GlobalOptoisolator " ! ! (250 Volts Peak) The MOC3010 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are designed for applications requiring isolated triac triggering, low-current isolated ac switching, high electrical isolation (to 7500 Vac peak), high detector standoff voltage, small size, and low cost. * To order devices that are tested and marked per VDE 0884 requirements, the suffix "V" must be included at end of part number. VDE 0884 is a test option. 6 Recommended for 115 Vac(rms) Applications: * Solenoid/Valve Controls 1 STANDARD THRU HOLE * Lamp Ballasts * Interfacing Microprocessors to 115 Vac Peripherals * Motor Controls COUPLER SCHEMATIC * Static ac Power Switch * Solid State Relays 1 6 2 5 3 4 * Incandescent Lamp Dimmers MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value Unit VR 3 Volts INFRARED EMITTING DIODE Reverse Voltage Forward Current -- Continuous IF 60 mA Total Power Dissipation @ TA = 25C Negligible Power in Transistor Derate above 25C PD 100 mW 1.33 mW/C OUTPUT DRIVER Off-State Output Terminal Voltage VDRM 250 Volts Peak Repetitive Surge Current (PW = 1 ms, 120 pps) ITSM 1 A PD 300 4 mW mW/C VISO 7500 Vac(pk) PD 330 4.4 mW mW/C Junction Temperature Range TJ - 40 to +100 C Ambient Operating Temperature Range TA - 40 to +85 C Storage Temperature Range Tstg - 40 to +150 C Soldering Temperature (10 s) TL 260 C Total Power Dissipation @ TA = 25C Derate above 25C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 Second Duration) Total Power Dissipation @ TA = 25C Derate above 25C 1. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 1. 2. 3. 4. 5. ANODE CATHODE NC MAIN TERMINAL SUBSTRATE DO NOT CONNECT 6. MAIN TERMINAL MOC3010, MOC3011, MOC3012 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage Current (VR = 3 V) IR -- 0.05 100 A Forward Voltage (IF = 10 mA) VF -- 1.15 1.5 Volts Peak Blocking Current, Either Direction (Rated VDRM(1)) IDRM -- 10 100 nA Peak On-State Voltage, Either Direction (ITM = 100 mA Peak) VTM -- 1.8 3 Volts Critical Rate of Rise of Off-State Voltage (Figure 7, Note 2) dv/dt -- 10 -- V/s -- -- -- 8 5 3 15 10 5 -- 100 -- INPUT LED OUTPUT DETECTOR (IF = 0 unless otherwise noted) COUPLED LED Trigger Current, Current Required to Latch Output (Main Terminal Voltage = 3 V(3)) MOC3010 MOC3011 MOC3012 IFT Holding Current, Either Direction IH 1. 2. 3. 3. mA A Test voltage must be applied within dv/dt rating. This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (15 mA for MOC3010, 10 mA for MOC3011, 5 mA for MOC3012) and absolute max IF (60 mA). TYPICAL ELECTRICAL CHARACTERISTICS TA = 25C +800 ITM , ON-STATE CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) 2 1.8 PULSE ONLY PULSE OR DC 1.6 1.4 TA = -40C 25C 1.2 85C 1 1 10 100 IF, LED FORWARD CURRENT (mA) +400 0 -400 -800 1000 Figure 1. LED Forward Voltage versus Forward Current -3 -2 -1 0 1 2 VTM, ON-STATE VOLTAGE (VOLTS) Figure 2. On-State Characteristics 3 MOC3010, MOC3011, MOC3012 IFT, NORMALIZED LED TRIGGER CURRENT 1.5 NORMALIZED IFT 1.3 1.1 0.9 0.7 0.5 -40 -20 0 20 40 60 TA, AMBIENT TEMPERATURE (C) 80 100 Figure 3. Trigger Current versus Temperature 25 NORMALIZED TO: PWin 100 s q 20 15 10 5 0 1 2 5 10 20 PWin, LED TRIGGER WIDTH (s) 50 100 Figure 4. LED Current Required to Trigger versus LED Pulse Width 12 STATIC dv/dt CIRCUIT IN FIGURE 6 dv/dt, STATIC (V/s) 10 8 6 4 2 0 25 30 40 50 60 70 80 TA, AMBIENT TEMPERATURE (C) 90 100 Figure 5. dv/dt versus Temperature +250 Vdc PULSE INPUT APPLIED VOLTAGE WAVEFORM RTEST 1. The mercury wetted relay provides a high speed repeated pulse to the D.U.T. 2. 100x scope probes are used, to allow high speeds and voltages. 3. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable RTEST allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. tRC is measured at this point and recorded. R = 10 k CTEST MERCURY WETTED RELAY D.U.T. X100 SCOPE PROBE Vmax = 250 V 158 V + 0.63 RCVmax + 158 RC dv dt 0 VOLTS t tRC Figure 6. Static dv/dt Test Circuit t MOC3010, MOC3011, MOC3012 TYPICAL APPLICATION CIRCUITS NOTE: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. Additional information on the use of the MOC3010/3011/3012 is available in Application Note AN-780A. ZL RL VCC Rin 1 2 6 MOC3010 MOC3011 MOC3012 VCC Rin 180 1 120 V 60 Hz 2 4 6 MOC3010 MOC3011 MOC3012 0.1 F 2.4 k C1 4 Figure 8. Inductive Load with Sensitive Gate Triac (IGT 15 mA) p Figure 7. Resistive Load ZL VCC Rin 180 1 2 180 6 MOC3010 MOC3011 MOC3012 0.2 F 1.2 k 120 V 60 Hz C1 4 Figure 9. Inductive Load with Non-Sensitive Gate Triac (15 mA IGT 50 mA) t t 120 V 60 Hz MOC3010, MOC3011, MOC3012 PACKAGE DIMENSIONS -A- 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4 -B- 1 3 F 4 PL C N -T- L K SEATING PLANE J 6 PL 0.13 (0.005) G M E 6 PL D 6 PL 0.13 (0.005) M T A B M M T B M A M DIM A B C D E F G J K L M N M INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 STYLE 6: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 ANODE CATHODE NC MAIN TERMINAL SUBSTRATE MAIN TERMINAL THRU HOLE -A- 6 4 -B- 1 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 F 4 PL L H C -T- G J K 6 PL E 6 PL 0.13 (0.005) D 6 PL 0.13 (0.005) M T A M B M SEATING PLANE T B M A M M SURFACE MOUNT DIM A B C D E F G H J K L S INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 MOC3010, MOC3011, MOC3012 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. -A- 6 4 -B- 1 3 L N F 4 PL C -T- SEATING PLANE G J K D 6 PL E 6 PL 0.13 (0.005) M T A M B M 0.4" LEAD PACING DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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