SAC5.0 thru SAC75 Transient Voltage Suppressor Breakdown Voltage 5.0 to 75 Volts Peak Pulse Power 500 Watts Features CASE: DO-204AL (DO-41) Breakdown Voltages (VBR) from 5.0 to 75V 500W peak pulse power capability with a 10/1000s waveform, repetitive rate (duty cycle):0.01% Low incremental surge resistance Fast Response Time Excellent clamping capability High temperature soldering guaranteed: 265 /10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3kg) tension Application Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICS, MOSFE, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication Mechanical Data Dimensions in inches and (millimeters) Case: Void-free transfer molded thermosetting epoxy body meeting UL94V-O Terminals: Tin-Lead or ROHS Compliant annealed matte-Tin plating readily solderable per MIL-STD-750, Method 2026 Marking: Part number and cathode band Polarity: Cathode indicated by band Weight: 0.3gApproximately Maximum Ratings and Electrical Characteristics @ Symbol Value Unit 500 W SEE TABLE1 A Steady state power dissipation at TL=75 ,Lead lengths 0.375"(10mm) 2.5 W Maximum instantaneous forward voltage at 30A 3.5 V -65 to +150 Conditions PPPM Peak pulse power capability with a 10/1000s IPPM Peak pulse current with a 10/1000s PM(AV) VF TJ, TSTG 25OC unless otherwise specified Operating and Storage Temperature Document Number: SAC5.0 thru SAC75 Feb.29, 2012 www.smsemi.com 1 SAC5.0 thru SAC75 Electrical Characteristics @ 25C (Unless Otherwise Noted) TABLE1 Microsemi Part Number SAC5.0 SAC6.0 SAC7.0 SAC8.0 SAC8.5 SAC10 SAC12 SAC15 SAC18 SAC22 SAC26 SAC36 SAC45 SAC50 SAC75 Reverse Stand Off Voltage (Note1) Breakdown Voltage VBR @ IBR 1.0mA Maximum Standby current ID @ VWM Maximum Peak Pulse Current Maximum Clamping Voltage VC @ IPP=5.0A (Note2) Maximum Capacitance @ 0 Volts pF Working Inverse Blocking Voltage Inverse Blocking Leakage Current @ VWIB VWM(V) VBR(V) ID(A) IPP (A) VC(V) C (pF) VWIB(V) IIB(A) VPIB(V) 5.0 6.0 7.0 8.0 7.5 10.0 12.0 15.0 18.0 22.0 26.0 36.0 45.0 50.0 75.0 7.60 7.90 8.33 8.89 9.44 11.1 13.3 16.7 20.0 24.4 28.9 40.0 50.0 55.5 83.3 300 300 300 100 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 44.0 41.0 38.0 36.0 34.0 29.0 25.0 20.0 15.0 14.0 11.1 8.6 6.8 5.8 4.1 10.0 11.2 12.6 13.4 14.0 16.3 19.0 23.6 28.8 35.4 42.3 60.0 77.0 88.0 121.0 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 75 75 75 75 75 75 75 75 75 75 75 75 150 150 150 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 100 100 100 100 100 100 100 100 100 100 100 100 200 200 200 Peak Inverse Blocking Voltage Note1: A transient voltage suppressor is normally selected according to voltage (VWM), which should be equal to or greater than the dc or continuous peak operating voltage level. Note2: Test in TVS avalanche direction. Do not pulse in "forward" direction. See section for "Schematic Applications" herein. PPP - Peak Pulse Power (kW) 100 10 1.0 0.1 0.1 1.0 10 102 tw-Pulse Width (s) 150 Impulse Exponential Decay 1.0 IPP 0.5 IPP - Peak Pulse Current - % IPP Characteristic Curve tW IPP tW Half Sine tW=0.71p tp Square Wave tW Current Waveforms 103 104 Peak Value IPP 100 Half Value IPP 2 10/1000s Waveform as defined by R.E.A. 50 0 0 1.0 2.0 3.0 t-Time (ms) Fig.2 Pulse Waveform for Exponential Surge Fig. 1 Peak Pulse Power vs. Pulse Time Document Number: SAC5.0 thru SAC75 Feb.29, 2012 tr=10s www.smsemi.com 2 SAC5.0 thru SAC75 PPP-Peak Pulse Power or continuous Average Power in Percent of 25 (%) 100 Peak Pulse Power (Single Pulse). 75 50 Average Power 25 0 0 50 100 150 Lead or Ambient Temperature () 200 Fig.3 Derating Curve Schematic Applications The TVS low capacitance device configuration is shown in Fig.4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the sane polarity direction as the TVS as shown in Fig.5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. If using two (2) low capacitance TVS devices in also provided. The unidirectional and bidirectional configurations in Fig.5 and 6 will both in twice the capacitance of Fig.4 + TVS DIODE Fig.4 TVS with internal Low Capacitance Diode Document Number: SAC5.0 thru SAC75 Feb.29, 2012 IN Fig.5 Optional Unidirectional configuration (TVS and separate rectifier diode in parallel) OUT + Fig.6 Optional Bidirectional configuration (two TVS and devices in anti-parallel) www.smsemi.com 3