TOSHIBA TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY TLP721 Unit in mm SWITCHING POWER SUPPLY ae : The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic GG 2 DIP. 4.58 + 0.25 24) 7.62 + 0.25 @ Collector-Emitter Voltage : 55V (Min.) s Current Transfer Ratio : 50% (Min.) 1240.15](| |{ 73 psi? Rank GB : 100% (Min.) 05+01 al e z 7.85 ~ 8.80 MADE IN JAPAN | MADE IN THAILAND 2.5440.25 UL Recognized E67349 *1 | E152349 *1 BSI Approved 7364, 7365 *2 |7364, 7365 #9 9325163 *3 | 9609169 *4 11-52 SEMKO Approved | 9590142 *3 TOSHIBA _11-5B2 *1 UL1577 Weight : 0.26 *2 BS EN60065 : 1994, BS EN60950 : 1992 *3 SS EN4330784 *4 SS EN60950 @ Option (D4) type VDE Approved PIN CONFIGURATIONS MADE IN MADE IN (TOP VIEW) JAPAN THAILAND VDE Approved 74285, 91835 91868 . . . 1 4 Velteas | Operating Insulation 630, 890Vpk 890Vpk Ty -s KE Highest Permissible Over Voltage |6000, 8000Vpk |8000Vpk 2U 3 *5 VDE0884/ 06.92 1: ANODE (Note) When a VDE0884 approved type is needed, 2 : CATHODE please designate the Option (D4) 3 : EMITTER 4 : COLLECTOR 7.62mm pich 10.16mm pich TLP721 type TLP721F type @e Creepage Distance : 7.0mm (Min.) 8.0mm (Min.) Clearance : 7.0mm (Min.) 8.0mm (Min.) Internal Creepage Path : 4.0mm (Min.) 4,0mm (Min.) Insulation Thickness : 0.5mm (Min.) 0.5mm (Min.) 2001-06-01TOSHIBA TLP721 Current Transfer Ratio CURRENT TRANSFER CLASSI- RATIO (%) Ic /I TYPE FICATION (ic Tp) MARKING OF CLASSIFICATION #1 Ip=5mA, VcoR=5V, Ta=25C MIN, MAX. (None) 50 600 BLANK, Y, Y, G, G, B, B, GB 50 150 Y, Y= TLP721 Rank GR 100 300 G, G# 200 600 B, BS Rank GB 100 600 G, G, B, B, GB *1 : Ex. Rank GB : TLP721 (GB) Note : Application type name for certification test, please use standard product type name, i.e. TLP721 (GB) : TLP721 MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC STMBOL RATING UNIT Forward Current IF 60 mA a Forward Current Derating (Ta= 39C) Alp/C 0.7 mA /C = Peak Forward Current (100s pulse, 100pps) Ipp 1 A Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C 03 Collector-Emitter Voltage VCEO 55 Vv | Emitter-Collector Voltage VECO 7 Vv D Collector Current Ic 50 mA . Power Dissipation Po 150 mW | Power Dissipation Derating (Taz 25C) APC /C 1.5 mW /C | Junction Temperature Tj 125 C Storage Temperature Range Tste 55~125 C Operating Temperature Range Topr 40~100 C Lead Soldering Temperature (10s) Tsol 260 C Total Package Power Dissipation Pp 250 mW Total Package Power Dissipation Derating (Ta= 25C) AP /C 2.5 mW /C Isolation Voltage (AC, 1 min., R.H.=60%) (NOTE) BVs 4000 Vrms NOTE. Device considered a two terminal device : pins 1 and 2 shorted together, and pins 3 and 4 shorted together. 2001-06-01TOSHIBA TLP721 RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. | TYP. | MAX. | UNIT Supply Voltage Vcc 5 24 Vv Forward Current Ip 16 25 | mA Collector Current Ic 1 10 | mA Operating Temperature Topr 25 85 C INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. UNIT a Forward Voltage VE Ip=10mA 1.0 1.15 13) V fl |Reverse Current IR VR=5V 10 | vA 4 Capacitance Cp V=0, f=1MHz 30 pF Collector-Emitter Breakdown Voltage V (BR) CEO| Ic=0.5mA 55 i i Vv & | Emitter-Collector o Breakdown Voltage V (BR) ECO| Ig=0.1mA 7 - - Vv Vce=24V (Ambien waht 0.01 | 0.1 ak Below 1000 1 7 2 1 Collector Dark Current ICcKO clow 1000 