MIFSMAT ONS, RECTED International HEXFET Power MOSFETs Ta@R Rectifier Recommended Equivalent HEX = Part . . Source Bonding Wire Device Size Number Vbs Rps(on) Die Outline Figure ify am Type HEXSense Die N-Channel 2 IRCCO24 60 0.1 D44 10 0.25 IRCZ24 3 IRCC034 60 0.05 D45 18 0.38 IRCZ34 3 IRCCI30 100 0.16 D46 10 0.25 IRCS30 3 IRCC230 200 04 D46 8 0.2 IRC630 3 IRCC234 250 0.45 D46 8 0.2 IRC634 3 IRCC330 400 1 D46 8 0.2 IRC730 3 IRCC430 500 15 D6 8 0.2 IRC830 4 IRCCO44 60 0.028 D47 20 0.2 IRCZ44 4 IRCC140 100 0.077 D4g 15 0.51 IRC340 4 IRCC240 200 0.18 D48 15 0.38 IRC640 4 IRCC244 250 0.28 D48 is 0.38 IRC644 4 IRCC340 400 0.55 D4g 12 03 IRC740 4 IRCC440 500 0.85 D48 i2 03 IRC&40 5 IRCCOS4 60 0.014 p49 28 0.64 IRCPOS4 Common Characteristics: IDSS @ VDS 250uA 500nA VGSith) Standard aate: min 2V. max 4V with VDS=VGS, iD=250uA VGSith) Loaic level: min 1V. max 2V with VDS=VGS. [D=250uA RADS(on) Standard gate: measured @ VGS=10V Logic level: measured @ VGS=5V www.irf.com E-52