BC846BT - Infineon Technologies

BC846T...BC850T

1 Aug-01-2002

NPN Silicon AF Transistors



For AF input stages and driver applications



High current gain



Low collector-emitter saturation voltage



Low noise between 30 Hz and 15 kHz



Complementary types:

BC856T, BC857T,

BC858T, BC859T, BC860T

VPS05996

1

2

3

Type Marking Pin Configuration Package

BC846AT

BC846BT

BC847AT

BC847BT

BC847CT

BC848AT

BC848BT

BC848CT

BC849BT

BC849CT

BC850BT

BC850CT

1As

1Bs

1Es

1Fs

1Gs

1Js

1Ks

1Ls

2Bs

2cs

2Fs

2Gs

1 = B

2 = E

3 = C

SC75

BC846T...BC850T

2 Aug-01-2002

Maximum Ratings

Parameter Symbol BC846T BC847T

BC850T

BC848T

BC849T

Unit

Collector-emitter voltage VCEO 65 45 30 V

Collector-base voltage VCBO 80 50 30

Collector-emitter voltage VCES 80 50 30

Emitter-base voltage VEBO 6 6 5

DC collector current IC100 mA

Peak collector current ICM 200 mA

Peak base current IBM 200

Peak emitter current IEM 200

Total power dissipation, TS = 109 °C Ptot 250 mW

Junction temperature Tj150 °C

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Junction - soldering point1) RthJS



165 K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 BC846T

IC = 10 mA, IB = 0 BC847T/BC850T

IC = 10 mA, IB = 0 BC848T/BC849T

V(BR)CEO

65

45

30

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 BC846T

IC = 10 µA, IE = 0 BC847T/850T

IC = 10 µA, IE = 0 BC848T/849T

V(BR)CBO

80

50

30

-

1For calculation of RthJA please refer to Application Note Thermal Resistance

BC846T...BC850T

3 Aug-01-2002

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0 BC846T

IC = 10 µA, VBE = 0 BC847T/850T

IC = 10 µA, VBE = 0 BC848T/849T

V(BR)CES

65

50

30

-

V

Emitter-base breakdown voltage

IE = 1 µA, IC = 0 BC846T

IE = 1 µA, IC = 0 BC847T/BC850T

IE = 1 µA, IC = 0 BC848T/BC849T

V(BR)EBO

6

5

-

Collector cutoff current

VCB = 30 V, IE = 0

ICBO - - 15 nA

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO - - 5 µA

DC current gain 1)

IC = 10 µA, VCE = 5 V hFE-group A

IC = 10 µA, VCE = 5 V hFE-group B

IC = 10 µA, VCE = 5 V hFE-group C

hFE

-

140

250

480

-

DC current gain 1)

IC = 2 mA, VCE = 5 V hFE-group A

IC = 2 mA, VCE = 5 V hFE-group B

IC = 2 mA, VCE = 5 V hFE-group C

hFE

110

200

420

180

290

520

220

450

800

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

90

200

250

600

mV

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

900

-

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

580

-

660

-

700

770

1) Pulse test: t ≤=300µs, D = 2%

BC846T...BC850T

4 Aug-01-2002

Electrical Characteristicsat TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT- 250 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb - 3 - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb - 8 -

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group A

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group B

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group C

h11e

-

2.7

4.7

8.7

-

k



Open-circuit reverse voltage transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group A

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group B

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group C

h12e

-

1.5

2

3

-

10-4

Short-circuit forward current transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group A

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group B

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group C

h21e

-

200

330

600

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group A

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group B

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group C

h22e

-

18

30

60

-



S

BC846T...BC850T

5 Aug-01-2002

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Noise figure

IC = 200 µA, VCE = 5 V, RS = 2 k



,

f = 1 kHz,



f = 200 Hz BC849T

IC = 200 µA, VCE = 5 V, RS = 2 k



,

f = 1 kHz,



f = 200 Hz BC850T

F

-

1.2

1

4

dB

Equivalent noise voltage

IC = 200 µA, VCE = 5 V, RS = 2 k



,

f = 10 ... 50 Hz BC850T

Vn- - 0.135 µV

BC846T...BC850T

6 Aug-01-2002

Collector-base capacitance CCB = f (VCB

O

Emitter-base capacitance CEB = f (VEBO)