tx (2) | (0) iB Vce=24V (Ambient sieht 2 50} on Ta=85C \Below 1000 Ix (4) | (50) | Capacitance a fe (Collector to Emitter) CCE V=0, f=1MHz 7 10; | PF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT = = 50 | 600 Current Transfer Ratio Ic /Ip Ip=5mA, aCe on 100 | 600 %o Ip=1mA, VcR=0.4V _ 60 Saturated CTR Ic / IF (gat) Rank GB 30) ~ % Coll E 5 I=2.4mA, Ip=8mA _ _ 0.4 tor-Emitt turati ollector-Emitter Saturation VoR (sat) | Ig=0.2mA, Ip=imA _ 02 | Vv Voltage Rank GB _ _ 0.4 2001-06-01TOSHIBA TLP721 ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Capacitance (Input to Output) Cs Vs=0, f=1MHz 0.8 pF Isolation Resistance Rg Vg=500V, R.H.= 60% 1x10!7] 1014 | QD AC, 1 minute 4000 . Vrms Isolation Voltage BVs AC, 1 second, in oil 10000; DC, 1 minute, in oil 10000; Vde SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERISTICS SYMBOL TEST CONDITION MIN, | TYP. | MAX. | UNIT Rise Time ty _ 2 Fall Time tf Voc=10V, I=2mA 3 pS Turn-on Time ton Ry, =1000 3 Turn-off Time toff 3 Turn-on Time toN 3 ; Ry =1.9k0 (Fig.1) Storage Time tg _ 40 _ us Turn-off Time tOFF Voc=5V, Ir=16mA _ 90 _ Fig.1 Switching Time Test Circuit Ry, Ip Ip p V0 VCO & yo o VCE VoE 4.5V 0.5V toN tOFF 4 2001-06-01TOSHIBA TLP721 If - Ta Pc - Ta 200 BR Z a I = 160 ic oF =} ae a ae oe 120 Be a eo ae oS oo Fe Og a mic 80 a a Q ao g 9 40 md 2 2 0 0 20 0 20 40 60 80 100 =120 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Irp DR Ip VF . 3000 100 q WIDTH <100;s 59] a= 25C ~ a= 25C 2 Bl 4 30 ey E 500 10 ia ee & 300 z 5 > 5 ez 3 2 100 5 < a = eB 1 m 50 < = 065 = 0 i S 038 z 10 0.1 3 io? 3 10? 3 10 3 10 0.6 0.8 1.0 1.2 1.4 1.6 1.8 DUTY CYCLE RATIO Dp FORWARD VOLTAGE Vp (V) AVF/ATa Ip IFp VFP -2.8 1000 < RQ 3 25 & 500 ES 2.4 a. 300 6'5 = a 20 2s a E 100 BS a fe 1.6 50 os R30 q Q oe -12 a > By = 10 ao ee EE 08 PULSE WIDTH <10ys ze fa REPETITIVE $5 oa 3 FREQUENCY =100Hz . 5 1 Ta =25C 01 0305 1 3 5 10 30 50 0.4 0.8 1.2 1.6 2.0 24 2.8 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Vp (V) 5 2001-06-01TOSHIBA TLP721 Ic - VCE Ic - VCE 7 Po (MAX) Ta = 25C ~ Ta=25C \ 50mA q 30mA 2 20mA 2 & 15mA Ee a 10mA a oO Co ma a oO So & oad oO oO & fea} wy a a) i) o Oo 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 12 COLLECTOR-EMITTER VOLTAGE VcoR (V) COLLECTOR-EMITTER VOLTAGE VoR (V) Ic IF Ic/Ip IF 100 ~ 1000 = < 30 500 ~ L Oo 4 300 & 0 e & ee & FS a 3 a & 100 > 1 fsa oO g SAMPLE B & Ta=25C = 50 8 0.3 a 5 VoE=5V 3 0.1 g Ta=25C g 0. - VoR=0.4V By Vor =5V 5 _- Vop=0.4V 0.03 2 10 CE 0.1 08 1 3 10 =30 =) 100-300 0.1 0.3 1 3 10 30 100 FORWARD CURRENT Ip (mA) FORWARD CURRENT Ip (mA) 6 2001-06-01TOSHIBA TLP721 COLLECTOR DARK CURRENT Icro (A) COLLECTOR CURRENT Ic (mA) 10 10 197? 107? 19-8 107 AMBIENT LIGHT BELOW =0 x 4 40 ICEO Ta VCE (sat) Ta 0.24 0.20 0.16 0.12 0.08 0.04 COLLECTOR-EMITTER SATURATION VOLTAGE VCE Gat) () 0 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) SWITCHING TIME Ry, 10000 Ta=25C Ip=l6mA Voc=5V 3000 1000 300 20 40 60 80 100 120 100 AMBIENT TEMPERATURE Ta (C) 30 SWITCHING TIME (us) Ic - Ta 10 Ip=25mA 1 38 5 10 30 50 100 10mA LOAD RESISTANCE Ry, (kQ) 20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) 7 2001-06-01TOSHIBA TLP721 RESTRICTIONS ON PRODUCT USE 000707EBC @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 8 2001-06-01