GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
C
E
S
M
Collector-emitter voltage peak value V
B
E
= 0V
-
1500 V
V
C
E
O
Collector-emitter voltage (open base)
-
600 V
I
C
Collector current (DC)
-
5A
I
C
M
Collector current peak value
-
A
P
t
o
t
Total power dissipation T
m
b
25
-
50 W
V
C
E
s
a
t
Collector-emitter saturation voltage IC = 4.0A; IB = 0.8A
-
5V
I
c
s
a
t
Collector saturation current f = 16KHz A
V
F
Diode forward voltage I
F
= 4.0A 2V
t
f
Fall time ICsat = 4.0A; f = 16KHz 1.0 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
C
E
S
M
Collector-emitter voltage peak value V
B
E
= 0V -1500 V
V
C
E
O
Collector-emitter voltage (open base) -600 V
I
C
Collector current (DC) -5A
I
C
M
Collector current peak value -A
I
B
Base current (DC) -1A
I
B
M
Base current peak value -A
P
t
o
t
Total power dissipation Tmb 25 -50 W
T
s
t
g
Storage temperature -55 150
T
j
Junction temperature -150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
I
C
E
Collector-emitter cut-off current V
B
E
= 0V; V
C
E
= V
C
E
S
M
m
a
x
-0.1 mA
I
C
E
S
VBE = 0V; VCE = VCESMmax-0.2 mA
T
j
= 125
V
C
E
O
s
u
s
t
Collector-emitter sustaining voltage I
B
= 0A; I
C
= 100mA -V
L = 25mH
V
C
E
s
a
t
Collector-emitter saturation voltages IC = 4.0A; IB =0.8A -5V
V
B
E
s
a
t
Base-emitter satuation voltage I
C
= 4.0A; I
B
= 0.8A -1.5 V
h
F
E
DC current gain I
C
= 1.0A; V
C
E
= 5V 830
V
F
Diode forward voltage IF = 4.0A 2V
f
T
Transition frequency at f = 1MHz I
C
= 0.1A; V
C
E
= 10V 1-MHz
C
c
Collector capacitance at f = 1MHz V
C
B
= 10V 165 pF
t
s
Switching times(16KHz line deflecton circuit) IC=4A,IB1=-IB2=0.8A,VCC=105V -s
t
f
Turn-off storage time Turn-off fall time IC=4A,IB1=-IB2=0.8A,VCC=105V 1.0 s
ELECTRICAL CHARACTERISTICS
TO-3
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
2SD870
SILICON DIFFUSED POWER TRANSISTOR
