BUH517
NPN Silicon
Power Transistors
Features
• High voltage, fast switching NPN power transistors.
• With TO-3PML package
• Manufactured using multiepitaxial mesa technology for cost-effective
high performance abd use a hollow emitter structure to enhance
switching speeds.
Maximum Ratings
Symbol Rating Rating Unit
VCEO
Collector-Emitter Voltage 700 V
VCBO
Collector-Base Voltage 1700 V
VEBO
Emitter-Base Voltage 10 V
ICP Peak Collector Current 12 A
IC Collector Current 8.0 A
PC Collector power dissipation 60 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=100mAdc, IB=0) 700 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=1500Vdc,IE=0) --- 0.2 mAdc
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0) --- 100 uAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=5.0Adc, VCE=5.0Vdc) 6.0 12 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=5.0Adc, IB=1.25Adc) --- 1.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=5.0Adc,IB=1.25Adc) --- 1.3 Vdc
omponents
21201 Itasca Street Chatsworth
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MCC
www.mccsemi.com
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .13 .14 3.20 3.60
B .81 .84 20.70 21.30
C .15 .17 3.80 4.20
D .10 .12 2.50 3.10
E .21 .22 5.25 5.65
F .21 .22 5.25 5.65
G .62 .64 15.80 16.20
H .19 .21 4.70 5.30
I .30 .33 7.70 8.30
J .07 .09 1.70 2.30
K .03 .05 .70 1.30
L .13 .15 3.20 3.80
M .85 .88 21.70 22.30
N .78 .82 19.90 20.90
O .21 .23 5.30 5.90
P .11 .13 2.80 3.40
Q .07 .09 1.70 2.30
R .07 .09 1.70 2.30
S .02 .03 .40 .80
TO-3PML
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