0

4

10 510 10

EHP00361

VCB0

CEB0

V

6

2

EB0

V

EB

C

8

10

pF

12

CB0

C

-1 0 1

CCB

(

)

BC 846...850

)

Total power dissipation Ptot = f (TS)

0 20 40 60 80 100 120 °C 150

TS

0

50

100

150

200

mW

300

P

tot

Transition frequency fT = f (IC)

VCE = 5V

10 10 10 10

EHP00363

f

mA

MHz

-1 0 1 2

5

T

3

10

2

1

10

5

Ι

C

Permissible Pulse Load

Ptotmax / PtotDC = f (tp)

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

0

10

1

10

2

10

3

10

Ptotmax

/ P

totDC

D=0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

BC846T...BC850T

7 Aug-01-2002

Collector cutoff current ICBO = f (TA)

VCB = 30V

10 0 50 100 150

EHP00381

TA

5

10

nA

10

Ι

CB0

5

10

4

3

2

1

0

-1

max

typ

C

Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 20

10 0

EHP00367

VCEsat

10

mA

10

Ι

C

10

2

1

0

-1

5

V

0.3 0.5

100

25

-50

0.1 0.2 0.4

C

DC current gain hFE = f (IC)

VCE = 5V

10 10 10 10

EHP00365

h

mA

-2 -1 12

FE

3

10

2

0

10

5

10

1

0

10

5

555

100

25

-50

Ι

C

Base-emitter saturation voltage

IC = f (VBEsat), hFE = 20

0

10

EHP00364

BEsat

V

0.6 V 1.2

-1

10

0

10

1

2

10

5

Ι

C

mA

0.2 0.4 0.8

C

25

C

100

C

-50

C

BC846T...BC850T

8 Aug-01-2002

h parameter he = f (VCE) normalized

IC = 2mA

00102030

EHP00369

V

CE

h

e

V

1.0

0.5

1.5

2.0

=2 mA

h

e

21

11

12

22

C

Ι

h parameter he = f (IC) normalized

VCE = 5V

10 10 10

EHP00368

mA

-1 0 1

5

e

h

2

10

-1

10

1

10

0

5

h11e

h12e

h21e

h22e

VCE = 5 V

Ι

C

Noise figure F = f (f)

IC = 0.2mA, VCE = 5V, RS = 2k



10 10 10 10

BC 846...850 EHP00371

F

kHz

dB

-2 -1 1 2

20

10

0

5

15

f

0

10

Noise figure F = f (VCE)

IC = 0.2mA, RS = 2k



, f = 1kHz

0

10 10 10 10

BC 846...850 EHP00370

VCE

F

V

10

5

15

dB

20

-1 0 1 2

5

BC846T...BC850T

9 Aug-01-2002

Noise figure F = f (IC)

VCE = 5V, f = 1kHz

10 10 10 10

BC 846...850 EHP00373

F

mA

-3 -2 0 1

20

10

0

5

15

-1

10

= 1 M

100 k

10 k

dB

500

1 k

ΩΩΩ

S

R

Ω

C

Ι

Noise figure F = f (IC)

VCE = 5V, f = 120Hz

10 10 10 10

BC 846...850 EHP00372

F

mA

-3 -2 0 1

20

10

0

5

15

-1

10

= 1 M 100 k 10 k

dB

500

1 k

ΩΩΩ

S

R

Ω

C

Ι

Noise figure F = f (IC)

VCE = 5V, f = 10kHz

10 10 10 10

BC 846...850 EHP00374

F

mA

-3 -2 0 1

20

10

0

5

15

-1

10

= 1 M

100 k

10 k

dB

500

1 k

Ω

S

R

Ω

C

Ι