FDMC7660 N-Channel PowerTrench(R) MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Applications DC - DC Buck Converters Point of Load High Efficiency Load Switch and Low Side Switching Bottom Top S D D D Pin 1 S S G D S D S D S D G D Power 33 MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25C -Continuous (Silicon limited) TC = 25C -Continuous TA = 25C PD TJ, TSTG Units V 20 V 40 100 (Note 1a) 20 (Note 3) 200 -Pulsed A 200 Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25C Power Dissipation TA = 25C 41 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to + 150 mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 53 C/W Package Marking and Ordering Information Device Marking FDMC7660 Device FDMC7660 (c)2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 Package Power 33 1 Reel Size 13'' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7660 N-Channel PowerTrench(R) MOSFET June 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 2.5 V 30 V 14 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.7 -6 mV/C VGS = 10 V, ID = 20 A 1.8 2.2 VGS = 4.5 V, ID = 18 A 2.6 3.3 VGS = 10 V, ID = 20 A, TJ = 125C 2.2 3.1 VDS = 5 V, ID = 20 A 163 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1MHz 3630 4830 pF 1345 1790 pF 110 165 pF 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 15 V, ID = 20 A, VGS = 10 V, RGEN = 6 14 25 6.8 14 ns ns 36 58 ns tf Fall Time 5.7 11 ns Qg Total Gate Charge VGS = 0 V to 10 V 54 86 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 20 A 24 38 Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge nC 11 nC 5.6 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 20 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 IF = 20 A, di/dt = 100 A/s V 45 63 ns 25 35 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. b. 125 C/W when mounted on a minimum pad of 2 oz copper a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 1 mH, IAS = 20 A, VDD = 27 V, VGS = 10 V 4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. (c)2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 2 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 3.0 200 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 10 V 150 VGS = 4.5 V VGS = 4 V 100 VGS = 3.5 V 50 VGS = 3 V 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.5 VGS = 3 V VGS = 3.5 V 2.0 VGS = 4 V 1.5 1.0 2.0 0 50 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 200 15 ID = 20 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 ID = 20 A 5 TJ = 125oC TJ = 25 oC 0 100 125 150 2 4 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 VDS = 5 V TJ = 150 oC 100 TJ = 25 oC 50 TJ = -55 oC 4 10 VGS = 0 V TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics (c)2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 200 100 0.1 0.2 0 3 8 Figure 4. On-Resistance vs Gate to Source Voltage 200 2 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 1 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 10 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 0.5 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 ID = 20 A Ciss 8 CAPACITANCE (nF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Coss 1 Crss f = 1 MHz VGS = 0 V 2 0.1 0 0 20 40 0.05 0.1 60 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 150 30 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RJC = 3 C/W TJ = 25 oC TJ = 100 oC TJ = 125 oC VGS = 10 V 100 VGS = 4.5 V 50 Limited by Package 1 0.01 0.1 1 10 0 25 100 300 50 150 1000 P(PK), PEAK TRANSIENT POWER (W) DERIVED FROM TESTED DATA 100 ID, DRAIN CURRENT (A) 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 10 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms SINGLE PULSE TJ = MAX RATED 100 ms RJA = 125 oC/W 1s 10 s TA = 25 oC DC 0.01 0.01 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area (c)2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 SINGLE PULSE RJA = 125 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 125 C/W 1E-3 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 5 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted FDMC7660 N-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout (c)2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 (c)2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 7 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2CoolTM PowerTrench(R) F-PFSTM The Power Franchise(R) (R) AccuPowerTM PowerXSTM FRFET(R) Global Power ResourceSM AX-CAPTM* Programmable Active DroopTM Green BridgeTM BitSiC(R) QFET(R) TinyBoostTM Build it NowTM QSTM Green FPSTM TinyBuckTM CorePLUSTM Quiet SeriesTM Green FPSTM e-SeriesTM TinyCalcTM CorePOWERTM RapidConfigureTM GmaxTM TinyLogic(R) CROSSVOLTTM GTOTM TM TINYOPTOTM CTLTM IntelliMAXTM TinyPowerTM Current Transfer LogicTM Saving our world, 1mW/W/kW at a timeTM ISOPLANARTM TinyPWMTM DEUXPEED(R) Marking Small Speakers Sound Louder SignalWiseTM TinyWireTM SmartMaxTM Dual CoolTM and BetterTM TranSiC(R) SMART STARTTM EcoSPARK(R) MegaBuckTM TriFault DetectTM Solutions for Your SuccessTM EfficentMaxTM MICROCOUPLERTM TRUECURRENT(R)* SPM(R) ESBCTM MicroFETTM SerDesTM STEALTHTM MicroPakTM (R) SuperFET(R) MicroPak2TM SuperSOTTM-3 MillerDriveTM Fairchild(R) UHC(R) SuperSOTTM-6 MotionMaxTM Fairchild Semiconductor(R) Ultra FRFETTM SuperSOTTM-8 Motion-SPMTM FACT Quiet SeriesTM UniFETTM SupreMOS(R) mWSaverTM FACT(R) VCXTM SyncFETTM OptoHiTTM FAST(R) VisualMaxTM Sync-LockTM OPTOLOGIC(R) FastvCoreTM VoltagePlusTM OPTOPLANAR(R) (R)* FETBenchTM XSTM FlashWriter(R) * (R) FPSTM