December 2009
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C www.fairchildsemi.com
1
FDMC7660S N-Channel Power Trench® SyncFET™
FDMC7660S
N-Channel Power Trench® SyncFET™
30 V, 20 A, 2.2 mΩ
Features
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
General Description
The FDMC7660S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest rDS(on) while maintaining excellent switching
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source V oltage (Note 4) ±20 V
ID
Drain Current -Continuous (Package limited) TC = 25 °C 40
A
-Continuous (Silicon limited) TC = 25 °C 100
-Continuous TA = 25 °C (Note 1a) 20
-Pulsed 200
EAS Single Pulse Avalanche Energy (Note 3) 128 mJ
PDPower Dissipation 41 W
Power Dissipation (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Ca se 3 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7660S FDMC7660S Power 33 13 ’’ 12 mm 3000 units
Top Bottom
DDDD
SSSG
Pin 1
4
3
2
1
5
6
7
8
G
S
S
S
D
D
D
D
Power 33
FDMC7660S N-Channel Power Trench® SyncFET™
www.fairchildsemi.com
2
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 1 mA, referenced to 25 °C 13 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 2.5 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 1 mA, referenced to 25 °C -3 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 20 A 1.7 2.2 mΩVGS = 4.5 V, ID = 18 A 2.52.95
VGS = 10 V, ID = 20 A, TJ = 125 °C 2.2 3.1
gFS Forward Transconductance VDD = 5 V, ID = 20 A 129 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1 MHz
3250 4325 pF
Coss Output Capacitance 1260 1680 pF
Crss Reverse Transfer Capacitance 105 160 pF
RgGate Resistance 0.8 Ω
Switching Characteristics
td(on) Turn-On Delay Time VDD = 15 V, ID = 20 A,
VGS = 10 V, RGEN = 6 Ω
14 25 ns
trRise Time 5 10 ns
td(off) Turn-Off Delay Time 34 54 ns
tfFall Time 3.9 10 ns
Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 15 V
ID = 20 A
47 66 nC
Total Gate Charge VGS = 0 V to 4.5 V 21 29 nC
Qgs Total Gate Charge 9.5 nC
Qgd Gate to Drain “Miller” Charge 5 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 20 A (Note 2) 0.8 1.2 V
VGS = 0 V, IS = 1.9 A (Note 2) 0.4 0.7
trr Reverse Recovery Time IF = 20 A, di/dt = 300 A/µs 31 50 ns
Qrr Reverse Recovery Charge 39 62 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad o n a 1.5 x 1.5 in. bo ard of FR-4 m ater ial. RθJC is guaranteed by de sign wh ile RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
3. Starting TJ = 25oC; N-ch: L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
a. 53°C/W when mounted on
a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a
minimum pad of 2 oz copper
FDMC7660S N-Channel Power Trench® SyncFET™
www.fairchildsemi.com
3
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0 2.5
0
50
100
150
200
V
GS
= 6 V
V
GS
= 3 V
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 3.5 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4 V
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 50 100 150 200
0
1
2
3
4
V
GS
= 3 V
V
GS
= 4 V V
GS
= 6 V
V
GS
= 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
,
DRAIN CURRENT (A)
V
GS
= 10 V
V
GS
= 3.5 V
PULSE D U R ATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 20 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J,
JUNCTIO N TEMPE RATU R E
(
oC
)
vs Junction Te mperature Figure 4.
246810
0
2
4
6
8
10
T
J
= 125
o
C
I
D
= 20 A
T
J
= 25
o
C
V
GS
,
GATE TO SOURCE VOLTAGE (V)
r
DS(on),
DRAIN TO
SOURCE ON- RESI STANCE
(
m
Ω)
PULSE DURA TION = 80
µ
s
DUTY CY C LE = 0.5% MA X
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1234
0
50
100
150
200
T
J
= 125
o
C
V
DS
= 5 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
FDMC7660S N-Channel Power Trench® SyncFET™
www.fairchildsemi.com
4
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
Figure 7.
0 1020304050
0
2
4
6
8
10
ID = 20 A
VDD = 15 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 20 V
Gate Charge Characteristics Figure 8.
0.1 1 10 30
10
100
1000
10000
f = 1 MH z
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01 0.1 1 10 100 1000
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
Uncl a mped I nduc t ive
Switching Capability Figure 10.
25 50 75 100 125 150
0
30
60
90
120
150
Limited by Package
R
θ
JC
= 3
o
C/W
V
GS
= 4.5 V
V
GS
= 10 V
ID
,
DRAIN CURRENT (A)
Tc
,
CASE TEMPERA TURE
(
o
C
)
Maximum Continuous Drain
Current vs Ambient Temperature
Figure 11.
0.01 0.1 1 10 100
0.01
0.1
1
10
100
500
100 us
DC
10 s
1 s
100 m s
10 m s
1 ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
TH IS AR E A IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MA X RATED
R
θ
JA
= 125
o
C/W
TA = 25
o
C
Forward Bias Safe
Operating Area Figure 12.
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.5
1
10
100
1000
3000
SINGLE PULSE
R
θ
JA
= 125
o
C/W
TA
= 25
o
C
P
(
PK
)
, PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC7660S N-Channel Power Trench® SyncFET™
www.fairchildsemi.com
5
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
Figure 13. Junction-to-Ambient Transient Thermal Respon se Curve
10-4 10-3 10-2 10-1 110
100 1000
0.0001
0.001
0.01
0.1
1
2
SINGLE PULSE
RθJA = 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1 PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC7660S N-Channel Power Trench® SyncFET™
www.fairchildsemi.com
6
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMC7660S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Typical Characteristics (continued)
Figure 14. FDMC7660S SyncFET body
diode reverse recovery characteristic Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
0 5 10 15 20 25 30
10-6
10-5
10-4
10-3
10-2
10-1
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
IDSS, REVERSE LEAKAGE CURRENT (A)
VDS, REVER S E VO LTAGE (V)
0 50 100 150 200
-5
0
5
10
15
20
di/dt = 300 A/µs
CURRENT (A)
TIME (n s)
FDMC7660S N-Channel Power Trench® SyncFET™
www.fairchildsemi.com
7
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
Dimensional Outline and Pad Layout
www.fairchildsemi.com
FDMC7660S N-Channel Power Trench® SyncFET™
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C 8
TRADEMARKS
The following includes regi stered and unregiste red trademarks and service mar ks, owned by Fairchild Semico nductor and/or its glob al subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical impla nt into the body or (b) support or sustain lif e,
and (c) whose failur e to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
Fairchild®
Fairchild Semiconductor ®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series ™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART STAR T™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet cont ains the design specifications for product development. Specifications
may change in any manner without not ice.
Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any ti me without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiti ng of semiconductor parts is a growing problem in the in dustry. All manufacture s of semiconductor products are experi encing counterfeiting of their
parts. Customers who inadvert ently p urchase co unterf eit p arts experi ence ma ny problems su ch as lo ss of bra nd r eputat ion, substa ndard per formance, failed
application, and increased cost of prod uction and manuf actu ring de lays. Fairchild is taking strong measures to protect ourselves and our cust ome rs from the
proliferation of counterfei t parts. Fairchild strongly encourages customers to p urchase Fairchild parts either di rectly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our custo mers to do their part in stopping this practice by buying direct or from authorized distr ibutors.
Rev. I44
