Micr6sem er Eee nee lg = 140 Commerce Drive Montgomeryville, PA 1893 Tel: (215) 631-9840 2N3375 2N3632/2N3733 RF & MICROWAVE TRANSISTORS a FREQUENCY 130 TO 400MHz a VOLTAGE 28V a POWER OUT 2.5 TO 13.5W a HIGH POWER GAIN a HIGH EFFICIENCY a CLASS C TRANSISTORS a COMMON EMITTER DESCRIPTION This line of silicon epitaxial NPN planar high fre- quency transistors employs a multi emitter electrode design. This feature together with a heavily ditftused base matrix located between the individual emitters rasults in high RF current handling capability. high power gain, low base resistance and low output ca- pacitance. These transistors are intended for Class A, B, or C amplifier, oscillator ar frequency multiplier circuits and are specifically desiqned far operation in the VHF-UHF region. Device 2N3375 2N3632 2N3733 March 1989 Package TO 60 TO 60 TO 60 VHF-UHF CLASS C WIDE BAND TO 60 (M137) ORDER CODE BRANDING $D1050 2N3375 SD1070 2N3632 SD1075 2N3733 PIN CONNECTION S8B2NI375-01 1 amitter 3 collector 2 base 1/5 252N3375/2N3632/2N3733 ABSOLUTE MAXIMUM RATINGS (Tas. = 25C) Symbol Parameter 2N3375 2N3632 2N3733 Unit | Veopo | Collector to Base Voltage 65 65 65 v Veeco | Collector to Emitter Voltage 40 40 40 Vv Veso | Emitter to Base Voltage 40 4.0 4.0 Vv Ic max) | Continuous Collector Current 15 3.0 3.0 A Pp | Total Dissipation at 25C Stud 11.6 23.0 23.0 v Tj Junction Temperature | 200 200 200 C Tatg_| Storage Temperature | - 65 to 150 - 65 to 150 65 to 150 GC . 2N3375 2N3632 2N3733_ | | Ring-c) | Junetion-case Thermal Resistance 15.0 76 7.6 "C ELECTRICAL CHARACTERISTICS (Toasa = 25C) STATIC [ | 2N9375 2N3632 2N3733 Symbol) Teateonsiians Min. Typ. |Max. Min. | Typ. |Max.| Min, | Typ. | Max. Mnitt BVcgo | Ic = 0.5mA Vee =0 65 65 65 | vo BYceo| Ic = 200MA Ip =0 40 40 40 vO BVeso | le =0.25mA Ip =0 4 Vle=O.1mA} 4 4 Vl lceo Veo =30V le =0 04 0.25 0.25 mA Hee | Voce = 5 Io = 250mA 10 5 |{le= 10 | 1A) DYNAMIC 2N3975 2N96492 2N3733 Symbot Test conetions Min. |Typ. Max.|Min.|Typ.|Max.|Min.|Typ.[Max.| Tt Po F =175MHz Vee =2BV 13.5 Ww Class C Po F = 400MHz Veo =28V a 10 Ww Gp | F = 175MHz Vee =28V 5.8 dB Gp | F = 400MHz Voc = 28V 48 4.0 dB no | F = 175MHz Veo =28V 70 %s Nc | F = 400MHz Vou =28V 40 45 % Cop | F =1MHz Vop =30V 10 20 20 pF 2/5 262N3375/2N3632/2N3733 APPLICATION INFORMATION (typical curves) 2N3375 POWER OUTPUT VS FREQUENCY COLLECTOR-TO-EMITTER VOLTS Wee) 28 CASE TEMPERATURE (TQ) = 275 o = T / HH LLL! AF POWER OUTPUT (Pay I-WATTS cd O.75 | RF POWER INPUT (P),)) WATTS = 0.5 ] AF FOWER OUTPUT (Poy 7I-WATTS 10o 200 300 400 FREQUENCY MHz S8e2Nag75-02 2N3733 POWER OUTPUT VS FREQUENCY Ww ela -4-- e ILLECTOR-1G-E MIT TER VOLTS [Vog} s CASE TEMPERATURE {T) = 25C Laz _ 5 4 oe = 10 KE z 9 5 ae 2 : a, POWER INPUT (PF IW = 5 7r a a 6 200 100 400 506 $00 FREQUENCY MHz SB82NI 049-05" 2N3632 POWER OUTPUT VS FREQUENCY 2.0 | 25 2.0 1.0 7 Lis AF COVFER INBLET: {P py) WATTS = G5 COLLECTOR-TO-EMITTER VOLTS (Voce) = 28 CASE TEMPERATURE (T,)} = 25C 50 460 8o 100 200 300 FREQUENCY MHz SB82N3632-04 a/5 272N3375/2N3632/2N3733 TEST CIRCUITS 2N3375 (400 MHz OPERATION} Vee Po P = : stue Pout TUNER Z, =50 OHMS Pin Z,on0 OHMS SA82N3975-02 2N3632 (175MHz OPERATION) Pin 2 G=50 OHMS : Pour 2u 780 OHMS Vo =28 $892N9632-02 2N3632 Gi, Ge, Cs, Ga: 7 100pF Cs: 100pF 4 Ge: 0.01F, dise ceramic Li: 1.5 turns No. 16 wire, 3.46" 1D, 5/16" lang Le; Ferrite choke, Z = 450 Ls: 1 turn No. 16 wire, 1/4" ID, 3/8" long La: 2 turns No. 16 wire, 1/4" 1D, 1/4" long 2N3733(400MHz OPERATION) stun TUNER B q 2, =m ov1Ms Pp Zgsno Onn # Sy a Cy.Cg: 7.8-17 pt Ay: 0.56 ohm $a82N3793-02 4/5 282N3375/2N3632/2N3733 PACKAGE MECHANICAL DATA TO 60 = _ G I 3 PINS K 4 4 DB c 4 1 B t. i : E Si} NO. 10 - 32 UNF - 2A rt | SBAPNIS7S-05, | Minimum | Maximum Minimum Maximum Inches Inches i ; Inches Inches A 320 ; 40 F O78 B 110 135 G 420 440 _ | 245 -300 H .190 .210 D 400 450 | 095 105 E 420 455 J .030 048 = 140 160 K 140 - 160 29