7MBR100SD060 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 600V / 100A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Converter Thyristor Brake Inverter Item Symbol Collector-Emitter voltage Gate-Emitter voltage Condition VCES Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Continuous 1ms o c e r t Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque 600 20 100 200 100 400 600 20 50 100 200 600 800 800 100 1050 125 800 100 700 2450 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 ew n for 1 device Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=125C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. http://store.iiic.cc/ Unit n. g i s de nd e mm Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) No VGES IC ICP -IC PC VCES VGES IC ICP PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso Rating V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m 7MBR100SD060 IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 250 200 5.5 7.8 8.5 1.8 2.15 2.6 10000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr toff tf VF Turn-off Brake Forward on voltage Thyristor Converter Symbol Condition Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage ton tr toff tf IRRM IDM IRRM IGT V GT V TM Forward on voltage V FM Turn-off time Thermistor B VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=100mA VGE=15V, Ic=100A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=100A VGE=15V RG=24 IF=100A chip terminal IF=100A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=15V RG=51 V R=600V V DM=800V V RM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=100A chip terminal IF=100A chip terminal V R=800V T=25C T=100C T=25/50C for nd e mm B value t No 1.8 2.05 0.45 0.25 0.40 0.05 de IRRM R Reverse current Resistance 0.45 0.25 0.40 0.05 1.6 1.95 o c e r w ne 465 3305 1.2 0.6 1.0 0.35 5000 495 3375 pF s V 2.7 300 250 200 2.6 1.2 0.6 1.0 0.35 250 1.0 1.0 100 2.5 1.15 . n sig 1.0 1.15 1.1 1.2 A nA V V ns A nA V s A mA mA mA V V V 1.5 250 520 3450 A K Thermal resistance Characteristics Item Thermal resistance ( 1 device ) Contact thermal resistance * Min. Rth(j-c) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ Characteristics Typ. Max. Unit 0.31 0.70 0.63 0.35 0.47 0.05 C/W 7MBR100SD060 IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 250 VGE= 20V 15V 250 12V VGE= 20V 150 100 50 10V 150 100 10V 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) 250 10 Tj= 125C 150 Collector - Emitter voltage : VCE [ V ] 8 n sig ew n for 100 50 0 0 1 2 mm o c e r 3 t 4 d en Ic=100A Ic= 50A 0 4 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Cies 5000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25C 500 Collector - Emitter voltage : VCE [ V ] 10000 Ic=200A 2 Collector - Emitter voltage : VCE [ V ] No . de 6 25 400 20 300 15 200 10 100 5 Coes Cres 0 500 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 100 200 300 400 Gate charge : Qg [ nC ] http://store.iiic.cc/ 500 0 600 Gate - Emitter voltage : VGE [ V ] Tj= 25C 200 Capacitance : Cies, Coes, Cres [ pF ] 12V 50 0 50000 15V 200 Collector current : Ic [ A ] Collector current : Ic [ A ] 200 Collector current : Ic [ A ] [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) 7MBR100SD060 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24 , Tj= 25C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg= 24 , Tj= 125C 1000 ton ton toff toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 tr 100 tf tr 100 10 tf 10 0 50 100 150 200 0 50 100 150 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 25C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24 5000 10 1000 100 Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff tr Eon(125C) 8 Eoff(125C) de 6 n r o f tf e m m ew 4 nd 10 10 o c e r 100 2 . n sig Eon(25C) Eoff(25C) Err(125C) Err(25C) 0 300 0 50 100 150 200 Gate resistance : Rg [ ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 125C [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=24 ,Tj<=125C t No 1200 20 Eon 1000 15 Collector current : Ic [ A ] Switching time : ton, tr, toff, tf [ nsec ] ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] 200 10 Eoff 800 600 SCSOA (non-repetitive pulse) 400 5 200 RBSOA (Repetitive pulse) Err 0 0 10 100 300 0 Gate resistance : Rg [ W ] 200 400 600 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 800 IGBT Module 7MBR100SD060 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=24 [ Inverter ] Forward current vs. Forward on voltage (typ.) 300 250 Tj=125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 200 Tj=25C 150 100 50 0 trr(125C) Irr(125C) trr(25C) Irr(25C) 10 5 0 1 2 3 0 50 100 150 200 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) [ Thyristor ] On-state current vs. On-state voltage (typ.) 300 250 Tj= 25C Instantaneous on-state current [ A ] 150 100 50 0.4 0.8 mm t No 1.2 de 10 d en eco r . n sig ew n for 100 0 0.0 Tjw= 25C Tjw= 125C Tj= 125C 200 Forward current : IF [ A ] 100 1.6 5 2 0.0 2.0 0.4 Forward on voltage : VFM [ V ] 0.8 1.2 1.6 2.0 Instantaneous on-state voltage [ V ] [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 5 1 FWD[Inverter] IGBT[Brake] Conv. Diode Thyristor Resistance : R [ k ] Thermal resistanse : Rth(j-c) [ C/W ] 100 IGBT[Inverter] 0.1 0.01 0.001 0.01 0.1 1 10 1 0.1 -60 Pulse width : Pw [ sec ] -40 -20 0 20 40 60 80 100 Temperature [ C ] http://store.iiic.cc/ 120 140 160 180 7MBR100SD060 IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 120 VGE= 20V 15V 120 VGE= 20V 12V 15V 12V 100 Collector current : Ic [ A ] Collector current : Ic [ A ] 100 80 60 40 10V 20 80 60 40 10V 20 0 0 0 120 1 2 3 4 5 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 25C 10 Tj= 125C 80 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 100 8 n sig ew n for 60 40 20 0 0 1 2 mm 4 d en o c e r 3 t . de 6 Ic=100A 2 Ic= 50A Ic= 25A 0 4 5 10 15 20 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C No 20000 25 500 25 400 20 300 15 200 10 100 5 Cies 1000 Coes Cres 0 100 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 150 200 Gate charge : Qg [ nC ] http://store.iiic.cc/ 250 0 300 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 10000 IGBT Module 7MBR100SD060 Outline Drawings, mm . de Marking : White ew n for n sig nd e mm Marking : White t No o c e r Equivalent Circuit Schematic [ Converter ] [ Thyristor ] 21 (P) 26 [ Brake ] [ Inverter ] [ Thermistor ] 22(P1) 8 20 (Gu) 25 1(R) 2(S) 3(T) 19(Eu) 7(B) 14(Gb) 23(N) 18 (Gv ) 16 (Gw) 17(Ev ) 4(U) 15(Ew) 5(V) 13(Gx) 24(N1) 12(Gy ) 6(W) 11(Gz) 10(En) http://store.iiic.cc/ 9