2.6 V VR = 1200 V - - 100 A VR = 1200 V, TC = 150oC - - 500 A IF = 1 A, dIF/dt = 100 A/s - - 65 ns IF = 15 A, dIF/dt = 100 A/s - - 75 ns ta IF = 15 A, dIF/dt = 100 A/s - 36 - ns tb IF = 15 A, dIF/dt = 100 A/s - 28 - ns Qrr IF = 15 A, dIF/dt = 100 A/s - 150 - nC VR = 10 V, IF = 0 A - 55 - pF 1.5 oC/W VF IR Trr CJ RJC - - UNIT DEFINITIONS VF = Instantaneous forward voltage (pw = 300 s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). Qrr = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 1000 175oC 100oC IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 100 25oC 10 175oC 100 100oC 10 1 25oC 0.1 1 0.01 0.5 0 1 2 3 4 5 VF , FORWARD VOLTAGE (V) 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE www.onsemi.com 2 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRP15120 Typical Performance Curves 75 (Continued) 150 TC = 100oC, dIF/dt = 100A/s TC = 25oC, dIF/dt = 100A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 125 60 trr 45 ta 30 15 0 0.5 tb 1 5 10 100 trr 75 ta 50 tb 25 0 0.5 15 1 IF , FORWARD CURRENT (A) IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 100A/s trr 100 ta 0 0.5 tb 1 5 15 10 15 DC 12 SQ. WAVE 9 6 3 0 100 130 115 FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT 160 FIGURE 6. CURRENT DERATING CURVE 175 CJ , JUNCTION CAPACITANCE (pF) 145 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) 150 125 100 75 50 25 0 0 15 FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT 200 50 10 IF , FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT 150 5 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE www.onsemi.com 3 175 RHRP15120 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS www.onsemi.com 4 t ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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